IP Library Granted Patent US 12,116,675
Granted Patent B2
US 12,116,675 · App. 17/418,344 · Granted Oct 15, 2024

Adhesion removal method and film-forming method

Inventors: Yosuke Tanimoto (Tokyo, JP); Shimon Osada (Tokyo, JP)
Assignee: Resonac Corporation
C23C8/08H01L21/02334
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Quick Facts
Patent No.
US 12,116,675
App. No.
17/418,344
Granted
Oct 15, 2024
Kind
B2
Abstract

Provided are an adhesion removal method capable of removing sulfur-containing adhesions that adhere onto the inner surface of a chamber or the inner surface of a pipe connected to the chamber without disassembly of the chamber and a film-forming method. Sulfur-containing adhesions adhering onto at least one of the inner surface of a chamber ( 10 ) and the inner surface of a discharge pipe ( 15 ) connected to the chamber ( 10 ) are removed by reaction with a cleaning gas containing an oxygen-containing compound gas.

Claims (16)

1. A film-forming method comprising:

a passivation step of supplying a passivation gas containing a sulfur-containing compound gas to a chamber in which a substrate is stored and reacting the substrate with the passivation gas to form a passivation film on a surface of the substrate; and

an adhesion removal step of removing a sulfur-containing adhesion adhering onto at least one of an inner surface of the chamber and an inner surface of a pipe connected to the chamber after the passivation step, wherein

the adhesion removal step comprises reacting the sulfur-containing adhesion with a cleaning gas containing an oxygen-containing compound gas, wherein the cleaning gas contains neither a sulfur-containing compound nor a halogen-containing compound.

2. The film-forming method according to claim 1 , wherein the sulfur-containing compound gas is hydrogen sulfide gas.

3. The film-forming method according to claim 1 , wherein the cleaning gas is brought into contact with the adhesion in a condition of a temperature of 20° C. or more and 800° C. or less and a pressure of 20 Pa or more and 101 kPa or less.

4. The film-forming method according to claim 1 , wherein the oxygen-containing compound gas is at least one selected from the group consisting of oxygen gas, nitrogen monoxide, nitrous oxide, and carbon monoxide.

5. The film-forming method according to claim 1 , wherein the oxygen-containing compound gas is oxygen gas.

6. An adhesion removal method comprising:

reacting a sulfur-containing adhesion with a cleaning gas containing an oxygen-containing compound gas, the sulfur-containing adhesion adhering onto at least one of an inner surface of a chamber and an inner surface of a pipe connected to the chamber, thereby removing the sulfur-containing adhesion,

wherein the cleaning gas contains neither a sulfur-containing compound nor a halogen-containing compound.

7. The adhesion removal method according to claim 6 , wherein the oxygen-containing compound gas is at least one selected from the group consisting of oxygen gas, nitrogen monoxide, nitrous oxide, and carbon monoxide.

8. The adhesion removal method according to claim 6 , wherein the oxygen-containing compound gas is oxygen gas.

9. The adhesion removal method according to claim 6 , wherein the cleaning gas is brought into contact with the adhesion in a condition of a temperature of 20° C. or more and 800° C. or less and a pressure of 20 Pa or more and 101 kPa or less.

10. The adhesion removal method according to claim 9 , wherein the oxygen-containing compound gas is at least one selected from the group consisting of oxygen gas, nitrogen monoxide, nitrous oxide, and carbon monoxide.

11. The adhesion removal method according to claim 9 , wherein the oxygen-containing compound gas is oxygen gas.

Assignments (3)
CHANGE OF ADDRESS Recorded Feb 9, 2024
From: RESONAC CORPORATION
To: RESONAC CORPORATION
Reel/Frame 066547/0677 →
CHANGE OF NAME Recorded Jun 23, 2023
From: SHOWA DENKO K.K.
To: RESONAC CORPORATION
Reel/Frame 064082/0513 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 25, 2021
From: TANIMOTO, YOSUKE; OSADA, SHIMON
To: SHOWA DENKO K.K.
Reel/Frame 056671/0541 →