Compound semiconductor x-ray detector tiles and method of dicing thereof

1. A radiation detector tile, comprising a single crystal compound semiconductor tile having a zinc blende crystal structure and having a (111) plane first major surface and four side surfaces which are rotated by an angle of 13° to 17° to a {110} family of planes.

2. The radiation detector tile of claim 1 , wherein the tile comprises single crystal CdTe or its iso-valent alloy.

3. The radiation detector tile of claim 2 , wherein the tile comprises single crystal cadmium zinc telluride.

4. The radiation detector tile of claim 1 , wherein the four side surfaces are rotated by an angle of 14° to 16° to the {110} family of planes.

5. The radiation detector tile of claim 1 , wherein the four side surfaces are rotated by an angle of 15° to the {110} family of planes.

6. A radiation detector, comprising:

the radiation detector tile of claim 1 ;

at least one anode located on a major surface of the radiation detector tile; and

at least one cathode located on another major surface of the radiation detector tile.

7. The radiation detector of claim 6 , wherein:

the radiation detector comprises an X-ray radiation detector;

the at least one cathode is located on a (−1−1−1) plane major surface of the radiation detector tile;

the at least one anode comprises a plurality of anodes located on the (111) plane major surface of the radiation detector tile;

the X-ray radiation detector comprises a plurality of detector pixels; and

each detector pixel contains one anode of the plurality of anodes.

8. An X-ray imaging system, comprising:

a plurality of X-ray radiation detectors of claim 7 ;

an X-ray source;

a bias power supply; and

a control unit configured to apply a voltage from the bias power supply to the plurality of X-ray radiation detectors.