Integrated assemblies having thicker semiconductor material along one region of a conductive structure than along another region, and methods of forming integrated assemblies
Some embodiments include an integrated assembly having a conductive structure which includes a semiconductor material over a metal-containing material. A stack of alternating conductive levels and insulative levels is over the conductive structure. A partition extends through the stack. The partition has wall regions, and has corner regions where two or more wall regions meet. The conductive structure includes a first portion which extends directly under the corner regions, and includes a second portion which is directly under the wall regions and is not directly under the corner regions. The first portion has a first thickness of the semiconductor material and the second portion has a second thickness of the semiconductor material. The first thickness is greater than the second thickness. Some embodiments include methods of forming integrated assemblies.
1. An integrated assembly, comprising:
a semiconductor material;
a stack of alternating levels over the semiconductor material;
a partition extending through the stack and comprising wall regions, and comprising corner regions where two or more wall regions meet; and
the semiconductor material comprising a first portion which extends directly under the corner regions, and comprising a second portion which is directly under the wall regions; the first portion comprising a first thickness of the semiconductor material and the second portion comprising a second thickness of the semiconductor material; the first thickness being greater than the second thickness.
2. The integrated assembly of claim 1 wherein the second portion is not directly under the corner regions.
3. The integrated assembly of claim 1 wherein the partition directly contacts a top of the semiconductor material.
4. The integrated assembly of claim 1 wherein the stack comprises alternating conductive levels and insulative levels.
5. The integrated assembly of claim 1 wherein the semiconductor material comprises conductively doped silicon.
6. The integrated assembly of claim 1 wherein the partition only comprises insulative material.
7. The integrated assembly of claim 1 further comprising cavities extending into the first portions, at least one of the cavities being deeper than the second thickness.
8. The integrated assembly of claim 1 further comprising metal-containing material under the semiconductor material.
9. The integrated assembly of claim 1 wherein the stack comprises wordline levels.
10. The integrated assembly of claim 1 wherein the partition comprises insulative panels on opposing sides of a conductive core.