Granted Patent B2

US 12,660,359 · App. 18/795,396 · Granted Jun 16, 2026

Inventor: Toshiyuki Ogawa (Chiba, JP)

Assignee: Canon Kabushiki Kaisha

H10F39/811H10F39/011H10F71/00H10F77/93

Abstract

Claims (51)

1 . A photoelectric conversion device in which a first substrate and a second substrate are bonded to each other, the first substrate including a first semiconductor layer comprising light receiving elements, and the second substrate including a second semiconductor layer comprising a circuit element for processing a signal generated by the light receiving elements, the photoelectric conversion device comprising:

an electrode pad for external connection; and

an opening extending to the electrode pad,

wherein the first substrate includes a plurality of conductive patterns located between the first semiconductor layer and the boundary between the first semiconductor layer and the second semiconductor layer,

wherein the plurality of conductive patterns includes a first conductive pattern and a second conductive pattern that is more distant from the boundary than the first conductive pattern,

wherein each of the conductive patterns includes a plurality of wiring members that are used to drive the photoelectric conversion device and a plurality of dummy members that are not used to drive the photoelectric conversion device,

wherein the plurality of dummy members in each of the plurality of conductive patterns includes a dummy member located on an outer side relative to the opening in a plan view relative to the boundary, and

wherein the plurality of dummy members in the second conductive pattern includes a dummy member not connected to a via.

2 . The photoelectric conversion device according to claim 1 ,

wherein the first substrate includes a plurality of dummy electrodes that face the boundary and are not used to drive the photoelectric conversion device, and

wherein the plurality of conductive patterns included in the first substrate includes (a) a first conductive pattern, (b) a second conductive pattern that is more distant from the boundary than the first conductive pattern, and (c) a third conductive pattern that is more distant from the boundary than the second conductive pattern.

3 . The photoelectric conversion device according to claim 2 , wherein an arrangement pitch between the plurality of dummy electrodes is larger than an arrangement pitch between the plurality of dummy members in the first conductive pattern.

4 . The photoelectric conversion device according to claim 2 , wherein an arrangement pitch between the plurality of dummy electrodes is larger than an arrangement pitch between the plurality of dummy members in the third conductive pattern.

5 . The photoelectric conversion device according to claim 2 , wherein an arrangement pitch between the plurality of dummy members in the first conductive pattern is larger than an arrangement pitch between the plurality of dummy members in the third conductive pattern.

6 . The photoelectric conversion device according to claim 2 , wherein an arrangement pitch between the plurality of dummy members in the second conductive pattern is equal to an arrangement pitch between the plurality of dummy members in the third conductive pattern.

7 . The photoelectric conversion device according to claim 2 , wherein an arrangement pitch between the plurality of dummy electrodes is larger than an arrangement pitch between the plurality of dummy members in the first conductive pattern, and

wherein an arrangement pitch between the plurality of dummy members in the first conductive pattern is larger than an arrangement pitch between the plurality of dummy members in the second conductive pattern.

8 . The photoelectric conversion device according to claim 2 , wherein one dummy electrode of the plurality of dummy electrodes has an area larger than an area of one dummy member of the plurality of dummy members in the first conductive pattern in a plan view relative to the boundary.

9 . The photoelectric conversion device according to claim 2 , wherein the plurality of dummy members in the first conductive pattern includes a dummy member that entirely overlaps one of the plurality of dummy electrodes, and a dummy member that does not overlap any one of the plurality of dummy electrodes in a plan view relative to the boundary.

10 . The photoelectric conversion device according to claim 2 , wherein an area density of the plurality of dummy members in the first conductive pattern is smaller than an area density of the plurality of dummy members in the second conductive pattern or the third conductive pattern in a plan view relative to the boundary.

11 . The photoelectric conversion device according to claim 1 , wherein the plurality of dummy members includes a dummy member located on an inner side relative to the opening in a plan view relative to the boundary.

12 . The photoelectric conversion device according to claim 1 , wherein the conductive pattern is made using aluminum as a material.

13 . The photoelectric conversion device according to claim 1 , wherein the light receiving elements are single photon avalanche diode sensors.

14 . The photoelectric conversion device according to claim 1 , wherein the plurality of wiring members includes a first wiring member connected to an anode of the light receiving elements and a second wiring member connected to a cathode of the light receiving elements,

wherein a spacing between the first wiring member and the second wiring member is less than or equal to an arrangement pitch between the light receiving elements, and

wherein a dummy member that is not used to drive the photoelectric conversion device is not included between the first wiring member and the second wiring member.

15 . The photoelectric conversion device according to claim 1 , wherein the plurality of dummy members includes a dummy member that has a circular shape in a plan view relative to the boundary.

16 . The photoelectric conversion device according to claim 1 , wherein the plurality of dummy members includes a dummy member that has a polygonal shape with all apexes defining an obtuse angle in a plan view relative to the boundary.

17 . The photoelectric conversion device according to claim 1 , wherein the plurality of dummy members includes a dummy member that has a width less than or equal to half an arrangement pitch between the light receiving elements.

18 . The photoelectric conversion device according to claim 1 , wherein an arrangement pitch between the plurality of dummy members is smaller than an arrangement pitch between the light receiving elements.

19 . The photoelectric conversion device according to claim 1 , wherein an area density of the plurality of dummy members is different from an area density of the plurality of wiring members in a plan view relative to the boundary.

20 . An appliance comprising:

the photoelectric conversion device according to claim 1 ; and

at least one of the following devices:

an optical device for the photoelectric conversion device;

a control device configured to control the photoelectric conversion device;

a processing device configured to process a signal output from the photoelectric conversion device;

a display device configured to display information obtained by the photoelectric conversion device;

a storage device configured to store information obtained by the photoelectric conversion device; and

a mechanical device configured to operate based on information obtained by the photoelectric conversion device.

21 . A method for producing a photoelectric conversion device, the method comprising:

preparing a first substrate and a second substrate, the first substrate including a first semiconductor layer having light receiving elements, and the second substrate including a second semiconductor layer having a circuit element for processing a signal generated by the light receiving elements;

bonding the first substrate and the second substrate to each other;

forming an opening for external connection that extends to an electrode pad; and

dicing the first substrate and the second substrate along a dicing line,

wherein the first substrate prepared includes a plurality of conductive patterns located between the first semiconductor layer and a boundary between the first semiconductor layer and the second semiconductor layer,

wherein the plurality of conductive patterns includes a first conductive pattern and a second conductive pattern that is more distant from the boundary than the first conductive pattern,

wherein each of the conductive patterns includes a plurality of wiring members that are used to drive the photoelectric conversion device and a plurality of dummy members that are not used to drive the photoelectric conversion device,

wherein the plurality of dummy members in each of the plurality of conductive patterns includes a dummy member located on an outer side relative to the opening in a plan view relative to the boundary, and

wherein the plurality of dummy members in the second conductive pattern includes a dummy member not connected to a via.

22 . The production method according to claim 21 , further comprising, prior to dicing the first substrate and the second substrate, forming a groove along the dicing line by performing processing that uses heat.

Priority Claims (1)

Continuity (2)

References Cited (49)