IP Library Granted Patent US 12,066,755
Granted Patent B2
US 12,066,755 · App. 17/460,130 · Granted Aug 20, 2024

Pellicle for an EUV lithography mask and a method of manufacturing thereof

Inventor: Yun-Yue Lin (Hsinchu, TW)
Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
G03F1/24G03F1/64H01L21/0332H01L21/0337
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Quick Facts
Patent No.
US 12,066,755
App. No.
17/460,130
Granted
Aug 20, 2024
Kind
B2
Abstract

A pellicle for a reflective photo mask includes a frame, a core layer having a front surface and a rear surface, and disposed over the frame, a first capping layer disposed on the front surface of the core layer, an anti-reflection layer disposed on the first capping layer, a barrier layer disposed on the anti-reflection layer, and a heat emissive layer disposed on the barrier layer.

Claims (46)

1. A pellicle for a reflective mask, comprising:

a frame;

a core layer having a front surface and a rear surface disposed over the frame;

a first capping layer disposed on the front surface of the core layer;

an anti-reflection layer disposed on the first capping layer;

a barrier layer disposed on the anti-reflection layer; and

a heat emissive layer disposed on the barrier layer,

wherein the barrier layer is made of a different material than the anti-reflection layer and includes a Ru alloy, and

the anti-reflection layer includes Mo and at least one selected from the group consisting of C, B, Si, and P.

2. The pellicle of claim 1 , wherein the heat emissive layer includes Ru and at least one selected from the group consisting of Ir, Nb, Ti, V, Mo, Zr, B, P and Si.

3. The pellicle of claim 1 , wherein the heat emissive layer includes Ru 1-x M x , where M is at least one selected from the group consisting of Ir, Nb, Ti, V, Mo and Zr.

4. The pellicle of claim 3 , wherein x is greater than zero and equal to or less than 0.4.

5. The pellicle of claim 3 , wherein the heat emissive layer further includes at least one selected from the group consisting of B, P and Si.

6. The pellicle of claim 1 , wherein the Ru alloy is at least one selected from the group consisting of RuIr, RuNb, RuTi, RuZr and RuV.

7. The pellicle of claim 3 , wherein the barrier layer includes Ru 1-y M y , where M is at least one selected from the group consisting of Ir, Nb, Ti, V, Mo and Zr, and y>x.

8. The pellicle of claim 1 , further comprising a second capping layer disposed on the rear surface of the core layer.

9. The pellicle of claim 8 , wherein each of the first capping layer and the second capping layer includes at least one of silicon nitride or silicon carbide.

10. The pellicle of claim 1 , wherein the heat emissive layer is mixture of polycrystalline and amorphous material.

11. A pellicle for a reflective mask, comprising:

a core layer having a front surface and a rear surface;

a first capping layer disposed on the front surface of the core layer;

a second capping layer disposed on the rear surface of the core layer;

an anti-reflection layer disposed on the first capping layer; and

a heat emissive layer disposed directly on the anti-reflection layer, wherein:

the anti-reflection layer is made of a Mo alloy, and

the heat emissive layer is made of a Ru alloy.

12. The pellicle of claim 11 , wherein the heat emissive layer includes Ru 1-x M x , where M is at least one selected from the group consisting of Ir, Nb, Ti, V, Mo and Zr.

13. The pellicle of claim 12 , wherein x is greater than zero and equal to or less than 0.4.

14. The pellicle of claim 11 , wherein the anti-reflection layer includes Mo and at least one selected from the group consisting of C, B, Si, and P.

15. The pellicle of claim 11 , wherein a thickness of the heat emissive layer is in a range from 0.2 nm to 5 nm.

16. The pellicle of claim 11 , wherein a thickness of the anti-reflection layer is in a range from 0.2 nm to 5 nm.

17. A pellicle for a reflective mask, comprising:

a frame having a cavity;

a first capping layer disposed on the frame;

a core layer disposed on the first capping layer;

a second capping layer disposed on the core layer;

an anti-reflection layer disposed on the first capping layer within the cavity;

a barrier layer disposed on the anti-reflection layer within the cavity; and

a heat emissive layer disposed on the barrier layer within the cavity,

wherein the barrier layer is comprised of a different material than the heat emissive layer and is made of a first Ru alloy.

18. The pellicle of claim 17 , wherein:

the anti-reflection layer is made of Mo or a Mo alloy,

the heat emissive layer is made of Ru or a second Ru alloy, and

the first Ru alloy has a lower Ru concentration than the second Ru alloy.

19. The pellicle of claim 17 , wherein the heat emissive layer includes Ru and at least one selected from the group consisting of Ir, Nb, Ti, V, Mo, Zr, B, P and Si.

20. The pellicle of claim 17 , wherein the heat emissive layer includes Ru 1-x M x , where M is at least one selected from the group consisting of Ir, Nb, Ti, V, Mo and Zr.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 27, 2021
From: LIN, YUN-YUE
To: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Reel/Frame 057319/0377 →
Continuity (1)
Related Publication 20230069583A1 · Mar 2, 2023