Semiconductor die with sensor section located at the edge
A semiconductor die is proposed, wherein the semiconductor die comprises a microelectronic section and a sensor section. The microelectronic section comprises an integrated circuit. The sensor section adjoins an edge of the semiconductor die. A sensor is also proposed, which comprises such a semiconductor die.
1. A semiconductor die comprising:
a microelectronic section,
wherein the microelectronic section comprises an integrated circuit; and
a sensor section,
wherein a first side of the sensor section adjoins an edge of the semiconductor die,
wherein a step formed by a plurality of metallization layers of the microelectronic section is present only on a second side of the sensor section that is opposite of the first side of the sensor section,
wherein the sensor section is configured to be positioned above a mounting surface of a housing,
wherein the sensor section is free of any wetting by an adhesive that mechanically connects the semiconductor die to the mounting surface of the housing, and
wherein a barrier prevents a mechanical connection from being produced between the sensor section and the mounting surface of the housing when the semiconductor die is mounted on the mounting surface of the housing.
2. The semiconductor die as claimed in claim 1 , wherein the sensor section comprises one or more of:
a magnetic sensor element,
an acceleration sensor element,
an ultrasonic transducer element, or
an acoustic transducer element.
3. The semiconductor die as claimed in claim 1 , wherein the sensor section comprises a movable region.
4. The semiconductor die as claimed in claim 1 , further comprising:
a die-contacting surface associated with the microelectronic section.
5. The semiconductor die as claimed in claim 4 , wherein the die-contacting surface is located on a side of the microelectronic section facing away from the sensor section.
6. The semiconductor die as claimed in claim 1 , wherein the sensor section is free of a metallic interconnection layer.
7. The semiconductor die as claimed in claim 1 , wherein the semiconductor die has a rectangular shape in a plan view, and
wherein the semiconductor die is divided by a plane into a rectangular microelectronic section in the plan view and a rectangular sensor section in the plan view.
8. The semiconductor die as claimed in claim 2 , wherein the semiconductor die includes a pressure sensor element, and wherein the pressure sensor element comprises a capacitive pressure sensor element.
9. The semiconductor die as claimed in claim 2 , wherein the semiconductor die includes the magnetic sensor element, and wherein the magnetic sensor element comprises a Hall-type sensor element.
10. A sensor comprising:
a semiconductor die comprising:
a microelectronic section that comprises an integrated circuit; and
a sensor section, wherein a first side of the sensor section adjoins an edge of the semiconductor die, and wherein a step formed by a plurality of metallization layers of the microelectronic section is present only on a second side of the sensor section that is opposite of the first side of the sensor section;
a housing, wherein the housing comprises:
a mounting surface,
a contact terminal, and
a housing contacting surface electrically conductively connected to the contact terminal; and
a bonding wire,
wherein bonding wire electrically conductively connects a die-contacting surface to the housing contacting surface,
wherein the die-contacting surface is located on a side of the microelectronic section facing away from the sensor section,
wherein the sensor section is configured to be positioned above the mounting surface,
wherein the sensor section is free of any wetting by an adhesive that mechanically connects the semiconductor die to the mounting surface, and
wherein a barrier prevents a mechanical connection from being produced between the sensor section and the mounting surface when the semiconductor die is mounted on the mounting surface.
11. The sensor as claimed in claim 10 , wherein the sensor section of the semiconductor die is covered with a gel.
12. The sensor as claimed in claim 10 , wherein one or more of the die-contacting surface, the bonding wire, or the housing contacting surface are embedded in an encapsulation.
13. The sensor as claimed in claim 12 , wherein the encapsulation is manufactured by film assisted molding.
14. The sensor as claimed in claim 12 , wherein the sensor section of the semiconductor die is covered with a gel, and
wherein a stopper is included on the side of the semiconductor die facing away from the mounting surface, wherein the stopper prevents wetting of the sensor section by a material of the encapsulation.
15. The sensor as claimed in claim 10 , wherein the barrier is included on the side of the semiconductor die facing the mounting surface, wherein the barrier prevents wetting of the sensor section by the adhesive that mechanically connects the semiconductor die to the mounting surface.
16. The sensor as claimed in claim 14 , wherein the stopper separates the encapsulation and the gel.
17. The sensor as claimed in claim 10 , wherein the sensor section is free of a metallic connection layer.
18. The sensor as claimed in claim 10 , wherein the semiconductor die has a rectangular shape in a plan view, and
wherein the semiconductor die is divided by a plane into a rectangular microelectronic section in the plan view and a rectangular sensor section in the plan view.
19. The sensor as claimed in claim 10 , wherein the sensor section comprises a movable region.
20. The sensor as claimed in claim 10 , wherein the sensor section comprises one or more of:
a magnetic sensor element,
an acceleration sensor element,
an ultrasonic transducer element, or
an acoustic transducer element.