Semiconductor processing tool and methods of operation
A semiconductor processing tool includes a cleaning chamber configured to perform a post-chemical mechanical polishing/planarization (post-CMP) cleaning operation in an oxygen-free (or in a near oxygen-free) manner. An inert gas may be provided into the cleaning chamber to remove oxygen from the cleaning chamber such that the post-CMP cleaning operation may be performed in an oxygen-free (or in a near oxygen-free) environment. In this way, the post-CMP cleaning operation may be performed in an environment that may reduce oxygen-causing corrosion of metallization layers and/or metallization structures on and/or in the semiconductor wafer, which may increase semiconductor processing yield, may decrease semiconductor processing defects, and/or may increase semiconductor processing quality, among other examples.
1. A method, comprising:
removing, via a vent, at a first wall of a cleaning chamber, and a plurality of nozzles of the cleaning chamber, oxygen from the cleaning chamber,
wherein the plurality of nozzles comprises:
a first nozzle at a second wall, of the cleaning chamber, intersecting with the first wall, and
a second nozzle at a third wall, of the cleaning chamber, intersecting with the first wall and opposite from the first side second wall; and
performing a post-chemical mechanical polishing/planarization (post-CMP) cleaning operation in the cleaning chamber after removing the oxygen from the cleaning chamber.
2. The method of claim 1 , wherein removing the oxygen from the cleaning chamber comprises:
providing an inert gas into the cleaning chamber to remove the oxygen from the cleaning chamber.
3. The method of claim 2 , wherein providing the inert gas into the cleaning chamber comprises:
providing the inert gas into the cleaning chamber through the plurality of nozzles in the cleaning chamber.
4. The method of claim 2 , wherein providing the inert gas into the cleaning chamber comprises:
providing the inert gas into the cleaning chamber through an inlet located on a nozzle, of the plurality of nozzles, that is configured to dispense a cleaning agent into the cleaning chamber.
5. A semiconductor processing tool, comprising:
a chemical mechanical polishing/planarization (CMP) cleaning chamber in which a semiconductor wafer is to be processed during a cleaning operation;
a first nozzle, at a first wall of the CMP cleaning chamber, configured to provide a cleaning agent into the CMP cleaning chamber during the cleaning operation; and
a plurality of second nozzles configured to provide an inert gas into the CMP cleaning chamber to remove oxygen from the CMP cleaning chamber,
wherein the plurality of second nozzles comprises:
a first subset of second nozzles at a second wall, of the CMP cleaning chamber, intersecting with the first wall, and
a second subset of second nozzles at a third wall, of the CMP cleaning chamber, intersecting with the first wall opposite from the first side second wall, and
a vent, at a fourth wall of the CMP cleaning chamber, configured to remove the oxygen from the CMP cleaning chamber,
wherein the fourth wall intersects with the first wall, the second wall, and third wall.
6. The semiconductor processing tool of claim 5 , wherein the plurality of second nozzles, to provide the inert gas into the CMP cleaning chamber to remove the oxygen from the CMP cleaning chamber, are configured to:
provide an amount of the inert gas into the CMP cleaning chamber to remove approximately 90% to approximately 100% of oxygen in the CMP cleaning chamber.
7. The semiconductor processing tool of claim 5 , wherein the first subset of second nozzles are configured to provide the inert gas at a first angle in the CMP cleaning chamber, and the second subset of second nozzles are configured to provide the inert gas at a second angle, different from the first angle, in the CMP cleaning chamber.
8. The semiconductor processing tool of claim 7 , wherein the first angle provides an approximately downward flow in the CMP cleaning chamber and the second angle provides an approximately horizontal flow in the CMP cleaning chamber.
9. The semiconductor processing tool of claim 5 , wherein the plurality of second nozzles are located at a top of the CMP cleaning chamber; and
wherein the vent is located at a bottom of the CMP cleaning chamber.
10. The semiconductor processing tool of claim 5 , wherein the plurality of second nozzles are located at a bottom of the CMP cleaning chamber; and
wherein the vent that is located at a top of the CMP cleaning chamber.
11. The semiconductor processing tool of claim 5 , further comprising:
a cleaning device, included in the cleaning chamber, configured to physically clean the semiconductor wafer during the cleaning operation.
12. The semiconductor processing tool of claim 11 , wherein the cleaning device comprises at least one of:
a cleaning pen, or
a cleaning brush.
13. A method, comprising:
positioning a semiconductor wafer in a processing chamber of a chemical mechanical polishing/planarization (CMP) tool;
performing a CMP operation to planarize one or more metallization layers of the semiconductor wafer in the processing chamber;
transferring, after performing the CMP operation, the semiconductor wafer from the processing chamber to a cleaning chamber of the CMP tool; and
removing, via a vent, at a first wall of a cleaning chamber, and a plurality of nozzles, of the cleaning chamber, oxygen from the cleaning chamber, wherein the plurality of nozzles comprises:
a first nozzle at a second wall, of the cleaning chamber, intersecting with the first wall and
a second nozzle at a third wall, of the cleaning chamber, intersecting with the first wall and opposite from the second wall.
14. The method of claim 13 , wherein the oxygen is removed from the cleaning chamber prior to a post-CMP cleaning operation associated with cleaning the semiconductor wafer in the cleaning chamber.
15. The method of claim 13 , wherein the oxygen is removed from the cleaning chamber during a post-CMP cleaning operation associated with cleaning the semiconductor wafer in the cleaning chamber.
16. The method of claim 13 , wherein the oxygen is removed from the cleaning chamber such that an oxygen concentration in the cleaning chamber is in a range of approximately 0% to approximately 10% in the cleaning chamber.
17. The method of claim 16 , wherein the oxygen is removed via an inert gas comprising at least one of:
argon (Ar),
nitrogen (N2), or
helium (He).
18. The semiconductor processing tool of claim 12 , wherein the cleaning device comprising the cleaning brush,
wherein the cleaning brush is configured to rotate against the semiconductor wafer in the cleaning chamber, and
wherein the cleaning brush extends between the first wall and a fourth wall of the cleaning chamber, wherein the fourth wall of the cleaning chamber each between is opposite from the third wall.
19. The method of claim 1 , wherein the plurality of nozzles further comprises a third nozzle at the second wall or the third wall, wherein the third nozzle is configured to provide an inert gas into the cleaning chamber at an angle different from the first nozzle or the second nozzle.
20. The semiconductor processing tool of claim 5 , wherein the plurality of second nozzles further comprises a third subset of second nozzles at the second wall or the third wall, wherein the third subset of second nozzles is configured to provide an inert gas into the cleaning chamber at an angle different from the first subset of second nozzles or the second subset of second nozzles.