Integrated structures, capacitors and methods of forming capacitors
Some embodiments include an integrated structure having a semiconductor base and an insulative frame over the semiconductor base. The insulative frame has vertically-spaced sheets of first insulative material, and pillars of second insulative material between the vertically-spaced sheets. The first and second insulative materials are different from one another. Conductive plates are between the vertically-spaced sheets and are directly against the insulative pillars. Some embodiments include capacitors, and some embodiments include methods of forming capacitors.
1. A method of forming a capacitor, comprising:
forming a stack of alternating first and second levels; the first levels comprising first insulative material and the second levels comprising second insulative material; the second insulative material being compositionally different from the first insulative material;
forming a plurality of individual slots extending through the stack; the individual slots having a pair of ends and a central region between the ends;
exhuming the second insulative material with etchant provided in the individual slots to form voids within the second levels; the exhuming only removing some of the second insulative material to leave a remainder of the second insulative material as insulative pillars within the second levels and proximate the ends of the individual slots; and
filling the individual slots and the voids with conductive material, and forming conductive plates from the conductive material within the second levels.
2. The method of claim 1 wherein the capacitor is integrated into circuitry on a die, and wherein exhuming of the second insulative material and the filling of the voids with the conductive material occur simultaneously with identical process steps utilized in fabricating a three-dimensional NAND memory array on the same die.
3. The method of claim 1 wherein one of the first and second insulative materials comprises silicon dioxide and the other comprises silicon nitride.
4. The method of claim 1 wherein the first insulative material comprises silicon dioxide and the second insulative material comprises silicon nitride.
5. The method of claim 1 wherein the conductive plates are each a continuous sheet wrapping around the insulative pillars.
6. The method of claim 1 wherein the insulative pillars form walls which subdivide the conductive plates of individual second levels into panels.
7. The method of claim 1 wherein the individual slots are arranged in rows, with the individual slots in each row being laterally aligned with individual slots in all other rows.
8. The method of claim 1 wherein the individual slots are arranged in alternating first and second rows, with the individual slots of the first rows having a laterally offset relative to the individual slots of the second rows.
9. The method of claim 1 wherein the lateral offset is at least about one-fourth of a length of the individual slots.
10. The method of claim 1 wherein the lateral offset is less than one-fourth of a length of the individual slots.