IP Library › Granted Patent US 11,982,631
Granted Patent B2
US 11,982,631 · App. 17/437,528 · Granted May 14, 2024

Defect detection device, defect detection method, and defect observation apparatus including defect detection device

Inventors: Yuko Otani (Tokyo, JP); Kazuo Aoki (Tokyo, JP); Shunichi Matsumoto (Tokyo, JP); Yuta Urano (Tokyo, JP)
Assignee: HITACHI HIGH-TECH CORPORATION
G01N21/9501G01N21/8806G01N21/8851G02B3/0006G02B5/20
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 11,982,631
App. No.
17/437,528
Granted
May 14, 2024
Kind
B2
Abstract

A defect detection device including an illumination optical system, an image capturing optical system configured to capture an image of scattered light generated by the illumination optical system irradiating the wafer, and an image processing unit configured to process a picture of the image of the scattered light to extract a defect on the wafer. The image capturing optical system includes an objective lens, a filter unit configured to shield a part of light transmitted through the objective lens, and an imaging lens configured to form an image of light transmitted through the filter unit. The filter unit includes a first microlens array configured to condense parallel light transmitted through the objective lens, a shutter array including a light transmission unit at a focus position of the first microlens array, and a second microlens array disposed opposite to the first microlens array with respect to the shutter array.

Claims (62)

1. A defect detection device comprising:

an illumination optical system configured to irradiate a wafer with light;

an image capturing optical system configured to capture an image of scattered light generated on the wafer irradiated with light by the illumination optical system; and

an image processing unit configured to process a picture of the image of the scattered light obtained by capturing by the image capturing optical system to extract a defect on the wafer, wherein

the image capturing optical system includes

an objective lens,

a filter unit configured to shield a part of light transmitted through the objective lens, and

an imaging lens configured to form an image of light transmitted through the filter unit on an image capturing device, and

the filter unit includes

a first microlens array configured to condense parallel light transmitted through the objective lens,

a shutter array including a light transmission unit at a focus position of the first microlens array, and

a second microlens array disposed on a side opposite to the first microlens array with respect to the shutter array,

wherein the first microlens array and the second microlens array are arranged such that the first microlens array is disposed at a first focus length with respect to the shutter array, and the second microlens array is disposed at a second focus length with respect to the shutter array, and

wherein the first focus length is equal to or greater than the second focus length.

2. The defect detection device according to claim 1 , wherein

a focus length of a lens constituting the second microlens array of the filter unit is smaller than a focus length of a lens constituting the first microlens array.

3. The defect detection device according to claim 1 , wherein

the filter unit is disposed on a pupil plane of the objective lens of the image capturing optical system.

4. The defect detection device according to claim 1 , wherein

the shutter array of the filter unit is formed of a liquid crystal device.

5. The defect detection device according to claim 1 , wherein

the shutter array of the filter unit is formed of a MEMS including a shutter that is opened and closed based on an electric signal.

6. The defect detection device according to claim 1 , further comprising:

a control unit, wherein

the control unit controls the shutter array of the filter unit to change a light shielding pattern that partially shields light transmitted through the shutter array according to a type of a defect on the wafer to be extracted.

7. A defect detection method comprising:

irradiating a wafer with light by an illumination optical system;

capturing, by an image capturing optical system, an image of scattered light generated on the wafer irradiated with light by the illumination optical system; and

processing, with an image processing unit, a picture of the image of the scattered light obtained by capturing by the image capturing optical system to extract a defect on the wafer, wherein

the capturing the image of the scattered light by the imaging optical system is executed by causing light transmitted through an objective lens of the image capturing optical system to be incident on a filter unit and causing light transmitted through the filter unit to form an image on an image capturing device by an imaging lens, and

the light transmitted through the filter unit is light that parallel light transmitted through the objective lens is condensed by a first microlens array, and in the light condensed by the first microlens array, the light transmitted through a shutter array including a light transmission unit at a focus position of the first microlens array and is made into parallel light by a second microlens array,

wherein the first microlens array and the second microlens array are arranged such that the first microlens array is disposed at a first focus length with respect to the shutter array, and the second microlens array is disposed at a second focus length with respect to the shutter array, and

wherein the first focus length is equal to or greater than the second focus length.

8. The defect detection method according to claim 7 , wherein

the shutter array of the filter unit is formed of a liquid crystal device.

9. The defect detection method according to claim 7 , wherein

the shutter array of the filter unit is formed of a MEMS including a shutter that is opened and closed based on an electric signal.

10. The defect detection method according to claim 7 , wherein

a control unit controls the shutter array of the filter unit to change a light shielding pattern that partially shields light transmitted through the shutter array according to a type of a defect on the wafer to be extracted.

11. A defect observation apparatus comprising:

an optical microscope unit;

a scanning electron microscope unit;

a stage unit on which a sample is placed and which is configured to move between the optical microscope unit and the scanning electron microscope unit; and

a control system unit configured to control the optical microscope unit, the scanning electron microscope unit, and the stage unit, wherein

the optical microscope unit includes

an illumination optical system configured to irradiate a wafer with light,

an image capturing optical system configured to capture an image of scattered light generated on the wafer irradiated with light by the illumination optical system, and

an image processing unit configured to process a picture of the image of the scattered light obtained by capturing by the image capturing optical system to extract a defect on the wafer,

the imaging optical system includes

an objective lens,

a filter unit configured to shield a part of light transmitted through the objective lens, and

an imaging lens configured to form an image of light transmitted through the filter unit on an image capturing device, and

the filter unit includes

a first microlens array configured to condense parallel light transmitted through the objective lens,

a shutter array including a light transmission unit at a focus position of the first microlens array, and

a second microlens array disposed on a side opposite to the first microlens array with respect to the shutter array,

wherein the first microlens array and the second microlens array are arranged such that the first microlens array is disposed at a first focus length with respect to the shutter array, and the second microlens array is disposed at a second focus length with respect to the shutter array, and

wherein the first focus length is equal to or greater than the second focus length.

12. The defect observation apparatus according to claim 11 , wherein

a focus position of the lens constituting the first microlens array and a focus position of the lens constituting the second microlens array are both set in the light transmission unit of the shutter array.

13. The defect observation apparatus according to claim 11 , wherein

the shutter array of the filter unit is formed of a liquid crystal device or a MEMS including a shutter that is opened and closed based on an electric signal.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 9, 2021
From: OTANI, YUKO; AOKI, KAZUO; MATSUMOTO, SHUNICHI; URANO, YUTA
To: HITACHI HIGH-TECH CORPORATION
Reel/Frame 057427/0369 →
Continuity (1)
Related Publication 20220155240A1 · May 19, 2022