Edge structures for light shaping in light-emitting diode chips
Light-emitting diodes (LEDs), and more particularly edge structures for light shaping in LED chips are disclosed. Edge structures may include a repeating pattern of features that is formed along one or more mesa sidewalls of active LED structure mesas. Such active LED structure mesas may include a p-type layer, an active layer, and at least a portion of an n-type layer. Features of the repeating pattern may be configured with a size and/or shape to promote redirection of laterally propagating light from the active layer at the mesa sidewalls. In this manner, light that may otherwise escape the LED chip at the mesa sidewalls may be redirected toward an intended emission direction for the LED chip. Certain aspects include reflective structures that are provided on the active LED structures mesas and are further arranged to extend past the active LED structure mesas to cover the repeating pattern of features.
1. A light emitting diode (LED) chip, comprising:
an n-type layer;
a p-type layer;
an active layer arranged between the n-type layer and the p-type layer, wherein the p-type layer, the active layer, and a portion of the n-type layer form an active LED structure mesa with at least one mesa sidewall, wherein the at least one mesa sidewall forms a shape with a repeating pattern along only a first portion of the at least one mesa sidewall such that a second portion of the at least one mesa sidewall is devoid of any repeating pattern; and
a reflective structure on the active LED structure mesa and on the at least one mesa sidewall, wherein the reflective structure is arranged to cover the repeating pattern.
2. The LED chip of claim 1 , wherein the reflective structure comprises a first reflective layer on the active LED structure mesa and on the at least one mesa sidewall.
3. The LED chip of claim 2 , wherein the reflective structure comprises a second reflective layer on the active LED structure mesa and on the at least one mesa sidewall, wherein the first reflective layer is arranged between the second reflective layer and the active LED structure mesa.
4. The LED chip of claim 3 , wherein the first reflective layer comprises a dielectric layer and the second reflective layer comprises a metal layer.
5. The LED chip of claim 1 , further comprising a p-contact electrically connected to the p-type layer and an n-contact electrically connected to the n-type layer, wherein a portion of the n-contact extends past the active LED structure mesa to electrically connect with portions of the n-type layer that are outside the active LED structure mesa.
6. The LED chip of claim 5 , wherein the at least one mesa sidewall is one of a plurality of mesa sidewalls of the active LED structure mesa, and the n-contact electrically connects with portions of the n-type layer outside of three mesa sidewalls of the plurality of mesa sidewalls.
7. The LED chip of claim 1 , wherein the repeating pattern is formed by a plurality of features in the at least one mesa sidewall and each feature of the plurality of features abuts at least one neighboring feature of the plurality of features at an intersection.
8. The LED chip of claim 7 , wherein each feature of the plurality of features forms an outwardly curved surface of the at least one mesa sidewall.
9. The LED chip of claim 7 , wherein each feature of the plurality of features forms an inwardly curved surface of the at least one mesa sidewall.
10. The LED chip of claim 7 , wherein each feature of the plurality of features forms a triangular cross-sectional shape along the at least one mesa sidewall.
11. The LED chip of claim 7 , wherein each feature of the plurality of features forms a trapezoidal cross-sectional shape along the at least one mesa sidewall.
12. The LED chip of claim 7 , wherein each feature of the plurality of features forms a rectangular cross-sectional shape along the at least one mesa sidewall.
13. A light emitting diode (LED) chip, comprising:
an n-type layer;
a p-type layer; and
an active layer arranged between the n-type layer and the p-type layer, wherein the p-type layer, the active layer, and a portion of the n-type layer form an active LED structure mesa with at least one mesa sidewall;
wherein the at least one mesa sidewall forms a repeating pattern along the at least one mesa sidewall, the repeating pattern being formed by a plurality of features, wherein each feature of the plurality of features is an outwardly curved surface of the at least one mesa sidewall and each feature abuts at least one next-adjacent feature of the plurality of features at an intersection with the outwardly curved surface of the at least one next-adjacent feature.
14. The LED chip of claim 13 , wherein a width of each feature of the plurality of features is in a range from 15 microns (μm) to 35 μm.
15. The LED chip of claim 14 , wherein the width of each feature of the plurality of features is in a range from 20 μm to 35 μm.
16. The LED chip of claim 13 , wherein the repeating pattern extends along at least one mesa sidewall corner of the active LED structure mesa.
17. The LED chip of claim 13 , wherein at least one mesa sidewall corner of the active LED structure mesa is devoid of the repeating pattern.
18. A light emitting diode (LED) chip, comprising:
an n-type layer;
a p-type layer; and
an active layer arranged between the n-type layer and the p-type layer;
wherein the p-type layer, the active layer, and a portion of the n-type layer form an active LED structure mesa with mesa sidewalls and mesa sidewall corners, wherein the mesa sidewalls form a repeating pattern of outwardly curved features having a same width along a first portion of the each mesa sidewall and the repeating pattern does not extend to a second portion of each mesa sidewall proximate the mesa sidewall corners.
19. The LED chip of claim 18 , wherein the repeating pattern is formed by a plurality of features in the mesa sidewalls and each feature of the plurality of features abuts at least one next-adjacent feature of the plurality of features at an intersection.
20. The LED chip of claim 19 , where the intersection is formed by intersecting surfaces of next-adjacent features of the plurality of features.
21. The LED chip of claim 19 , wherein a width of each feature of the plurality of features is in a range from 15 microns (μm) to 35 μm.
22. The LED chip of claim 18 , further comprising a reflective structure on the active LED structure mesa and on the mesa sidewalls, wherein the reflective structure is arranged to cover the repeating pattern.