Hall effect sensor with reduced JFET effect
A Hall effect sensor including a Hall element disposed at a surface of a semiconductor body, including a first doped region of a first conductivity type disposed over and abutted by an isolated second doped region of a second conductivity type. First through fourth terminals of the Hall element are in electrical contact with the first doped region, and a fifth terminal in electrical contact with the second doped region. A Hall effect sensor includes a first current source coupled to the first terminal of the Hall element, and common mode feedback regulation circuitry. The common mode feedback regulation circuitry has an output coupled to the third terminal and a ground node, and having an input coupled to the second and fourth terminals of the Hall element, and an output coupled to the third terminal and a ground node, where the second doped region is coupled to the third terminal.
1 . A Hall effect sensor, comprising:
a Hall element disposed at a surface of a semiconductor body and comprising:
a first doped region of a first conductivity type;
a second doped region of a second conductivity type, disposed under and abutting the first doped region, and electrically isolated within the semiconductor body;
first, second, third, and fourth terminals in electrical contact with the first doped region at separate locations of the surface;
a fifth terminal in electrical contact with the second doped region;
a first current source coupled to the first terminal of the Hall element;
common mode feedback regulation circuitry, having an input coupled to the second and fourth terminals of the Hall element, and an output coupled to the third terminal and a ground node; and
output circuitry coupled to the second and fourth terminals of the Hall element;
wherein the third terminal of the Hall element is coupled to the fifth terminal.
2 . The Hall effect sensor of claim 1 , wherein the common mode feedback regulation circuitry comprises:
a voltage reference circuit, having an output presenting a common mode reference voltage;
a second current source, coupled between the third terminal and the ground node; and
a regulating amplifier, having an input coupled to the second and fourth terminals of the Hall element, an input coupled to the output of the voltage reference circuit, and an output coupled to a control terminal of the second current source.
3 . The Hall effect sensor of claim 1 , wherein the Hall element further comprises:
a buried doped region of the first conductivity type, disposed under and abutting the second doped region; and
a trench isolation structure extending from the surface of the semiconductor body to a depth at least reaching the buried doped region and surrounding the second doped region.
4 . The Hall effect sensor of claim 3 , wherein the Hall element further comprises:
a third doped region of the first conductivity type surrounding the trench isolation structure and extending to a depth at least reaching the buried doped region.
5 . The Hall effect sensor of claim 1 , further comprising:
first, second, third, and fourth shallow well regions of the first conductivity type, and from the surface to a depth in contact with the first doped region;
wherein the first, second, third, and fourth terminals contact surface locations of the first, second, third, and fourth shallow well regions, respectively.
6 . The Hall effect sensor of claim 5 , further comprising:
a fifth shallow well region of the second conductivity type, disposed at boundaries of the first doped region and extending from the surface to a depth in contact with the second doped region;
wherein the fifth terminal contacts at least one surface location of the fifth shallow well region.
7 . The Hall effect sensor of claim 1 , wherein the locations of the surface from which the second and fourth terminals are in electrical contact with the first doped region are not collinear with the locations of the surface from which the first and third terminals are in electrical contact with the first doped region.
8 . The Hall effect sensor of claim 1 , wherein the locations of the surface from which the second and fourth terminals are in electrical contact with the first doped region are collinear with the locations of the surface from which the first and third terminals are in electrical contact with the first doped region.
9 . The Hall effect sensor of claim 1 , further comprising:
a fourth doped region of the second conductivity type disposed at the surface and overlying the first doped region, and in electrical contact with the fifth terminal.
10 . The Hall effect sensor of claim 1 , wherein the first conductivity type is n-type and the second conductivity type is p-type.
11 . A Hall effect sensor comprising:
a Hall element disposed at a surface of a semiconductor body and comprising:
a first doped region of a first conductivity type;
a second doped region of a second conductivity type, disposed under and abutting the first doped region;
a buried doped region of the first conductivity type, disposed under and abutting the second doped region
first, second, third, and fourth terminals in electrical contact with the first doped region;
a fifth terminal in electrical contact with the second doped region;
a trench isolation structure extending from the surface of the semiconductor body to a depth at least reaching the buried doped region and surrounding the second doped region; and
a third doped region of the first conductivity type surrounding the trench isolation structure and extending to a depth at least reaching the buried doped region.
12 . The Hall effect sensor of claim 11 further comprising:
first, second, third, and fourth shallow well regions of the first conductivity type, and from the surface to a depth in contact with the first doped region;
wherein the first, second, third, and fourth terminals contact surface locations of the first, second, third, and fourth shallow well regions, respectively.
13 . The Hall effect sensor of claim 12 further comprising:
a fifth shallow well region of the second conductivity type, disposed at boundaries of the first doped region and extending from the surface to a depth in contact with the second doped region;
wherein the fifth terminal contacts at least one surface location of the fifth shallow well region.
14 . The Hall effect sensor of claim 11 , wherein locations of the surface from which the second and fourth terminals are in electrical contact with the first doped region are not collinear with the locations of the surface from which the first and third terminals are in electrical contact with the first doped region.
15 . The Hall effect sensor of claim 11 , wherein locations of the surface from which the second and fourth terminals are in electrical contact with the first doped region are collinear with the locations of the surface from which the first and third terminals are in electrical contact with the first doped region.
16 . The Hall effect sensor of claim 11 further comprising a fourth doped region of the second conductivity type disposed at the surface and overlying the first doped region, and in electrical contact with the fifth terminal.
17 . The Hall effect sensor of claim 11 , wherein the first conductivity type is opposite to the second conductivity type.
18 . The Hall effect sensor of claim 11 further comprising a sixth terminal in electrical contact with the third doped region, the third terminal configured to receive a bias voltage.
19 . The Hall effect sensor of claim 11 , wherein the third terminal is coupled to the fifth terminal, and the third terminal is lowest potential terminal of the Hall element.
20 . The Hall effect sensor of claim 11 further comprising a feedback circuitry, the feedback circuitry further comprising:
a voltage reference circuit, having an output presenting a reference voltage;
a current source, coupled between the third terminal and a ground node; and
an amplifier, having an input coupled to the second and fourth terminals of the Hall element, an input coupled to the output of the voltage reference circuit, and an output coupled to a control terminal of the current source.