Display device including a frame-like shape oxide semiconductor layer
An aspect of the disclosure, in a non-display region, an oxide semiconductor layer is provided in a frame-like shape along a peripheral edge of a through hole, a first opening is provided in a first inorganic insulating film so as to surround the through hole in a plan view and expose the oxide semiconductor layer in the non-display region, a common functional layer is provided so as to extend from a display region to the non-display region, a second opening is provided in a frame-like shape so as to surround the through hole in a plan view and expose the oxide semiconductor layer in the common functional layer, and a second inorganic insulating film is in contact with the oxide semiconductor layer via the second opening.
1. A display device comprising:
a resin substrate;
a thin film transistor layer provided on the resin substrate and including a first inorganic insulating film;
a light-emitting element layer provided on the thin film transistor layer and including a plurality of light-emitting elements arranged corresponding to a plurality of subpixels of a display region; and
a sealing film provided on the light-emitting element layer to cover the plurality of light-emitting elements and including a second inorganic insulating film, wherein
a frame region is provided around the display region,
a non-display region is provided in an island shape within the display region,
a through hole penetrating in a thickness direction of the resin substrate is provided in the non-display region,
a first electrode, a functional layer, and a second electrode are sequentially layered in each of the plurality of light-emitting elements,
the functional layer includes a common functional layer provided in common to the plurality of subpixels,
an oxide semiconductor layer is provided in a frame-like shape along a peripheral edge of the through hole in the non-display region,
a first opening is provided in the first inorganic insulating film to surround the through hole in a plan view and to expose the oxide semiconductor layer in the non-display region,
the common functional layer is provided to extend from the display region to the non-display region,
a second opening is provided in a frame-like shape to surround the through hole in the plan view and to expose the oxide semiconductor layer in the common functional layer, and
the second inorganic insulating film is in contact with the oxide semiconductor layer via the second opening.
2. The display device according to claim 1 ,
wherein the oxide semiconductor layer is provided along a boundary between the display region and the non-display region.
3. The display device according to claim 1 ,
wherein a peripheral end portion of the oxide semiconductor layer on a side of the through hole is provided along a peripheral edge of the through hole.
4. The display device according to claim 3 ,
wherein the second opening is provided to extend to the peripheral edge of the through hole.
5. The display device according to claim 1 ,
wherein the second inorganic insulating film includes a lower second inorganic insulating film provided on a side of the resin substrate, and an upper second inorganic insulating film provided on a side opposite the resin substrate,
the sealing film further includes an organic insulating film provided between the lower second inorganic insulating film and the upper second inorganic insulating film, and
an external dam wall is provided in a frame-like shape in the frame region to surround the display region and to overlap with an outer peripheral end portion of the organic insulating film in the plan view.
6. The display device according to claim 5 ,
wherein an internal dam wall is provided in a frame-like shape in the non-display region to overlap with an inner peripheral end portion of the organic insulating film.
7. The display device according to claim 6 ,
wherein the internal dam wall is provided to surround the oxide semiconductor layer in the plan view.
8. The display device according to claim 6 ,
wherein a plurality of first photospacers and a plurality of second photospacers are provided in an island shape in the display region and the frame region, respectively, and
a plurality of third photospacers is provided in an island shape on a side of the display region of the internal dam wall.
9. The display device according to claim 1 ,
wherein a peripheral portion of the first inorganic insulating film on a side of the first opening is provided to cover an outer peripheral end portion of the oxide semiconductor layer.
10. The display device according to claim 1 ,
wherein a resin layer is provided between the first opening and the through hole in a frame-like shape to surround the through hole in the plan view.
11. The display device according to claim 10 ,
wherein the second inorganic insulating film is provided to surround the resin layer in the plan view.
12. The display device according to claim 10 ,
wherein a plurality of fourth photospacers is provided in an island shape on the resin layer.
13. The display device according to claim 10 ,
wherein a layered thick film portion is provided between the first opening and the through hole in a frame-like shape to surround the through hole in the plan view.
14. The display device according to claim 1 ,
wherein a third opening is provided in the second electrode, a peripheral end of the third opening coinciding with a peripheral end of the second opening.
15. The display device according to claim 1 ,
wherein the second inorganic insulating film is provided to surround the through hole in the plan view.
16. The display device according to claim 1 ,
wherein the thin film transistor layer further includes a plurality of thin film transistors provided corresponding to the plurality of subpixels, and
the oxide semiconductor layer and semiconductor layers constituting the plurality of thin film transistors are formed into an identical layer using an identical material.
17. The display device according to claim 1 ,
wherein the thin film transistor layer further includes a gate insulating film provided as the first inorganic insulating film, and
a peripheral end portion of the oxide semiconductor layer is covered by the gate insulating film.