Semiconductor dies and devices with frontside and backside coils for inductive coupling
A semiconductor die is disclosed, including a plurality of transistors at a frontside of a semiconductor substrate, a backside inductor at a backside of the semiconductor substrate; and a frontside inductor at the frontside of the semiconductor substrate. The frontside inductor and the backside inductor are inductively coupled.
1. A semiconductor die, comprising:
a plurality of transistors at a frontside of a semiconductor substrate,
a backside inductor at a backside of the semiconductor substrate; and
a frontside inductor at the frontside of the semiconductor substrate, wherein the frontside inductor and the backside inductor are configured to be inductively coupled,
wherein at least a part of the frontside inductor is formed by an electrically conductive line extending into the semiconductor substrate.
2. The semiconductor die of claim 1 , wherein at least a part of the frontside inductor is formed by an electrically conductive line arranged vertically between a gate of a transistor of the plurality of transistors and the semiconductor substrate.
3. The semiconductor die of claim 1 , wherein the frontside inductor has a single winding.
4. The semiconductor die of claim 1 , wherein at least a part of the frontside inductor is formed by a metal line arranged above the plurality of transistors.
5. The semiconductor die of claim 1 , wherein the frontside inductor is electrically connected to a source region or a drain region of a transistor of the plurality of transistors.
6. The semiconductor die of claim 1 , wherein a material of the frontside inductor and the backside inductor includes metal.
7. The semiconductor die of claim 1 , further comprising:
circuitry which includes the plurality of transistors,
wherein the semiconductor die is configured to provide at least one of: a power supply signal, a data signal, or a clock signal from the backside inductor through inductive coupling to the frontside inductor and from the frontside inductor to the circuitry.
8. The semiconductor device of claim 7 , wherein the circuitry is configured to be unlocked by at least one of the data signal, the power supply signal, or the clock signal.
9. The semiconductor die of claim 1 , wherein the electrically conductive line includes at least one of tungsten or ruthenium.
10. The semiconductor die of claim 1 , wherein the backside inductor includes at least one winding forming an open loop in a plane at the backside.
11. The semiconductor die of claim 1 , wherein the backside inductor is electrically connected to a second backside inductor at the backside of the semiconductor substrate,
wherein the second backside inductor is configured to inductively couple to an external inductor or a second frontside inductor at the frontside of the semiconductor substrate.
12. The semiconductor die of claim 1 , wherein the backside inductor is formed in a plurality of layers of metallizations.
13. The semiconductor die of claim 1 , wherein the backside inductor includes at least one winding.
14. The semiconductor die of claim 1 , wherein the transistors are FinFETs.
15. An electronic device comprising:
a circuit board including a circuit board inductor; and
a semiconductor die including a die inductor and circuitry,
wherein the electronic device is configured to provide a power supply signal, a data signal or a clock signal from the circuit board inductor through inductive coupling to the die inductor and from the die inductor to the circuitry.
16. The electronic device of claim 15 , wherein the circuitry includes a plurality of transistors at a frontside of a semiconductor substrate, and
wherein the die inductor is arranged at a backside of the semiconductor substrate.
17. A semiconductor die, comprising:
a plurality of transistors at a frontside of a semiconductor substrate,
a backside coil at a backside of the semiconductor substrate, and
a frontside coil at the frontside of the semiconductor substrate,
wherein the frontside coil includes at least one winding, the backside coil includes at least one winding, and
wherein at least a part of the frontside coil is formed by an electrically conductive line extending into the semiconductor substrate.
18. The semiconductor die of claim 17 , wherein:
the frontside coil is electrically connected to a source region or a drain region of a transistor of the plurality of transistors.
19. A method of forming a semiconductor die, comprising:
forming a plurality of transistors at a frontside of a semiconductor substrate,
forming a frontside inductor at the frontside of the semiconductor substrate, and forming a backside inductor at a backside of the semiconductor substrate;
wherein the frontside inductor and the backside inductor are configured to be inductively coupled,
wherein at least a part of the frontside inductor is formed by an electrically conductive line extending into the semiconductor substrate.
20. The method of forming a semiconductor die of claim 19 , further comprising:
forming at least a part of the frontside inductor by an electrically conductive line arranged vertically between a gate of a transistor of the plurality of transistors and the semiconductor substrate.