Membranes for use within a lithographic apparatus and a lithographic apparatus comprising such a membrane
A membrane transmissive to EUV radiation, which may be used as a pellicle or spectral filter in a lithographic apparatus. The membrane has one or more high doped regions wherein the membrane is doped with a dopant concentration greater than 10 17 cm −3 , and one or more regions with low (or no) doping. The membrane may have a main substrate having low doping and one or more additional layers, wherein the high doped regions are within some or all of the additional layers.
1. A membrane for a lithographic apparatus, the membrane comprising
a core layer of a thickness of 60 nm or less, the core layer comprising a material, substantially transparent for radiation at an EUV wavelength, selected from: (poly-)Si, Si 3 N 4 , SiC, ZrN, ZrB 2 , ZrC, MoB 2 , MoC, RuB 2 , LaB 2 , LaC, TiB 2 , TiC, (poly-)crystalline Yttrium, (poly-)crystalline Zr, Be, C, B or B 4 C, and
a cap layer for improved IR emissivity, the cap layer comprising a material which absorbs infrared (IR) radiation and having a layer thickness of 20 nm or less,
wherein combination of at least the core layer and cap layer of the membrane has IR radiation emissivity of at least 0.1 and is substantially transmissive to radiation at the EUV wavelength.
2. The membrane as claimed in claim 1 , wherein the material of the cap layer for improved IR emissivity comprises Ru, Ti, Nd, Pr, Mo, Nb, La, Zr, B, Y or Be, and wherein the cap layer is of a different material than the core layer.
3. The membrane as claimed in claim 1 , wherein the material of the cap layer for improved IR emissivity comprises B 4 C, SiNx, ZrO 2 or MoSi 2 and wherein the cap layer is of a different material than the core layer.
4. The membrane as claimed in claim 1 , wherein the material of the cap layer for improved IR emissivity is a silicide and wherein the cap layer is of a different material than the core layer.
5. The membrane as claimed in claim 1 , wherein the core layer comprises (poly-)Si and the cap layer for improved IR emissivity is a Mo or Ru layer of thickness 5 nm or less.
6. The membrane as claimed in claim 1 , wherein the cap layer for improved IR emissivity is protected with a protective cap layer, the protective cap layer comprising a material protecting against oxidation and/or etching and the material of the protective cap layer is an oxide, a carbide or nitride of at least one selected from: Zr, Ti, Hf, Si, Rh or Ru.
7. The membrane as claimed in claim 6 , wherein the protective cap layer has a thickness selected from the range of 1 to 3 nm.
8. The membrane as claimed in claim 1 , wherein the membrane is transmissive for radiation having the EUV wavelength of 13.5 nm, and wherein the core layer comprises at least one selected from: ZrB 2 , ZrC, MoB 2 , MoC, RuB 2 or SiC.
9. The membrane as claimed in claim 1 , wherein the membrane is transmissive for radiation having the EUV wavelength of 6.7 nm, and wherein the core layer comprises at least one selected from: ZrB 2 , ZrC, LaB 2 , LaC, TiB 2 , TiC, MoB 2 or MoC.
10. The membrane as claimed in claim 1 , wherein the membrane is transmissive for radiation having the EUV wavelength of 4.37 nm, and wherein the core layer comprises TiC.
11. A lithographic apparatus comprising the membrane as claimed in claim 1 .
12. The lithographic apparatus as claimed in claim 11 , wherein the membrane operates as a pellicle protecting a component from contamination.
13. A patterning device system comprising:
a patterning device capable of imparting a radiation beam with a pattern in its cross-section to form a patterned radiation beam, and
the membrane as claimed in claim 11 , wherein the membrane operates as a pellicle protecting the patterning device from contamination.
14. The lithographic apparatus as claimed in claim 12 , further comprising a projection system operable to project a patterned radiation beam onto a substrate, wherein the membrane operates as a pellicle protecting an optical component within the projection system from contamination.
15. The lithographic apparatus as claimed in claim 11 , wherein the membrane operates as a spectral filter membrane to block an unwanted wavelength of radiation.
16. The lithographic apparatus as claimed in claim 15 , wherein the spectral filter membrane is arranged under an angle in a scan direction of the lithographic apparatus, such that a radiation reflected by the membrane is not reflected back into the projection system.
17. The lithographic apparatus as claimed in claim 15 , wherein the spectral filter membrane comprises a metal layer having a thickness less than the skin depth for IR radiation and more than 5 nm.
18. The lithographic apparatus as claimed in claim 17 , wherein the spectral filter membrane comprises a metal substantially transparent to EUV radiation selected from Ru, Mo, La, Rh, Be, Y, Zr, Ce, Nb or Pr.
19. The lithographic apparatus as claimed in claim 18 , wherein the spectral filter membrane comprises a (poly-)Si core layer and a Ru or Mo cap layer having a thickness from 5.5 to 10 nm.
20. A membrane for a lithographic apparatus, the membrane having infrared (IR) radiation emissivity of at least 0.1 and being substantially transmissive to radiation of 6.7 nm wavelength, and the membrane comprising a core layer made from a material comprising boron, wherein the core layer has a thickness selected from 20 to 150 nm.
21. The membrane as claimed in claim 20 , wherein the core layer comprises at least one selected from: ZrB 2 , LaB 2 , TiB 2 , or MoB 2 .
22. A lithographic apparatus comprising the membrane as claimed in claim 20 .
23. A patterning device system comprising:
a patterning device configured to impart a radiation beam with a pattern in its cross-section to form a patterned radiation beam; and
the membrane as claimed in claim 20 , wherein the membrane operates as a pellicle protecting the patterning device from contamination.