Power semiconductor devices including angled gate trenches
A power semiconductor device comprises a semiconductor layer structure comprising a drift region that comprises a wide band-gap semiconductor material that has a first conductivity type, a well region that has a second conductivity type, and a source region that has the first conductivity type in an upper portion of the well region and a gate trench in an upper portion of the semiconductor layer structure and comprising a portion obliquely angled in plan view. Sidewalls of the gate trench may extend along substantially the same crystal plane in the semiconductor layer structure.
1. A power semiconductor device comprising:
a semiconductor layer structure comprising a drift region that comprises a wide band-gap semiconductor material that has a first conductivity type, a well region that has a second conductivity type, and a source region that has the first conductivity type in an upper portion of the well region;
a gate trench in an upper portion of the semiconductor layer structure and comprising a portion obliquely angled in plan view; and
a gate structure in the gate trench,
wherein the well region is on a side surface of the gate structure, and
wherein the well region comprises an upper outer surface having a parallelogram shape having four interior oblique angles.
2. The power semiconductor device of claim 1 , wherein the gate trench surrounds the well region in plan view.
3. The power semiconductor device of claim 2 , wherein the gate trench comprises a first gate trench and a second gate trench,
the well region comprises a plurality of first well regions spaced part from each other, and a plurality of second well regions spaced part from each other, and
the first gate trench surrounds the plurality of first well regions, and the second gate trench surrounds the plurality of second well regions.
4. The power semiconductor device of claim 1 , wherein the portion of the gate trench obliquely angled is angled at ranging from about 100 degrees to about 140 degrees in plan view.
5. A power semiconductor device comprising:
a semiconductor layer structure comprising a drift region that comprises a wide band-gap semiconductor material and has a first conductivity type
a plurality of well regions having a second conductivity type; and
a gate trench in an upper portion of the semiconductor layer structure and comprising first and second sections that define an oblique angle in plan view,
wherein, in the plan view, the gate trench is on at least a portion of each side of a first well region of the plurality of well regions.
6. The power semiconductor device of claim 5 , wherein the oblique angle is in a range of from about 115 degrees to about 125 degrees in plan view.
7. The power semiconductor device of claim 5 , wherein a second well region of the plurality of well regions is on the drift region and defines a side surface of the gate trench, and wherein the power semiconductor device further comprises a source region that has the first conductivity type that is in an upper portion of the second well region.
8. The power semiconductor device of claim 7 , wherein the first well region defines portions of the side surface of the gate trench.
9. The power semiconductor device of claim 7 , wherein the plurality of well regions comprise a first elongated well region and a second elongated well region, and the gate trench is between the first and second elongated well regions.
10. A power semiconductor device comprising:
a semiconductor layer structure comprising a drift region that comprises a wide band-gap semiconductor material and has a first conductivity type;
a gate trench in an upper portion of the semiconductor layer structure;
a gate structure in the gate trench;
a first elongated well region on a first side surface of the gate structure, the first elongated well region protruding from the drift region and having a second conductivity type;
a first source region that has the first conductivity type in an upper portion of the first elongated well region;
a second elongated well region on a second side surface of the gate structure, the second elongated well region protruding from the drift region and having the second conductivity type;
a second source region that has the first conductivity type in an upper portion of the second elongated well region; and
a plurality of island well regions having the second conductivity type positioned in between the first and second elongated well regions,
wherein a sidewall of the first elongated well region has a first section and a third section that are connected to each other by a second section, wherein the first section is parallel to the third section, and an intersection of the second section and one of the first and third sections defines an obtuse angle.
11. The power semiconductor device of claim 10 , wherein the intersection of the second section and the other one of the first and third sections defines a reflex angle.
12. The power semiconductor device of claim 10 , wherein a sidewall of the second elongated well region has a fourth section and a sixth section that connected to each other by a fifth section, wherein the fourth section is parallel to the sixth section, and an intersection of the fifth section and one of the fourth and sixth sections defines an obtuse angle.
13. The power semiconductor device of claim 10 , wherein the gate structure comprises first and second portions that are connected to each other to form an oblique angle in plan view.
14. The power semiconductor device of claim 13 , wherein the oblique angle is in a range of from about 115 degrees to about 125 degrees in plan view.
15. A power semiconductor device comprising:
a semiconductor layer structure comprising a drift region that comprises a wide band-gap semiconductor material that has a first conductivity type, a first well region that has a second conductivity type on the drift region, and a plurality of second well regions that each has the second conductivity type on the drift region;
a first gate trench in an upper portion of the semiconductor layer structure;
a second gate trench in the upper portion of the semiconductor layer structure;
a first gate structure in the first gate trench; and
a second gate structure in the second gate trench,
wherein the first well region extends continuously between the first gate trench and the second gate trench, and
a first subset of the second well regions form a plurality of first islands within the first gate structure and a second subset of the second well regions form a plurality of second islands within the second gate structure.
16. The power semiconductor device of claim 15 , wherein the first gate trench comprises a portion obliquely angled in plan view and the second gate trench comprises a portion obliquely angled in plan view.
17. The power semiconductor device of claim 15 , wherein each second well region comprises an upper outer surface having a parallelogram shape having four interior oblique angles.
18. A power semiconductor device comprising:
a semiconductor layer structure comprising a drift region that comprises a wide band-gap semiconductor material that has a first conductivity type, a continuous first well region on the drift region, a continuous second well region on the drift region and a plurality of third well regions on the drift region, where each of the first through third well regions has a second conductivity type,
wherein, in plan view, the continuous first well region extends adjacent the continuous second well region and the plurality of third well regions are positioned in between the continuous first and second well regions.
19. The power semiconductor device of claim 18 , further comprising:
a gate trench in an upper portion of the semiconductor layer structure; and
a gate structure in the gate trench,
wherein the plurality of third well regions appear as islands within the gate structure in plan view.
20. The power semiconductor device of claim 19 , wherein the gate trench comprises a portion obliquely angled in plan view.
21. The power semiconductor device of claim 19 , wherein the first angle is 120°.
22. The power semiconductor device of claim 19 , wherein the continuous first well region comprises a plurality of interconnected alternating first segments and second segments and the continuous second well region comprises a plurality of interconnected alternating first segments and second segments, and wherein each third region is positioned between a respective first segment of the continuous first well region and a respective first segment of the continuous second well region.
23. The power semiconductor device of claim 22 , wherein the first segments of the continuous first well region extend in parallel to each other and in parallel to the first segments of the continuous second well region, and the second segments of the continuous first well region extend in parallel to each other and in parallel to the second segments of the continuous second well region.
24. The power semiconductor device of claim 18 , wherein the continuous first well region comprises a plurality of interconnected alternating first segments and second segments, where the connection between each first segment and an adjacent second segment defines a first angle.
25. The power semiconductor device of claim 18 , wherein each third well region comprises an upper outer surface having a parallelogram shape having four interior oblique angles.