Transistors comprising two-dimensional materials and related memory cells and electronic devices
A transistor comprising a channel region on a material is disclosed. The channel region comprises a two-dimensional material comprising opposing sidewalls and oriented perpendicular to the material. A gate dielectric is on the two-dimensional material and gates are on the gate dielectric. Semiconductor devices and systems including at least one transistor are disclosed, as well as methods of forming a semiconductor device.
1. A transistor, comprising:
a channel comprising a two-dimensional material directly laterally adjacent to a seed material, the channel oriented perpendicular to a base material, a width of the seed material laterally adjacent to the channel greater than a width of the channel;
a gate dielectric directly adjacent to the two-dimensional material on a side of the channel opposite the seed material, a horizontally-oriented portion of the two-dimensional material vertically underling the gate dielectric, and an outer sidewall of the gate dielectric and an outermost lateral edge of the horizontally-oriented portion of the channel substantially vertically aligned with one another; and
a gate adjacent to the gate dielectric.
2. The transistor of claim 1 , wherein the channel exhibits an L-shape in cross-section, a first portion of the channel directly overlying the base material and a second portion of the channel vertically adjacent to the first portion and oriented perpendicular to the base material.
3. The transistor of claim 1 , wherein the base material comprises a metal vertically underlying the channel.
4. The transistor of claim 3 , wherein the channel directly contacts the metal.
5. A transistor, comprising:
a channel comprising a two-dimensional material oriented perpendicular to a base material, the two-dimensional material comprising a transition metal dichalcogenide, graphene, graphene oxide, stanene, phosphorene, hexagonal boron nitride, borophene, silicone, graphyne, germanene, germanane, a 2D supracrystal, or a combination thereof;
a gate dielectric adjacent to the two-dimensional material, an upper surface of the gate dielectric substantially coplanar with an upper surface of the channel, a horizontally-oriented portion of the two-dimensional material vertically underling the gate dielectric, and an outer sidewall of the gate dielectric and an outermost lateral edge of the horizontally-oriented portion of the channel substantially vertically aligned with one another; and
a gate adjacent to the gate dielectric.
6. The transistor of claim 5 , wherein the two-dimensional material comprises a vertically-oriented portion and the horizontally-oriented portion vertically underlying the vertically-oriented portion, the horizontally-oriented portion extending horizontally beyond an outermost lateral edge of the vertically-oriented portion and directly contacting the base material.
7. The transistor of claim 5 , wherein the gate is laterally adjacent to the channel.
8. The transistor of claim 5 , further comprising another dielectric material directly laterally adjacent to the two-dimensional material, the another dielectric material directly vertically adjacent to a metal of the base material.
9. The transistor of claim 5 , wherein the two-dimensional material comprises molybdenum sulfide (MoS 2 ), molybdenum selenide (MoSe 2 ), molybdenum telluride (MoTe 2 ), tungsten sulfide (WS 2 ), tungsten telluride (WTe 2 ), or a combination thereof.
10. A memory cell, comprising:
one or more transistors, at least one of the transistors comprising:
an L-shaped channel comprising a two-dimensional material;
an insulative material directly laterally adjacent to the L-shaped channel, the L-shaped channel comprising a continuously vertical sidewall along an entire length of the insulative material;
a gate dielectric adjacent to the L-shaped channel, an upper surface of the gate dielectric substantially coplanar with an upper surface of the L-shaped channel, and a lower surface of the gate dielectric directly abutting an upper surface of a portion of the L-shaped channel along a horizontal interface therebetween; and
a gate adjacent to the gate dielectric; and
at least one capacitor in operative communication with the at least one transistor.
11. The memory cell of claim 10 , wherein the two-dimensional material comprises a crystalline material.
12. The memory cell of claim 10 , wherein the two-dimensional material comprises a transition metal dichalcogenide, graphene, graphene oxide, stanene, phosphorene, hexagonal boron nitride, borophene, silicone, graphyne, germanene, germanane, a 2D supracrystal, or a combination thereof.
13. The memory cell of claim 10 , wherein the two-dimensional material exhibits a cylindrical shape.
14. The memory cell of claim 10 , wherein the two-dimensional material surrounds the insulative material.
15. The memory cell of claim 10 , wherein the insulative material comprises gallium nitride, aluminum oxide, aluminum nitride, boron nitride, graphene, or a combination thereof.
16. An electronic device, comprising:
an array of memory cells, one or more of the memory cells comprising:
transistors, one or more of the transistors comprising:
an L-shaped portion of a two-dimensional material exhibiting a width of from about one monolayer of atoms to about three monolayers of atoms;
a dielectric material adjacent to the L-shaped portion of the two-dimensional material;
a gate dielectric laterally adjacent to the L-shaped portion of the two-dimensional material, upper surfaces of the two-dimensional material, the dielectric material, and the gate dielectric substantially coplanar with one another; and
a gate adjacent to the gate dielectric; and
capacitors in operative communication with the transistors.
17. The electronic device of claim 16 , wherein the two-dimensional material comprises molybdenum sulfide (MoS 2 ), molybdenum selenide (MoSe 2 ), molybdenum telluride (MoTe 2 ), tungsten sulfide (WS 2 ), tungsten selenide (WSe 2 ), tungsten telluride (WTe 2 ), niobium sulfide (NbS 2 ), niobium selenide (NbSe 2 ), niobium telluride (NbTe 2 ), zirconium sulfide (ZrS 2 ), zirconium selenide (ZrSe 2 ), zirconium telluride (ZrTe 2 ), hafnium sulfide (HfS 2 ), hafnium selenide (HfSe 2 ), hafnium telluride (ZrTe 2 ), rhenium sulfide (ReS 2 ), rhenium selenide (ReSe 2 ), rhenium telluride (ReTe 2 ), or a combination thereof.
18. The electronic device of claim 16 , wherein the gate is laterally adjacent to the L-shaped portion of the two-dimensional material.
19. The electronic device of claim 16 , wherein the L-shaped portion is laterally adjacent to and in direct contact with a sidewall of the dielectric material.