Method for producing semiconductor device, semiconductor package, and method for producing semiconductor package
A method for producing a semiconductor device includes dicing, at a scribe area of a semiconductor wafer, the semiconductor wafer into semiconductor chips including respective circuit areas formed on the semiconductor wafer, the scribe area being provided between the circuit areas and extending in a first direction in a plan view, wherein the scribe area includes a first area extending in the first direction and second areas including monitor pads and extending in the first direction and located on both sides of the first area, wherein the method includes removing at least portions of the monitor pads by emitting laser beam to the second areas before the dicing, and wherein, in the dicing, the semiconductor wafer is diced at the first area.
1. A method for producing a semiconductor device, the method comprising:
dicing, at a scribe area, a semiconductor wafer into a plurality of semiconductor chips each including at least one of a plurality of circuit areas, the semiconductor wafer including the plurality of circuit areas and the scribe area provided between neighboring circuit areas of the plurality of circuit areas, the scribe area extending in a first direction in a plan view,
wherein the scribe area includes:
a first area extending in the first direction; and
second areas located on both sides of the first area in a second direction perpendicular to the first direction in the plan view, the second areas extending in the first direction, monitor pads being provided in the second areas,
wherein the method comprises:
before the dicing of the semiconductor wafer into the plurality of semiconductor chips, removing at least portions of the monitor pads by emitting laser beam along the first direction at the second areas, and
wherein, in the dicing of the semiconductor wafer into the plurality of semiconductor chips, the semiconductor wafer is diced along the first direction at the first area.
2. The method for producing the semiconductor device according to claim 1 , wherein in the scribe area, the semiconductor wafer includes monitor patterns.
3. The method for producing the semiconductor device according to claim 1 , wherein in the scribe area, the semiconductor wafer includes:
a substrate; and
a conductive trace layer provided between the substrate and the monitor pads,
wherein the removing of the at least portions of the monitor pads further comprises forming, in the monitor pads and the conductive trace layer, grooves reaching the substrate.
4. The method for producing the semiconductor device according to claim 3 , wherein the grooves are formed to extend into the substrate.
5. The method for producing the semiconductor device according to claim 1 , wherein the semiconductor chip includes at least one of the second areas.
6. A method for producing a semiconductor package comprising:
producing a semiconductor device by a method for producing a semiconductor device, the method for producing a semiconductor device comprising:
dicing, at a scribe area, a semiconductor wafer into a plurality of semiconductor chips each including at least one of a plurality of circuit areas, the semiconductor wafer including the plurality of circuit areas and the scribe area provided between neighboring circuit areas of the plurality of circuit areas, the scribe area extending in a first direction in a plan view,
wherein the scribe area includes:
a first area extending in the first direction; and
second areas located on both sides of the first area in a second direction perpendicular to the first direction in the plan view, the second areas extending in the first direction, monitor pads being provided in the second areas,
wherein the method for producing the semiconductor device comprises:
before the dicing of the semiconductor wafer into the plurality of semiconductor chips, removing at least portions of the monitor pads by emitting laser beam to the second areas, and
wherein, in the dicing of the semiconductor wafer into the plurality of semiconductor chips, the semiconductor wafer is diced at the first area;
wherein the method for producing the semiconductor package comprises:
flip-chip mounting the semiconductor device on or over a wiring substrate; and
filling, with an underfill, a space between the semiconductor device and the wiring substrate.
7. A semiconductor package comprising:
a wiring substrate; and
a semiconductor device that is produced by a method for producing a semiconductor device, the method for producing a semiconductor device comprising:
dicing, at a scribe area, a semiconductor wafer into a plurality of semiconductor chips each including at least one of a plurality of circuit areas, the semiconductor wafer including the plurality of circuit areas and the scribe area provided between neighboring circuit areas of the plurality of circuit areas, the scribe area extending in a first direction in a plan view,
wherein the scribe area includes:
a first area extending in the first direction; and
second areas located on both sides of the first area in a second direction perpendicular to the first direction in the plan view, the second areas extending in the first direction, monitor pads being provided in the second areas,
wherein the method for producing the semiconductor device comprises:
before the dicing of the semiconductor wafer into the plurality of semiconductor chips, removing at least portions of the monitor pads by emitting laser beam to the second areas, and
wherein, in the dicing of the semiconductor wafer into the plurality of semiconductor chips, the semiconductor wafer is diced at the first area; and
wherein the semiconductor device is flip-chip mounted on or over the wiring substrate, and
wherein a space between the semiconductor device and the wiring substrate is filled with an underfill.