Wideband back-illuminated electromagnetic radiation detectors
An electromagnetic radiation detector includes an InP substrate having a first surface opposite a second surface; a first InGaAs electromagnetic radiation absorber stacked on the first surface and configured to absorb a first set of electromagnetic radiation wavelengths; a set of one or more buffer layers stacked on the first InGaAs electromagnetic radiation absorber and configured to absorb at least some of the first set of electromagnetic radiation wavelengths; a second InGaAs electromagnetic radiation absorber stacked on the set of one or more buffer layers and configured to absorb a second set of electromagnetic radiation wavelengths; and an immersion condenser lens formed on the second surface and configured to direct electromagnetic radiation through the InP substrate and toward the first InGaAs electromagnetic radiation absorber and the second InGaAs electromagnetic radiation absorber.
1. An electromagnetic radiation detector, comprising:
an indium phosphide (InP) substrate having a first surface opposite a second surface;
a first indium gallium arsenide (InGaAs) electromagnetic radiation absorber stacked on the first surface and configured to absorb a first set of electromagnetic radiation wavelengths;
a set of one or more buffer layers stacked on the first InGaAs electromagnetic radiation absorber and configured to absorb at least some of the first set of electromagnetic radiation wavelengths;
a second InGaAs electromagnetic radiation absorber stacked on the set of one or more buffer layers and configured to absorb a second set of electromagnetic radiation wavelengths; and
an immersion condenser lens formed on the second surface and configured to direct electromagnetic radiation through the InP substrate and toward the first InGaAs electromagnetic radiation absorber and the second InGaAs electromagnetic radiation absorber; wherein,
the second set of electromagnetic radiation wavelengths includes at least some electromagnetic radiation wavelengths that are not in the first set of electromagnetic radiation wavelengths; and
a first responsivity of the first InGaAs electromagnetic radiation absorber and a second responsivity of the second InGaAs electromagnetic radiation absorber have a crossover point at an electromagnetic radiation wavelength within a water absorption band of about 1.85 μm to about 2.0 μm.
2. The electromagnetic radiation detector of claim 1 , wherein:
the set of one or more buffer layers is a first set of one or more buffer layers; and
the electromagnetic radiation detector further comprises a second set of one or more buffer layers disposed directly on the InP substrate, between the InP substrate and the first InGaAs electromagnetic radiation absorber.
3. The electromagnetic radiation detector of claim 2 , wherein the second set of one or more buffer layers comprises one or more indium arsenide phosphide (InAsP) layers.
4. The electromagnetic radiation detector of claim 1 , wherein:
at least the InP substrate, the first InGaAs electromagnetic radiation absorber, the set of one or more buffer layers, the second InGaAs electromagnetic radiation absorber, and the immersion condenser lens define at least a first detector unit; and
the electromagnetic radiation detector comprises an array of detector units including the first detector unit, each detector unit in the array of detector units including a different portion of at least the InP substrate, the first InGaAs electromagnetic radiation absorber, the set of one or more buffer layers, and the second InGaAs electromagnetic radiation absorber.
5. The electromagnetic radiation detector of claim 1 , wherein a first responsivity of the first InGaAs electromagnetic radiation absorber and a second responsivity of the second InGaAs electromagnetic radiation absorber have a crossover point at an electromagnetic radiation wavelength of about 1.9 micrometers.
6. The electromagnetic radiation detector of claim 1 , wherein the first and second InGaAs electromagnetic radiation absorbers are configured as two photodetectors facing a same direction and are connected by a tunnel junction.
7. The electromagnetic radiation detector of claim 1 , wherein the set of one or more buffer layers comprises one or more indium arsenide phosphide (InAsP) layers.
8. An electromagnetic radiation detection system, comprising:
a substrate;
on a first surface of the substrate,
a first indium gallium arsenide (InGaAs) electromagnetic radiation absorber;
a second InGaAs electromagnetic radiation absorber; and
a buffer positioned between the first and second InGaAs electromagnetic radiation absorbers;
a first electromagnetic radiation emitter;
a second electromagnetic radiation emitter; and
a detection circuit configured to operate the first and second electromagnetic radiation emitters, and to separately detect,
first electromagnetic radiation emitted by the first electromagnetic radiation emitter by reading a first current generated by the first InGaAs electromagnetic radiation absorber; and
second electromagnetic radiation emitted by the second electromagnetic radiation emitter by reading a second current generated by the second InGaAs electromagnetic radiation absorber; wherein,
a first responsivity of the first InGaAs electromagnetic radiation absorber and a second responsivity of the second InGaAs electromagnetic radiation absorber have a crossover point at an electromagnetic radiation wavelength in a range of about 1.9 μm to about 2.0 μm.
9. The electromagnetic radiation detection system of claim 8 , wherein the detection circuit is configured to operate the first and second electromagnetic radiation emitters at a same time, while separately detecting the first and second electromagnetic radiation emitted by the first and second electromagnetic radiation emitters.
10. The electromagnetic radiation detection system of claim 8 , wherein the detection circuit is configured to operate the first and second electromagnetic radiation emitters at different times, while separately detecting the first and second electromagnetic radiation emitted by the first and second electromagnetic radiation emitters.
11. The electromagnetic radiation detection system of claim 8 , wherein the buffer is a first buffer and the electromagnetic radiation detection system further comprises:
on the first surface of the substrate,
a second buffer positioned between the substrate and the first InGaAs electromagnetic radiation absorber.
12. The electromagnetic radiation detection system of claim 8 , further comprising:
on a second surface of the substrate, opposite the first surface,
an immersion condenser lens configured to direct electromagnetic radiation through the substrate and toward the first and second InGaAs electromagnetic radiation absorbers.
13. The electromagnetic radiation detection system of claim 8 , wherein a first absorption range of the first InGaAs electromagnetic radiation absorber and a second absorption range of the second InGaAs electromagnetic radiation absorber are non-overlapping.
14. The electromagnetic radiation detection system of claim 8 , wherein the buffer comprises one or more indium arsenide phosphide (InAsP) layers.
15. An electronic device, comprising:
a housing;
an electromagnetic radiation emitter configured to emit electromagnetic radiation through the housing; and
an electromagnetic radiation detector configured to receive electromagnetic radiation returned from a target; wherein,
the electromagnetic radiation detector includes,
a substrate having a first surface opposite a second surface;
a first buffer stacked directly on the first surface;
a first indium gallium arsenide (InGaAs) electromagnetic radiation absorber stacked on the first buffer and configured to absorb a first set of electromagnetic radiation wavelengths;
a second buffer stacked on the first InGaAs electromagnetic radiation absorber and configured to absorb at least some of the first set of electromagnetic radiation wavelengths; and
a second InGaAs electromagnetic radiation absorber stacked on the second buffer and configured to absorb a second set of electromagnetic radiation wavelengths; wherein,
the second set of electromagnetic radiation wavelengths includes at least some electromagnetic radiation wavelengths that are not in the first set of electromagnetic radiation wavelengths; and
a first responsivity of the first InGaAs electromagnetic radiation absorber and a second responsivity of the second InGaAs electromagnetic radiation absorber have a crossover point at an electromagnetic radiation wavelength within a water absorption band of about 1.85 μm to about 2.0 μm.
16. The electronic device of claim 15 , wherein the substrate is an indium phosphide (InP) substrate.
17. The electronic device of claim 15 , further comprising:
a first electrical contact on the first buffer;
a second electrical contact on the second InGaAs electromagnetic radiation absorber; and
a third electrical contact on the second buffer.
18. The electronic device of claim 15 , further comprising:
a first electrical contact on the first buffer; and
a second electrical contact on the second InGaAs electromagnetic radiation absorber; wherein,
the first and second electrical contacts are forward biased or reverse biased to read a current generated by the first InGaAs electromagnetic radiation absorber or the second InGaAs electromagnetic radiation absorber.
19. The electronic device of claim 15 , further comprising:
a cap layer stacked on the second InGaAs electromagnetic radiation absorber; wherein,
the cap layer, the second InGaAs electromagnetic radiation absorber, the second buffer, and the first InGaAs electromagnetic radiation absorber are configured as a pnnp, nppn, or pnpn layer structure.
20. The electronic device of claim 15 , wherein:
the housing has a back configured to face skin of a user when the electronic device is worn on a body part of the user; and
the electronic device further comprises a band configured to attach the housing to the body part.
21. The electronic device of claim 15 , wherein each of the first buffer and the second buffer comprise one or more indium arsenide phosphide (InAsP) layers.