Granted Patent B2

US 12,399,434 · App. 17/383,086 · Granted Aug 26, 2025

Inventors: Johannes Fitzgerald De Boer (Amstelveen, NL); Vasco Tomas Tenner (Amsterdam, NL); Arie Jeffrey Den Boef (Waalre, NL); Christos Messinis (Amsterdam, NL)

Assignee: ASML Netherlands B.V.

G03F7/70633G03F7/70625G03F7/706849

Abstract

Claims (31)

1. A metrology apparatus configured to determine a characteristic of a structure manufactured on a substrate, comprising:

an illumination branch configured to illuminate the structure with first illumination radiation to generate first scattered radiation; and

a detection branch comprising an optical system and configured to detect on a sensor a first interference pattern formed by interference between a portion of the first scattered radiation reaching the sensor and a first reference radiation, wherein:

the illumination branch is further configured to illuminate the structure with second illumination radiation, from a different direction to the first illumination radiation in a reference frame of the structure, to generate second scattered radiation,

the detection branch is further configured to detect on the sensor a second interference pattern formed by interference between a portion of the second scattered radiation reaching the sensor and a second reference radiation,

the illumination branch is further configured to direct the first reference radiation such that an azimuthal angle of the first reference radiation is oblique with respect to an azimuthal angle of the first illumination radiation to reduce a variation of contrast with position of the first interference pattern,

the apparatus further comprises a processing unit configured to use the first interference pattern and the second interference pattern to determine the characteristic of the structure, and

a first azimuthal angle of the first reference radiation onto the sensor is different with respect to a second azimuthal angle of the second reference radiation onto the sensor, in the reference frame of the structure.

2. The metrology apparatus of claim 1 , wherein the difference between the first and second azimuthal angles is 180 degrees ±30 degrees.

3. The metrology apparatus of claim 1 , wherein the difference between the first and second azimuthal angles is nominally 180 degrees in the reference frame of the structure.

4. The metrology apparatus of claim 1 , further comprising:

a beam splitter configured to split a radiation beam to generate the first illumination radiation and the first reference radiation,

wherein an optical path length between a point where the radiation beam is split and the sensor is set to be equal for each of the first illumination radiation and the first reference radiation.

5. The metrology apparatus of claim 1 , further comprising:

a beam splitter configured to split a radiation beam to generate the second illumination radiation and the second reference radiation,

wherein an optical path length between a point where the radiation beam is split and the sensor is set to be equal for each of the second illumination radiation and the second reference radiation.

6. The metrology apparatus of claim 1 , wherein the portion of the first scattered radiation reaching the sensor excludes a specular reflection component of the first scattered radiation.

7. The metrology apparatus of claim 1 , wherein the portion of the second scattered radiation reaching the sensor excludes a specular reflection component of the second scattered radiation.

8. The metrology apparatus of claim 1 , wherein the portion of the first scattered radiation reaching the sensor consists at least predominantly of one or more non-zeroth order diffraction components scattered from the structure.

9. The metrology apparatus of claim 8 , wherein the portion of the second scattered radiation reaching the sensor consists at least predominantly of one or more non-zeroth order diffraction components scattered from the structure, the one or more non-zeroth order diffraction components being opposite in sign to the one or more non-zeroth order diffraction components of the portion of the first scattered radiation reaching the sensor.

10. The metrology apparatus of claim 1 , wherein the first azimuthal angle is oblique with respect to the second azimuthal angle.

11. The metrology apparatus of claim 1 , wherein each of the first reference radiation and the second reference radiation is a plane wave or a spherical wave.

12. The metrology apparatus of claim 1 , wherein:

the portion of the first scattered radiation reaching the sensor is at least partially coherent at the sensor with the first reference radiation; and

the portion of the second scattered radiation reaching the sensor is at least partially coherent at the sensor with the second reference radiation.

13. The metrology apparatus of claim 1 , wherein the processing unit is configured to determine the characteristic of the structure based on a difference between the first interference pattern and the second interference pattern.

14. The metrology apparatus of claim 1 , wherein the processing unit is configured to determine the characteristic of the structure by calculating a complex field of radiation from each of the first interference pattern and the second interference pattern and using the calculated complex field of radiation from each of the first interference pattern and the second interference pattern to determine the characteristic of the structure.

15. The metrology apparatus of claim 1 , wherein the characteristic of the structure comprises one or more of the following:

overlay;

an error indicative of an error in focus of radiation used in a lithographic process to manufacture the structure; and

an error indicative of an error in radiation dose of radiation used in a lithographic process to manufacture the structure.

Assignments (4)

Priority Claims (1)

Continuity (2)

References Cited (38)