Integrated chip (IC) having conductive TSV extended through SOI substrate comprising a semiconductor device layer, an insulating layer and a metal layer
Various embodiments of the present disclosure are directed towards an integrated chip (IC). The IC includes a substrate. The substrate includes a metal layer, a device layer disposed over the metal layer, and an insulating layer disposed vertically between the metal layer and the device layer. A semiconductor device is disposed on the device layer. An interlayer dielectric (ILD) layer is disposed over the semiconductor device and the substrate.
1. An integrated chip (IC), comprising:
a device layer comprising semiconductor material, the device layer having a four-sided outermost perimeter as viewed from above;
an interconnect structure disposed over the device layer when viewed in a cross-sectional view;
an insulating layer having an upper surface in direct contact with a lower surface of the device layer when viewed in the cross-sectional view, the insulating layer having an outermost four-sided perimeter as viewed from above, wherein the outermost four-sided perimeter of the insulating layer is identical in size and shape to the four-sided outermost perimeter of the device layer;
a metal layer that is a single continuous metal body, an entirety of an uppermost surface of the metal layer being in direct contact with a lowermost surface of the insulating layer when viewed in the cross-sectional view, the single continuous metal body of the metal layer having an outermost four-sided perimeter as viewed from above, wherein the outermost four-sided perimeter of the single continuous metal body of the metal layer is identical in size and shape to the outermost four-sided perimeter of the insulating layer and the four-sided outermost perimeter of the device layer;
a conductive structure having vertical outer sidewalls that extend continuously from an upper surface of the device layer, through the insulating layer, and to a bottom surface of the metal layer when viewed in the cross-sectional view;
a first isolation structure separating the vertical outer sidewalls of the conductive structure from the device layer, the first isolation structure having a bottom surface that terminates at an interface where a lower surface of the device layer meets an upper surface of the insulating layer; and
a second isolation structure separating the vertical outer sidewalls of the conductive structure from the metal layer, the second isolation structure having a top surface that terminates at an interface where a lower surface of the insulating layer meets an upper surface of the metal layer, wherein the insulating layer separates the top surface of the second isolation structure from the bottom surface of the first isolation structure.
2. The IC of claim 1 , wherein the second isolation structure has a second width, wherein the second width is defined between vertical outer sidewalls of the second isolation structure and the second width is greater than a smallest value of a width of the first isolation structure along the conductive structure.
3. The IC of claim 1 , wherein the conductive structure is electrically coupled to the metal layer via a conductive layer beneath a lower surface of the metal layer.
4. The IC of claim 1 , wherein the insulating layer is laterally outside a region defined by outermost sidewalls of the conductive structure when viewed from a cross section, and wherein the region has the same height as the conductive structure.
5. The IC of claim 1 :
wherein the first isolation structure has tapered outer sidewalls that define a first isolation structure width that varies along the conductive structure; and
wherein the second isolation structure is defined between vertical outer sidewalls whose sidewall angle differs from that of the tapered outer sidewalls of the first isolation structure.
6. An integrated chip (IC), comprising:
a substrate comprising:
a metal layer defining a backside of the substrate, wherein the metal layer is a single continuous metal body having outer sidewalls that connect an uppermost surface of the metal layer with a lower surface of the metal layer when viewed in a cross-sectional view, and wherein the outer sidewalls of the single continuous metal body define an outermost perimeter of the metal layer when viewed in a top view, the outermost perimeter of the metal layer being four-sided when viewed in the top view;
a device layer disposed over the metal layer when viewed in the cross-sectional view, wherein the device layer is a first semiconductor material and defines a frontside of the substrate, the frontside being opposite the backside; and
an insulating layer disposed vertically between the metal layer and the device layer when viewed in the cross-sectional view, wherein the insulating layer is a single continuous insulator body having outer sidewalls that connect an uppermost surface of the insulating layer with a lower surface of the insulating layer when viewed in the cross-sectional view, and wherein the outer sidewalls of the single continuous insulating body define an outermost perimeter of the insulating layer when viewed in a top view, the outermost perimeter of the insulating layer being four-sided and congruous with the outermost perimeter of the metal layer when viewed in the top view, and wherein a lowermost surface of the insulating layer is in direct contact with an entirety of an uppermost surface of the metal layer;
a semiconductor device disposed in or on the device layer;
an interlayer dielectric (ILD) layer disposed over the semiconductor device and the substrate;
a conductive layer disposed below the backside of the substrate;
a first through-substrate via (TSV) extending vertically from the conductive layer continuously through the metal layer, continuously through the insulating layer, through the device layer, and into the ILD layer to contact a conductive feature in the ILD layer;
a first isolation structure separating an upper portion of the outer sidewalls of the first TSV from the device layer, the first isolation structure having a bottom surface that terminates at an interface where a lower surface of the device layer meets an upper surface of the insulating layer; and
a second isolation structure separating a lower portion of the outer sidewalls of the first TSV from the metal layer, the second isolation structure having a top surface that terminates at an interface where a lower surface of the insulating layer meets an upper surface of the metal layer,
wherein the insulating layer separates the top surface of the second isolation structure from the bottom surface of the first isolation structure.
7. The IC of claim 6 , wherein the first TSV is a metal.
8. The IC of claim 6 , further comprising:
a dielectric layer disposed below the metal layer, wherein the conductive layer comprises a first metal wire disposed below the dielectric layer, and wherein the dielectric layer vertically separates at least a portion of the first metal wire from the metal layer.
9. The IC of claim 8 ,
wherein the first metal wire has a first end that is electrically coupled to the first TSV.
10. The IC of claim 9 , wherein the first metal wire comprises:
a lateral portion that extends laterally below the dielectric layer from the first TSV to a first location; and
a vertical portion that extends from the first location vertically through the dielectric layer to the metal layer, such that the first metal wire electrically couples the first TSV to the metal layer.
11. The IC of claim 10 , further comprising:
a second TSV extending through the substrate and the dielectric layer, wherein the second TSV is laterally spaced from the first TSV; and
a second metal wire electrically coupled to the second TSV and disposed below the dielectric layer, wherein the dielectric layer vertically separates the second metal wire from the metal layer, and wherein the second metal wire is laterally spaced from the first metal wire.
12. The IC of claim 9 , wherein the first metal wire has a second end that is electrically coupled to the metal layer.
13. The IC of claim 6 , wherein the first TSV is electrically coupled to the metal layer through the conductive layer.
14. The IC of claim 6 :
wherein the first isolation structure has tapered outer sidewalls that are angled at a first angle relative to a lower surface of the device layer such that the first isolation structure has a first isolation structure width that varies as measured at different depths of the first TSV and as measured perpendicular to the outer sidewalls of the first TSV; and
wherein the second isolation structure is defined between outer sidewalls that are angled at a second angle as measured relative to the lower surface of the device layer, wherein the second angle differs from the first angle.
15. The IC of claim 6 :
wherein the insulating layer comprises a first dielectric material, and at least one of the first isolation structure or second isolation structure comprises a second dielectric material that is different from the first dielectric material.
16. An integrated chip (IC), comprising:
a substrate comprising:
a metal layer, wherein the metal layer is a single continuous metal body having a thickness of between 1 micrometer and 5 micrometers defined between an uppermost surface of the metal layer and a lower surface of the metal layer when viewed in a cross-sectional view, and wherein outer sidewalls of the single continuous metal body define an outermost perimeter of the metal layer when viewed in a top view, the outermost perimeter of the metal layer being four-sided when viewed in the top view;
a device layer disposed over the metal layer when viewed in a cross-sectional view, wherein the device layer is a semiconductor material, wherein outer sidewalls of the device layer define an outermost perimeter of the device layer when viewed in a top view, the outermost perimeter of the device layer being four-sided and congruous with the outermost perimeter of the metal layer when viewed in the top view; and
an insulating layer disposed vertically between the metal layer and the device layer when viewed in the cross-sectional view, a lowermost surface of the insulating layer being in direct contact with an entirety of an uppermost surface of the metal layer, wherein outer sidewalls of the insulating layer define an outermost perimeter of the insulating layer when viewed in a top view, the outermost perimeter of the insulating layer being four-sided and congruous with the outermost perimeter of the metal layer when viewed in the top view;
a semiconductor device disposed in or on the device layer;
an interlayer dielectric (ILD) structure disposed over the semiconductor device and the substrate;
a conductive interconnect structure embedded in the ILD structure and disposed over a frontside of the substrate, wherein the conductive interconnect structure comprises a group of conductive lines that define a first layer of conductive lines;
a conductive layer disposed below a backside of the substrate, the backside being opposite the frontside;
a first conductive structure extending vertically through the ILD structure, the device layer, the insulating layer, and the metal layer, wherein the first conductive structure electrically couples a first conductive line of the group of conductive lines to the conductive layer, wherein the first conductive structure is laterally spaced from the metal layer, and wherein the first conductive structure is electrically coupled to the metal layer through the conductive layer;
a first isolation structure separating an upper portion of outer sidewalls of the first conductive structure from the device layer, the first isolation structure having a bottom surface that terminates at an interface where a lower surface of the device layer meets an upper surface of the insulating layer; and
a second isolation structure separating a lower portion of the outer sidewalls of the first conductive structure from the metal layer, the second isolation structure having a top surface that terminates at an interface where a lower surface of the insulating layer meets an upper surface of the metal layer,
wherein the insulating layer separates the top surface of the second isolation structure from the bottom surface of the first isolation structure.
17. The IC of claim 16 , further comprising:
a dielectric layer disposed below the bottom surface of the metal layer, below the first isolation structure, and below the second isolation structure, wherein the conductive layer comprises a first metal wire disposed partially in the dielectric layer, wherein the first conductive structure extends through the dielectric layer to the conductive layer so that the first conductive structure is electrically coupled to the first metal wire, wherein the first metal wire comprises a lateral portion that extends laterally below the dielectric layer from the first conductive structure to a first location, and wherein the first metal wire comprises a vertical portion that extends from the first location vertically through the dielectric layer to the metal layer, such that the first metal wire electrically couples the first conductive structure to the metal layer.
18. The IC of claim 17 , further comprising:
a third isolation structure disposed in the device layer and extending vertically from the ILD structure to the insulating layer;
a fourth isolation structure disposed in the metal layer and extending vertically from the insulating layer to the bottom surface of the dielectric layer;
a second metal wire disposed below the dielectric layer, wherein the second metal wire is different than the first metal wire; and
a second conductive structure extending vertically through the ILD structure, the third isolation structure, the insulating layer, the fourth isolation structure, and the dielectric layer to the second metal wire, such that the second conductive structure electrically couples a second conductive line of the group of conductive lines to the second metal wire.
19. The IC of claim 16 , wherein the insulating layer is laterally outside a region defined by outermost sidewalls of the first conductive structure when viewed from a cross section, and wherein the region has the same height as the conductive structure.
20. The IC of claim 16 :
wherein the first isolation structure has tapered outer sidewalls that are angled at a first angle relative to a lower surface of the device layer such that the first isolation structure has a first isolation structure width that varies as measured at different depths of the first conductive structure and as measured perpendicular to the outer sidewalls of the first conductive structure; and
wherein the second isolation structure is defined between vertical outer sidewalls that are angled at a second angle as measured relative to the lower surface of the device layer, wherein the second angle differs from the first angle.