Granted Patent B2

US 12,274,082 · App. 17/380,040 · Granted Apr 8, 2025

Inventors: Yi-Lun Chou (Suzhou, CN); Kye Jin Lee (Suzhou, CN); Han-Chin Chiu (Suzhou, CN); Xiuhua Pan (Suzhou, CN)

Assignee: INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.

H10D30/4732H01L23/562H10D30/475H10D62/343H10D62/357H10D62/824H10D62/8503

Abstract

Claims (25)

1. A semiconductor device, comprising:

a substrate;

a nucleation layer comprising a composition that includes a first element and disposed on and forming an interface with the substrate;

a buffer layer comprising a III-V compound which includes the first element, the buffer layer disposed on and forming an interface with the nucleation layer, wherein the buffer layer has a concentration of the first element oscillating within the buffer layer, such that the concentration of the first element varies as an oscillating function of a distance within a thickness of the buffer layer, wherein spacings among adjacent peaks of the oscillating function change from narrow to wide with respect to a first reference point within the buffer layer;

a first nitride-based semiconductor layer disposed on and forming an interface with the buffer layer, wherein the concentration of the first element within the buffer layer first oscillates with respect to the first reference point so that peaks and troughs of the concentration converge toward a positive steady value, and then the concentration drops to 0 at the interface between the buffer layer and the first nitride-based semiconductor layer;

a second nitride-based semiconductor layer disposed on the first nitride-based semiconductor layer and having a bandgap greater than a bandgap of the first nitride-based semiconductor layer, so as to form a heterojunction therebetween with a two-dimensional electron gas (2DEG) region; and

two or more source/drain (S/D) electrodes and a gate electrode disposed over the second nitride-based semiconductor layer, wherein the gate electrode is between the S/D electrodes.

2. The semiconductor device of claim 1 , wherein the change of the spacings among the adjacent peaks of the oscillating function from narrow to wide is along a direction pointing from the nucleation layer toward the first nitride-based semiconductor layer.

3. The semiconductor device of claim 1 , wherein spacings among adjacent troughs of the oscillating function change from narrow to wide with respect to the first reference point within the buffer layer.

4. The semiconductor device of claim 1 , wherein at least two of the peaks of the oscillating function correspond to the same value of the concentration of the first element.

5. The semiconductor device of claim 1 , wherein at least two of the peaks of the oscillating function correspond to values of the concentration of the first element which decrease as the spacings become narrower.

6. The semiconductor device of claim 1 , wherein at least two of troughs of the oscillating function correspond to the same value of the concentration of the first element.

7. The semiconductor device of claim 1 , wherein at least two of troughs of the oscillating function correspond to values of the concentration of the first element which increase as the spacings become narrower.

8. The semiconductor device of claim 1 , wherein the spacings among the adjacent peaks of the oscillating function includes a first spacing S 1 , a second spacing S 2 , and a third spacing S 3 in sequence with respect to the first reference point within the buffer layer, and S 1 <S 2 <S 3 .

9. The semiconductor device of claim 1 , wherein a graph of the variable concentration of the first element versus the distance within the thickness of the buffer layer has two different periodic curves.

10. The semiconductor device of claim 1 , wherein a graph of the variable concentration of the first element versus the distance within the thickness of the buffer layer has a part changing periodically.

11. The semiconductor device of claim 1 , wherein the concentration of the first element oscillates within the buffer layer, such that the concentration of the first element incrementally increases and decrementally decreases within the buffer layer with respect to the first reference point.

12. The semiconductor device of claim 11 , wherein the spacings among the adjacent peaks of the oscillating function change from narrow to wide such that frequencies of the incremental increases and decremental decreases of the oscillating function get lowered.

13. The semiconductor device of claim 1 , wherein the concentration of the first element at a beginning point of the oscillating function is greater than the concentration of the first element at an end point of the oscillating function.

14. The semiconductor device of claim 1 , wherein the oscillating function is a wave function having a plurality of waves, and wavelengths of the waves become gradually greater as the concentration of the first element oscillates within the buffer layer.

15. The semiconductor device of claim 1 , wherein the spacings among the adjacent peaks of the oscillating function change from narrow to wide and then change from wide to narrow with respect to the first reference point within the buffer layer.

16. The semiconductor device of claim 1 , wherein the buffer layer has a thickness in a range from 1 μm to about 50 μm.

17. The semiconductor device of claim 1 , wherein the first element is aluminum, and the first nitride-based semiconductor layer is devoid of aluminum.

18. The semiconductor device of claim 1 , wherein the first element is aluminum, the nucleation layer comprises aluminum nitride (AlN), the buffer layer comprises aluminum gallium nitride (AlGaN), and the first nitride-based semiconductor layer comprises gallium nitride (GaN).

19. The semiconductor device of claim 1 , wherein the buffer layer further comprises indium.

Assignments (3)

Continuity (2)

References Cited (76)