Granted Patent B2

US 12,315,760 · App. 17/435,630 · Granted May 27, 2025

Inventors: Tomoaki Shibata (Tokyo, JP); Tsuyoshi Ogawa (Tokyo, JP); Xinrong Li (Tokyo, JP)

Assignee: RESONAC CORPORATION

H01L21/76817H01L21/76877

Abstract

Claims (26)

1. A method for manufacturing an electronic component device, the method comprising:

forming a via hole extending in a thickness direction of a curable sealing resin layer provided on a base material by an imprint method of pressing a mold into the sealing resin layer from a side opposite to the base material, wherein a semiconductor element is provided on the base material, and the semiconductor element is sealed by the sealing resin layer;

curing the sealing resin layer;

filling the via hole with a conductor precursor; and

forming a conductive via by heating the conductor precursor filled in the via hole, wherein the via hole has a depth of 30 to 500 μm.

2. The method according to claim 1 , wherein a ratio of the depth of the via hole to a maximum width of the via hole is 1 or more.

3. The method according to claim 2 , wherein the ratio of the depth of the via hole to the maximum width of the via hole is 10 or less.

4. The method according to claim 1 , wherein a ratio of the depth of the via hole to a maximum width of the via hole is 2 or more.

5. The method according to claim 4 , wherein the ratio of the depth of the via hole to the maximum width of the via hole is 10 or less.

6. The method according to claim 4 , wherein the maximum width of the via hole is 10 to 200 μm.

7. The method according to claim 1 , wherein the curable sealing resin layer is cured prior to filling the via hole with the conductor precursor.

8. A method for manufacturing an electronic component device, the method comprising:

forming a via hole extending in a thickness direction of a curable sealing resin layer provided on a base material by an imprint method of pressing a mold into the sealing resin layer from a side opposite to the base material, wherein a semiconductor element is provided on the base material, and the semiconductor element is sealed by the sealing resin layer;

curing the sealing resin layer;

filling the via hole with a conductor precursor, wherein the conductor precursor comprises a plurality of metallic particles and an organic binder in which the plurality of metallic particles are dispersed; and

forming a conductive via by heating the conductor precursor filled in the via hole, wherein the via hole has a depth of 30 to 500 μm, wherein when the conductor precursor is heated, the plurality of metallic particles form a metallic sintered body through transitional liquid phase sintering, thereby forming the conductive via comprising the metallic sintered body.

9. A method for manufacturing an electronic component device, the method comprising:

forming a via hole extending in a thickness direction of a curable sealing resin layer provided on a base material by an imprint method of pressing a mold into the sealing resin layer from a side opposite to the base material;

curing the sealing resin layer;

filling the via hole with a conductor precursor, wherein the conductor precursor comprises a plurality of metallic particles and an organic binder in which the plurality of metallic particles are dispersed, and the organic binder comprises a thermoplastic resin having a polyoxyalkylene group or a polysiloxane group; and

forming a conductive via by heating the conductor precursor filled in the via hole, wherein the via hole has a depth of 30 to 500 μm.

10. A method for manufacturing an electronic component device, the method comprising:

forming a via hole extending in a thickness direction of a curable sealing resin layer provided on a base material by an imprint method of pressing a mold into the sealing resin layer from a side opposite to the base material;

filling the via hole with a conductor precursor;

curing the sealing resin layer, wherein the sealing resin layer is cured after filling the via hole with the conductor precursor; and

forming a conductive via by heating the conductor precursor filled in the via hole, wherein the via hole has a depth of 30 to 500 μm.

Assignments (3)

Priority Claims (1)

Continuity (1)

References Cited (15)