Semiconductor package including plurality of semiconductor chips and method for manufacturing the same

1. A semiconductor package comprising:

a base structure;

a first semiconductor chip over the base structure;

a second semiconductor chip over the first semiconductor chip;

an adhesive layer between the first semiconductor chip and the second semiconductor chip;

a molding layer covering the first semiconductor chip, the second semiconductor chip, and the adhesive layer, and including an interposition portion interposed between the base structure and the first semiconductor chip; and

a connecting structure electrically interconnecting the base structure and the first semiconductor chip,

wherein the interposition portion contacts the connecting structure.

2. The semiconductor package according to claim 1 , wherein the interposition portion contacts a top surface of the base structure and a bottom surface of the first semiconductor chip.

3. The semiconductor package according to claim 1 , wherein

the base structure is isolated from direct contact with the first semiconductor chip; and

a vertical distance between the base structure and the first semiconductor chip is 5 to 20 μm.

4. The semiconductor package according to claim 1 , wherein a sidewall of the interposition portion contacts a sidewall of the connecting structure.

5. The semiconductor package according to claim 1 , wherein

the first semiconductor chip comprises a lower protective layer facing the base structure; and

the molding layer entirely covers a sidewall of the lower protective layer.

6. The semiconductor package according to claim 1 , wherein the interposition portion entirely covers a bottom surface of the first semiconductor chip.

7. A semiconductor package comprising:

a base structure;

a first semiconductor chip over the base structure;

a first connecting structure electrically interconnecting the base structure and the first semiconductor chip;

a second semiconductor chip over the first semiconductor chip;

a second connecting structure electrically interconnecting the first semiconductor chip and the second semiconductor chip;

an adhesive layer between the first semiconductor chip and the second semiconductor chip; and

a molding layer covering the first semiconductor chip, the second semiconductor chip, and the adhesive layer, and including an interposition portion contacting the first connecting structure.

8. The semiconductor package according to claim 7 , wherein the adhesive layer contacts the second connecting structure.

9. The semiconductor package according to claim 7 , wherein the interposition portion is at the same level as the first connecting structure.

10. The semiconductor package according to claim 7 , wherein

the first connecting structure comprises an upper pad, a lower pad and a connecting bump; and

the interposition portion contacts the upper pad, the lower pad and the connecting bump.

11. The semiconductor package according to claim 7 , wherein

the first semiconductor chip comprises a lower protective layer facing the base structure; and

the interposition portion entirely covers a bottom surface of the lower protective layer.

12. The semiconductor package according to claim 7 , wherein, when viewed in cross-section, the interposition portion vertically overlaps with the first semiconductor chip, the second semiconductor chip, and the adhesive layer.

13. The semiconductor package according to claim 7 , wherein a horizontal width of the interposition portion is substantially equal to a horizontal width of the first semiconductor chip.

14. A semiconductor package comprising:

a base structure;

a first semiconductor chip over the base structure;

second semiconductor chips over the first semiconductor chip;

connecting structures electrically interconnecting the base structure, the first semiconductor chip and the second semiconductor chips;

adhesive layers overlapping with the base structure, the first semiconductor chip and the second semiconductor chips; and

a molding layer covering the first semiconductor chip, the second semiconductor chips, and the adhesive layers, and including an interposition portion overlapping with the base structure, the first semiconductor chip, the second semiconductor chips and the adhesive layers,

wherein the interposition portion contacts at least one of the connecting structures and a bottom surface of at least one of the first and second semiconductor chips.

15. The semiconductor package according to claim 14 , wherein a distance between the base structure and the first semiconductor chip is smaller than a distance between the second semiconductor chips.

16. The semiconductor package according to claim 14 , wherein

the adhesive layers comprises a first adhesive layer between the first semiconductor chip and a one of the second semiconductor chips adjacent to the first semiconductor chip, and a second adhesive layer between adjacent ones of the second semiconductor chips; and

the first adhesive layer and the second adhesive layer comprise different materials.

17. The semiconductor package according to claim 16 , wherein, when viewed in cross-section, a minimum vertical width of the first adhesive layer differs from a minimum vertical width of the second adhesive layer.

18. The semiconductor package according to claim 14 , wherein the interposition portion is one of a plurality of interposition portions.

19. The semiconductor package according to claim 14 , wherein

the connecting structures comprise a first connecting structure electrically interconnecting the base structure and the first semiconductor chip,

the first connecting structure comprises an upper pad electrically connected to the first semiconductor chip, and

a top surface of the interposition portion is between a top surface of the upper pad and a bottom surface of the upper pad.