Bonding apparatus and bonding method
The present invention includes: a position detection unit ( 55 ) detecting positions of semiconductor chips and storing each detected position in a position database ( 56 ); a position correction unit ( 57 ) outputting a corrected bonding position; and a bonding control unit ( 58 ) performing bonding of the semiconductor chips based on the corrected bonding position input from the position correction unit ( 57 ). The position correction unit ( 57 ) calculates position shift amounts between the semiconductor chips of respective stages and an accumulated position shift amount, and when the accumulated position shift amount is greater than or equal to a predetermined threshold value, corrects the position of the semiconductor chip by the accumulated position shift amount and outputs it as the corrected bonding position, and the bonding control unit ( 58 ) performs bonding of the semiconductor chip of the next stage at the corrected bonding position input from the position correction unit.
1. A bonding apparatus for laminating and bonding a plurality of semiconductor chips respectively onto a plurality of bonding regions of a base member, the bonding apparatus comprising:
a position detection unit detecting each position of each of the bonding regions of the base member and each position of the semiconductor chip of each stage laminated and bonded onto each of the bonding regions of the base member, and storing data of each position detected in a position database for each of the bonding regions of the base member;
a position correction unit correcting a bonding position with reference to the position database, and outputting a corrected bonding position; and
a bonding control unit performing bonding of the semiconductor chip based on the corrected bonding position input from the position correction unit,
wherein the position correction unit:
calculates a position shift amount between a position of each of the bonding regions of the base member and a position of the semiconductor chip bonded thereon, or a position shift amount between a position of the semiconductor chip of an N−1 st stage and a position of the semiconductor chip of an N th stage bonded directly on the semiconductor chip of the N−1 st stage, and stores each of calculated position shift amounts in the position database for each of the bonding regions of the base member,
accumulates the position shift amounts from the base member to the semiconductor chip of the N th stage when laminating and bonding the semiconductor chips to obtain an accumulated position shift amount, and
corrects the position of the semiconductor chip of the N th stage by the accumulated position shift amount when the accumulated position shift amount is greater than or equal to a predetermined threshold value, and outputs the position corrected as the corrected bonding position, and
the bonding control unit performs bonding of the semiconductor chip of a next stage at the corrected bonding position input from the position correction unit.
2. The bonding apparatus according to claim 1 , wherein the position correction unit corrects the position of the semiconductor chip of the N th stage by each position shift amount of the N th stage when the accumulated position shift amount is less than the predetermined threshold value, and outputs the position corrected as the bonding position of the next stage.
3. The bonding apparatus according to claim 1 , wherein the position correction unit outputs a stop command for stopping a bonding operation to the bonding control unit when the accumulated position shift amount is greater than or equal to a predetermined stop threshold value, and
the bonding control unit stops the bonding operation when the stop command is input from the position correction unit.
4. The bonding apparatus according to claim 1 , wherein when bonding is stopped in a state of laminating and bonding to an intermediate stage and the base member is taken out, and then the base member is set again,
the position correction unit accumulates each position shift amount from the base member to the semiconductor chip of the intermediate stage with reference to the position database, and calculates an intermediate accumulated position shift amount, and
corrects each position of the semiconductor chip of the stage bonded immediately before bonding is stopped by the intermediate accumulated position shift amount calculated, and outputs the position corrected as the corrected bonding position.
5. The bonding apparatus according to claim 1 , wherein a plurality of dummy chips are respectively laminated and bonded onto each of the bonding regions of the base-member,
the position detection unit detects each position of each of the bonding regions of the base member and each position of the dummy chip of each stage laminated and bonded onto each of the bonding regions of the base member, and stores data of each position detected in the position database for each of the bonding regions of the base member,
the position correction unit calculates a position shift amount between a position of each of the bonding regions of the base member and a position of the dummy chip bonded thereon, or a position shift amount between a position of the dummy chip bonded and a position of the dummy chip bonded directly thereon, and stores each position shift amount calculated in the position database for each of the bonding regions of the base member, and
corrects a bonding position of each stage when the semiconductor chip is laminated and bonded based on the position database.
6. A bonding method for laminating and bonding a plurality of semiconductor chips respectively onto a plurality of bonding regions of a base member, the bonding method comprising:
a position detection step of detecting each position of each of the bonding regions of the base member and each position of the semiconductor chip of each stage laminated and bonded onto each of the bonding regions of the base member, and storing data of each position detected in a position database for each of the bonding regions of the base member;
a position shift amount calculation step of calculating a position shift amount between a position of each of the bonding regions of the base member and a position of the semiconductor chip bonded thereon, or a position shift amount between a position of the semiconductor chip of an N−1 st stage and a position of the semiconductor chip of an N th stage bonded directly on the semiconductor chip of the N−1 st stage, and storing each of calculated position shift amounts in the position database for each of the bonding regions of the base member;
an accumulated position shift amount calculation step of accumulating the position shift amounts from the base member to the semiconductor chip of the N th stage when laminating and bonding the semiconductor chips to obtain an accumulated position shift amount;
a position correction step of correcting the position of the semiconductor chip of the N th stage by the accumulated position shift amount when the accumulated position shift amount is greater than or equal to a predetermined threshold value, and using the position corrected as a bonding position of a next stage; and
a bonding step of laminating and bonding the semiconductor chip of the next stage at a corrected bonding position.
7. The bonding method according to claim 6 , wherein the position correction step corrects the position of the semiconductor chip of the N th stage by each position shift amount of the N th stage calculated in the position shift amount calculation step when the accumulated position shift amount is less than the predetermined threshold value, and uses the position corrected as the bonding position of the next stage.
8. The bonding method according to claim 6 , comprising a bonding stop step of stopping a bonding operation when the accumulated position shift amount is greater than or equal to a predetermined stop threshold value.
9. The bonding apparatus according to claim 2 , wherein the position correction unit outputs a stop command for stopping a bonding operation to the bonding control unit when the accumulated position shift amount is greater than or equal to a predetermined stop threshold value, and
the bonding control unit stops the bonding operation when the stop command is input from the position correction unit.
10. The bonding apparatus according to claim 2 , wherein when bonding is stopped in a state of laminating and bonding to an intermediate stage and the base member is taken out, and then the base member is set again,
the position correction unit accumulates each position shift amount from the base member to the semiconductor chip of the intermediate stage with reference to the position database, and calculates an intermediate accumulated position shift amount, and
corrects each position of the semiconductor chip of the stage bonded immediately before bonding is stopped by the intermediate accumulated position shift amount calculated, and outputs the position corrected as the corrected bonding position.
11. The bonding apparatus according to claim 2 , wherein a plurality of dummy chips are respectively laminated and bonded onto each of the bonding regions of the base member,
the position detection unit detects each position of each of the bonding regions of the base member and each position of the dummy chip of each stage laminated and bonded onto each of the bonding regions of the base member, and stores data of each position detected in the position database for each of the bonding regions of the base member,
the position correction unit calculates a position shift amount between a position of each of the bonding regions of the base member and a position of the dummy chip bonded thereon, or a position shift amount between a position of the dummy chip bonded and a position of the dummy chip bonded directly thereon, and stores each position shift amount calculated in the position database for each of the bonding regions of the base member, and
corrects a bonding position of each stage when the semiconductor chip is laminated and bonded based on the position database.
12. The bonding method according to claim 7 , comprising a bonding stop step of stopping a bonding operation when the accumulated position shift amount is greater than or equal to a predetermined stop threshold value.