Semiconductor device and method for manufacturing the same
A semiconductor device includes a nucleation layer, a buffer layer, a first nitride-based semiconductor layer, a second nitride-based semiconductor layer, S/D electrodes, and a gate electrode. The nucleation layer includes a composition that includes a first element. The buffer layer includes a III-V compound which includes the first element. The buffer layer is disposed on and forms an interface with the nucleation layer. The buffer layer has a concentration of the first element oscillating within the buffer layer, such that the concentration of the first element varies as an oscillating function of a distance within a thickness of the buffer layer. An oscillation rate in the concentration of the first element per unit thickness of the buffer layer varies with respect to a first reference point within the buffer layer. The first and second nitride-based semiconductor layer, S/D electrodes, and a gate electrode are disposed on the buffer layer.
1. A semiconductor device, comprising:
a substrate;
a nucleation layer comprising a composition that includes a first element and disposed on and forming an interface with the substrate;
a buffer layer comprising a III-V compound which includes the first element, the buffer layer disposed on and forming an interface with the nucleation layer, wherein the buffer layer has a concentration of the first element oscillating within the buffer layer, such that the concentration of the first element varies as an oscillating function of a distance within a thickness of the buffer layer, wherein an oscillation rate in the concentration of the first element per unit thickness of the buffer layer varies with respect to a first reference point within the buffer layer, wherein the oscillating function comprises a sine wave or a cosine wave;
a first nitride-based semiconductor layer disposed on and forming an interface with the buffer layer, wherein the concentration of the first element within the buffer layer first oscillates with respect to the first reference point so that peaks of the concentration remain as a positive steady value and troughs of the concentration increase toward the positive steady value, and then the concentration drops to 0 at the interface between the buffer layer and the first nitride-based semiconductor layer;
a second nitride-based semiconductor layer disposed on the first nitride-based semiconductor layer and having a bandgap greater than a bandgap of the first nitride-based semiconductor layer, so as to form a heterojunction therebetween with a two-dimensional electron gas (2DEG) region; and
at least two source/drain (S/D) electrodes and a gate electrode disposed over the second nitride-based semiconductor layer, wherein the gate electrode is between the S/D electrodes.
2. The semiconductor device of claim 1 , wherein the oscillation rate in the concentration of the first element per unit thickness of the buffer layer increases with respect to the first reference point within the buffer layer.
3. The semiconductor device of claim 1 , wherein at least two of peaks of the oscillating function correspond to the same value of the concentration of the first element.
4. The semiconductor device of claim 1 , wherein a graph of the variable concentration of the first element versus the distance within the thickness of the buffer layer has two different periodic curves.
5. The semiconductor device of claim 1 , wherein a graph of the variable concentration of the first element versus the distance within the thickness of the buffer layer has a part changing periodically.
6. The semiconductor device of claim 1 , wherein the concentration of the first element oscillates within the buffer layer, such that the concentration of the first element incrementally increases and decrementally decreases within the buffer layer with respect to the first reference point.
7. The semiconductor device of claim 6 , wherein the oscillating function incrementally increases from a first trough to a first peak within a first thickness interval of the buffer layer, wherein the oscillating function incrementally increases from a second trough to a second peak within a second thickness interval of the buffer layer, and the first thickness interval is longer than the second thickness interval.
8. The semiconductor device of claim 1 , wherein the concentration of the first element oscillates to converge toward an end point of the oscillating function.
9. The semiconductor device of claim 1 , wherein the oscillating function is a wave function having a plurality of waves, and wavelengths of the waves gradually vary as the concentration of the first element oscillates within the buffer layer.
10. The semiconductor device of claim 1 , wherein the buffer layer has a thickness in a range from 1 μm to about 50 μm.
11. The semiconductor device of claim 1 , wherein the first element is aluminum, and the first nitride-based semiconductor layer is devoid of aluminum.
12. The semiconductor device of claim 1 , wherein the first element is aluminum, the nucleation layer comprises aluminum nitride (AlN), the buffer layer comprises aluminum gallium nitride (AlGaN), and the first nitride-based semiconductor layer comprises gallium nitride (GaN).
13. The semiconductor device of claim 1 , wherein the buffer layer further comprises indium.