Electromagnetic radiation detectors integrated with immersion lenses

1. An electromagnetic radiation detector pixel, comprising:

a set of epitaxial layers defining,

an electromagnetic radiation absorber; and

a stepped electrical contact on the electromagnetic radiation absorber;

a lens directly bonded to the set of epitaxial layers; and

a conductor; wherein,

the stepped electrical contact has a first surface at a first distance from the lens and a second surface at a second distance from the lens, the second distance greater than the first distance;

the lens is directly bonded to the first surface; and

the conductor is electrically connected to the second surface and spaced apart from the lens.

2. The electromagnetic radiation detector pixel of claim 1 , further comprising a set of one or more bond-facilitating layers disposed between the set of epitaxial layers and the lens.

3. The electromagnetic radiation detector pixel of claim 2 , wherein the set of one or more bond-facilitating layers comprises a layer of silicon dioxide (SiO 2 ).

4. The electromagnetic radiation detector pixel of claim 2 , wherein the set of one or more bond-facilitating layers comprises a layer of silicon nitride (SiN).

5. The electromagnetic radiation detector pixel of claim 2 , wherein the set of one or more bond-facilitating layers comprises:

a layer of silicon nitride (SiN); and

a layer of silicon dioxide (SiO 2 ).

6. The electromagnetic radiation detector pixel of claim 1 , wherein:

the electromagnetic radiation absorber comprises indium gallium arsenide (InGaAs); and

the lens comprises silicon (Si).

7. The electromagnetic radiation detector pixel of claim 1 , further comprising an air gap between the conductor and the lens.

8. The electromagnetic radiation detector pixel of claim 1 , further comprising a silicon dioxide (SiO 2 ) fill material disposed around a portion of the stepped electrical contact, and disposed between the conductor and the lens.

9. The electromagnetic radiation detector pixel of claim 1 , further comprising a dielectric disposed between a portion of the conductor and a portion of the set of epitaxial layers.

10. The electromagnetic radiation detector pixel of claim 9 , wherein the dielectric comprises a first dielectric, the electromagnetic radiation detector pixel further comprising:

a second dielectric disposed on the conductor, with at least a portion of the conductor between the first dielectric and the second dielectric; and

a silicon dioxide (SiO 2 ) fill material disposed around a portion of the stepped electrical contact, and disposed between the second dielectric and the lens.

11. The electromagnetic radiation detector pixel of claim 1 , wherein the set of epitaxial layers comprises at least one buffer layer disposed on a side of the electromagnetic radiation absorber opposite the stepped electrical contact.

12. A front-side illumination (FSI) electromagnetic radiation detector pixel, comprising:

an indium gallium arsenide (InGaAs) electromagnetic radiation absorber;

a stepped electrical contact on the InGaAs electromagnetic radiation absorber, the stepped electrical contact having a first surface offset from a second surface, the first surface and the second surface facing a same direction;

a silicon (Si) lens directly bonded to the first surface;

a set of one or more bond-facilitating layers disposed between the first surface and the Si lens, the set of one or more bond-facilitating layers including silicon dioxide (SiO 2 ); and

a conductor disposed between the InGaAs electromagnetic radiation absorber and the SI lens and in electrical contact with the stepped electrical contact.

13. The FSI electromagnetic radiation detector pixel of claim 12 , further comprising an air gap between the conductor and the Si lens.

14. The FSI electromagnetic radiation detector pixel of claim 12 , further comprising a planarized silicon dioxide (SiO 2 ) fill between the conductor and the Si lens.