Die stack with reduced warpage
A microelectronic device can include a polymer, a semiconductor, and a matching layer. The polymer can include a first coefficient of thermal expansion. The semiconductor can be coupled to the polymer layer. The matching layer can be adjacent the semiconductor, and the matching layer can include a second coefficient of thermal expansion that is about the same as the first coefficient of thermal expansion.
1. An electronic device comprising a plurality of die including a first die and a second die, each of the plurality of die comprising:
a first layer including a first polymer material and one or more electrical traces,
wherein the first polymer material has a first coefficient of thermal expansion; a second layer including a semiconductor material,
wherein the first layer is attached to a first side of the second layer;
a third layer including a second polymer material having a second coefficient of thermal expansion,
wherein the third layer is attached to a second side of the second layer and wherein the second coefficient of thermal expansion is between about 15 and about 25 parts per million per Kelvin; and
wherein the first coefficient of thermal expansion is substantially similar to the second coefficient of thermal expansion.
2. The electronic device of claim 1 , wherein the first coefficient of thermal expansion is substantially similar to the second coefficient of thermal expansion to balance stresses applied to the first side of the second layer with stresses applied to the second side of the second layer.
3. The electronic device of claim 1 , wherein the first coefficient of thermal expansion is substantially similar to the second coefficient of thermal expansion to inhibit warping of the second layer.
4. The electronic device of claim 1 , wherein the first layer includes a first side and a second side and the second layer is attached to the first side of the first layer, the electronic device further comprising:
a fourth layer including a third polymer material having a third coefficient of thermal expansion wherein the fourth layer is attached to the second side of the first layer; and
wherein the third coefficient of thermal expansion is substantially similar to the first coefficient of thermal expansion and the second coefficient of thermal expansion.
5. The electronic device of claim 1 , further comprising an adhesive layer attached to the third layer.
6. The electronic device of claim 1 , wherein the third layer includes one or more of a polyimide or an epoxy resin.
7. The electronic device of claim 1 , further comprising a substrate, wherein the first layer is located between the substrate and the second layer.
8. An electronic device, comprising a plurality of die including a first die and a second die, each of the plurality of die comprising:
a first layer including a first polymer material and one or more electrical traces,
wherein the first polymer material has a first coefficient of thermal expansion; a second layer including a semiconductor material,
wherein the first layer is attached to a first side of the second layer; a third layer including a second polymer material having a second coefficient of thermal expansion, wherein the third layer is attached to a second side of the second layer;
wherein the first coefficient of thermal expansion is substantially similar to the second coefficient of thermal expansion; and
wherein the third layer has a thickness of about 5 microns to about 10 microns.
9. An electronic device, comprising a plurality of die including a first die and a second die, each of the plurality of die comprising:
a first layer including a first polymer material and one or more electrical traces, wherein the first polymer material has a first coefficient of thermal expansion;
a second layer including a semiconductor material, wherein the first layer is attached to a first side of the second layer;
a third layer including a second polymer material having a second coefficient of thermal expansion, wherein the third layer is attached to a second side of the second layer;
wherein the first coefficient of thermal expansion is substantially similar to the second coefficient of thermal expansion; and wherein the third layer does not include a conductive material.
10. An electronic device, comprising:
a plurality of die including a first die attached to a second die, each of the plurality of die including:
a first layer including a first polymer material and one or more electrical traces, wherein the first polymer material has the first coefficient of thermal expansion;
a second layer including a semiconductor material, wherein the first layer is attached to a first side of a second layer;
a third layer including a second polymer material having a second coefficient of thermal expansion, wherein the third layer is attached to a second side of the second layer;
wherein the first coefficient of thermal expansion is substantially similar to the second coefficient of thermal expansion; and
wherein the first layer of each of the plurality of die includes a first side and a second side and the second layer of each of the plurality of die is attached to the first side of the first layer, wherein each of the plurality of die includes:
a fourth layer including a third polymer material having a third coefficient of thermal expansion, wherein the fourth layer is attached to the second side of the first layer; and
wherein the third coefficient of thermal expansion is substantially similar to the first coefficient of thermal expansion and substantially similar to the second coefficient of thermal expansion.
11. An electronic device, comprising:
a plurality of die including a first die attached to a second die, each of the plurality of die including:
a first layer including a first polymer material and one or more electrical traces, wherein the first polymer material has the first coefficient of thermal expansion;
a second layer including a semiconductor material, wherein the first layer is attached to a first side of a second layer;
a third layer including a second polymer material having a second coefficient of thermal expansion, wherein the third layer is attached to a second side of the second layer;
wherein the first coefficient of thermal expansion is substantially similar to the second coefficient of thermal expansion; and
a substrate, wherein the first die is located between the substrate and the second die.
12. The electronic device of claim 11 , further comprising one or more conductors coupled between the first die and the substrate.
13. An electronic device, comprising:
a plurality of die including a first die attached to a second die, each of the plurality of die including:
a first layer including a first polymer material and one or more electrical traces, wherein the first polymer material has the first coefficient of thermal expansion;
a second layer including a semiconductor material, wherein the first layer is attached to a first side of a second layer;
a third layer including a second polymer material having a second coefficient of thermal expansion, wherein the third layer is attached to a second side of the second layer; and
wherein the first coefficient of thermal expansion is substantially similar to the second coefficient of thermal expansion, and the second die is stacked upon the first die.
14. The electronic device of claim 13 , further comprising an adhesive located between the first die and the second die, wherein the adhesive is configured to attach the first die with the second die.
15. An electronic device, comprising:
a substrate, and
a plurality of die including a first die and a second die, each of the plurality of die including:
a first layer including a first polymer material and one or more electrical traces, wherein the first polymer material has a first coefficient of thermal expansion;
a second layer including a semiconductor material, wherein the first layer is attached to a first side of the second layer; and
a third layer including a second polymer material having a second coefficient of thermal expansion, wherein the third layer is attached to a second side of the second layer;
a fourth layer including a third polymer material having a third coefficient of thermal expansion, wherein the fourth layer is attached to the first layer opposite the second layer; and
wherein each of the first coefficient of thermal expansion, the second coefficient of thermal expansion, and the third coefficient of thermal expansion are substantially similar.
16. The electronic device of claim 15 wherein each of the first coefficient of thermal expansion, the second coefficient of thermal expansion, and the third coefficient of thermal expansion are substantially similar to balance stresses applied to the first side of the second layer with stresses applied to the second side of the second layer.
17. The electronic device of claim 15 wherein each of the first coefficient of thermal expansion, the second coefficient of thermal expansion, and the third coefficient of thermal expansion are substantially similar to inhibit warping of the second layer.
18. The electronic device of claim 15 , further comprising an encapsulation material coupled with the plurality of die and the substrate.