Light receiving element, method of manufacturing light receiving element, and imaging apparatus

1. A light receiving element comprising:

a semiconductor layer including a compound semiconductor material;

a first impurity diffusion region provided on one surface of the semiconductor layer;

a second impurity diffusion region provided around the first impurity diffusion region, the second impurity diffusion region having a lower impurity concentration than an impurity concentration of the first impurity diffusion region;

a first electrode provided on the one surface side of the semiconductor layer, the first electrode being electrically coupled to the semiconductor layer; and

a second electrode opposed to the first electrode with the semiconductor layer interposed between the second electrode and the first electrode, wherein

the semiconductor layer has a groove in the first impurity diffusion region, and

a portion of the first electrode is embedded and provided in the groove.

2. The light receiving element according to claim 1 , wherein the first impurity diffusion region has a diffusion shape with an inflection point.

3. The light receiving element according to claim 1 , wherein the first impurity diffusion region includes a convex section that penetrates the second impurity diffusion region.

4. A light receiving element comprising:

a semiconductor layer including a compound semiconductor material;

a first impurity diffusion region provided on one surface of the semiconductor layer; and

a second impurity diffusion region provided around the first impurity diffusion region, the second impurity diffusion region having a lower impurity concentration than an impurity concentration of the first impurity diffusion region, wherein

the semiconductor layer includes a first semiconductor layer and a second semiconductor layer that are stacked in order from the one surface side, the first semiconductor layer and the second semiconductor layer having different electrical conduction types or including different materials,

the first impurity diffusion region and the second impurity diffusion region are provided to the first semiconductor layer,

the first impurity diffusion region includes a convex section that penetrates the second impurity diffusion region, and

the convex section is formed in the first semiconductor layer.

5. A light receiving element comprising:

a semiconductor layer including a compound semiconductor material;

a first impurity diffusion region provided on one surface of the semiconductor layer; and

a second impurity diffusion region provided around the first impurity diffusion region, the second impurity diffusion region having a lower impurity concentration than an impurity concentration of the first impurity diffusion region, wherein

the semiconductor layer includes a first semiconductor layer and a second semiconductor layer that are stacked in order from the one surface side, the first semiconductor layer and the second semiconductor layer having different electrical conduction types or including different materials,

the first impurity diffusion region and the second impurity diffusion region are provided to the first semiconductor layer,

the first impurity diffusion region includes a convex section that penetrates the second impurity diffusion region, and

a portion of the convex section protrudes into the second semiconductor layer.

6. A light receiving element comprising:

a semiconductor layer including a compound semiconductor material;

a first impurity diffusion region provided on one surface of the semiconductor layer; and

a second impurity diffusion region provided around the first impurity diffusion region, the second impurity diffusion region having a lower impurity concentration than an impurity concentration of the first impurity diffusion region, wherein zinc (Zn) is diffused in the first impurity diffusion region and the second impurity diffusion region.

7. The light receiving element according to claim 1 , wherein the compound semiconductor material absorbs light having a wavelength in an infrared region.

8. The light receiving element according to claim 1 , wherein the compound semiconductor material includes a III-V group semiconductor.

9. The light receiving element according to claim 1 , wherein the compound semiconductor material includes any one of InGaAs, InAsSb, InAs, InSb, and HgCdTe.

10. The light receiving element according to claim 1 , wherein the semiconductor layer has a multi quantum well structure.

11. An imaging apparatus comprising

an element region in which a plurality of light receiving elements is disposed in an array, wherein

the light receiving elements each include

a semiconductor layer including a compound semiconductor material,

a first impurity diffusion region provided on one surface of the semiconductor layer, and

a second impurity diffusion region provided around the first impurity diffusion region, the second impurity diffusion region having a lower impurity concentration than an impurity concentration of the first impurity diffusion region;

a first electrode provided on the one surface side of the semiconductor layer, the first electrode being electrically coupled to the semiconductor layer; and

a second electrode opposed to the first electrode with the semiconductor layer interposed between the second electrode and the first electrode, wherein

the semiconductor layer has a groove in the first impurity diffusion region, and

a portion of the first electrode is embedded and provided in the groove.

12. A method of manufacturing a light receiving element, the method comprising:

forming a semiconductor layer including a compound semiconductor material;

forming a mask layer having an opening on one surface of the semiconductor layer;

forming a first impurity diffusion region on the one surface of the semiconductor layer by diffusing an impurity through the opening; and

forming a second impurity diffusion region around the first impurity diffusion region through annealing treatment, the second impurity diffusion region having a lower impurity concentration than an impurity concentration of the first impurity diffusion region, wherein

a sidewall is formed in the opening,

a groove is formed in the first impurity diffusion region by etching, and

the first impurity diffusion region is formed into a diffusion shape by diffusing an impurity again in the first impurity diffusion region through the groove after the annealing treatment, the diffusion shape having an inflection point.

13. The method of manufacturing the light receiving element according to claim 12 , wherein a metal material is embedded and provided in the groove to form a first electrode, the first electrode being electrically coupled to the light receiving element.

14. An imaging apparatus comprising

an element region in which a plurality of light receiving elements is disposed in an array, wherein

the light receiving elements each include

a semiconductor layer including a compound semiconductor material,

a first impurity diffusion region provided on one surface of the semiconductor layer, and

a second impurity diffusion region provided around the first impurity diffusion region, the second impurity diffusion region having a lower impurity concentration than an impurity concentration of the first impurity diffusion region, wherein

the semiconductor layer includes a first semiconductor layer and a second semiconductor layer that are stacked in order from the one surface side, the first semiconductor layer and the second semiconductor layer having different electrical conduction types or including different materials,

the first impurity diffusion region and the second impurity diffusion region are provided to the first semiconductor layer,

the first impurity diffusion region includes a convex section that penetrates the second impurity diffusion region, and

the convex section is formed in the first semiconductor layer.

15. An imaging apparatus comprising

an element region in which a plurality of light receiving elements is disposed in an array, wherein

the light receiving elements each include

a semiconductor layer including a compound semiconductor material,

a first impurity diffusion region provided on one surface of the semiconductor layer, and

a second impurity diffusion region provided around the first impurity diffusion region, the second impurity diffusion region having a lower impurity concentration than an impurity concentration of the first impurity diffusion region, wherein

the semiconductor layer includes a first semiconductor layer and a second semiconductor layer that are stacked in order from the one surface side, the first semiconductor layer and the second semiconductor layer having different electrical conduction types or including different materials,

the first impurity diffusion region and the second impurity diffusion region are provided to the first semiconductor layer,

the first impurity diffusion region includes a convex section that penetrates the second impurity diffusion region, and

a portion of the convex section protrudes into the second semiconductor layer.

16. An imaging apparatus comprising

an element region in which a plurality of light receiving elements is disposed in an array, wherein

the light receiving elements each include

a semiconductor layer including a compound semiconductor material,

a first impurity diffusion region provided on one surface of the semiconductor layer, and

a second impurity diffusion region provided around the first impurity diffusion region, the second impurity diffusion region having a lower impurity concentration than an impurity concentration of the first impurity diffusion region, and

wherein zinc (Zn) is diffused in the first impurity diffusion region and the second impurity diffusion region.