IP Library Granted Patent US 11,908,843
Granted Patent B2
US 11,908,843 · App. 17/460,306 · Granted Feb 20, 2024

Semiconductor package, method of bonding workpieces and method of manufacturing semiconductor package

Inventors: Bingchien Wu (Hsinchu, TW); Wei-Jen Wu (New Taipei, TW); Chun-Yen Lo (Hsinchu, TW)
Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
H01L25/105H01L22/20H01L23/544H01L25/0657H01L25/50H01L2223/54426H01L2225/0651H01L2225/06568H01L2225/06586H01L2225/1035H01L2225/1058H01L2225/1082
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Quick Facts
Patent No.
US 11,908,843
App. No.
17/460,306
Granted
Feb 20, 2024
Kind
B2
Abstract

A semiconductor package includes a first semiconductor device and a second semiconductor device. The first semiconductor device includes a first alignment pattern having a plurality of first scale patterns arranged in a first direction. The second semiconductor device is mounted over the first semiconductor device and includes a second alignment pattern having a plurality of second scale patterns arranged in a second direction parallel to the first direction, and a scale pitch of the first scale patterns is different from a scale pitch of the second scale patterns.

Claims (26)

1. A semiconductor package, comprising:

a first semiconductor device comprising a first alignment pattern having a plurality of first scale patterns arranged in a first direction; and

a second semiconductor device mounted over the first semiconductor device and comprising a second alignment pattern having a plurality of second scale patterns arranged in a second direction parallel to the first direction, and a scale pitch of the first scale patterns is different from a scale pitch of the second scale patterns from a top view.

2. The semiconductor package as claimed in claim 1 , wherein the first semiconductor device comprises a first top metal layer having a first circuit pattern and the first alignment pattern insulated from the first circuit pattern.

3. The semiconductor package as claimed in claim 2 , wherein the second semiconductor device comprises a second top metal layer facing the first top metal layer and having a second circuit pattern electrically connected to the first circuit pattern and the second alignment pattern insulated from the second circuit pattern.

4. The semiconductor package as claimed in claim 1 , wherein a length of (n−1) scale pitches of the second scale pattern is equal to a length of (n) scale pitches of the first scale pattern.

5. The semiconductor package as claimed in claim 1 , wherein the plurality of first scale patterns are arranged in a zigzag manner deviated from the first direction, and the plurality of second scale patterns are arranged in a zigzag manner deviated from the second direction.

6. The semiconductor package as claimed in claim 1 , wherein a center of the plurality of first scale patterns is aligned with a center of the plurality of second scale patterns.

7. The semiconductor package as claimed in claim 1 , wherein the first alignment pattern further having a first alignment mark adjacent to the plurality of first scale patterns, and the second alignment pattern further having a second alignment mark adjacent to the plurality of second scale patterns.

8. The semiconductor package as claimed in claim 7 , wherein a contour of the first alignment mark is alignment with a contour of the second optical from a top view.

9. The semiconductor package as claimed in claim 1 , wherein the first semiconductor device comprises a plurality of first alignment marks arranged diagonally on the first semiconductor device, and the second semiconductor device comprises a plurality of second alignment marks arranged diagonally on the second semiconductor device.

10. A semiconductor package, comprising:

a first semiconductor device comprising a first alignment pattern having a plurality of first scale patterns separated from one another and arranged in a first direction; and

a second semiconductor device mounted over the first semiconductor device and comprising a second alignment pattern having a plurality of second scale patterns separated from one another and arranged in a second direction parallel to the first direction, and a scale pitch of the first scale patterns is different from a scale pitch of the second scale patterns.

11. The semiconductor package as claimed in claim 10 , wherein a length of (n−1) scale pitches of the second scale pattern is equal to a length of (n) scale pitches of the first scale pattern.

12. The semiconductor package as claimed in claim 10 , wherein the plurality of first scale patterns are arranged in a zigzag manner deviated from the first direction, and the plurality of second scale patterns are arranged in a zigzag manner deviated from the second direction.

13. The semiconductor package as claimed in claim 10 , wherein a center of the plurality of first scale patterns is aligned with a center of the plurality of second scale patterns.

14. The semiconductor package as claimed in claim 10 , wherein the first alignment pattern further having a first alignment mark adjacent to the plurality of first scale patterns, and the second alignment pattern further having a second alignment mark adjacent to the plurality of second scale patterns.

15. The semiconductor package as claimed in claim 14 , wherein a contour of the first alignment mark is alignment with a contour of the second optical from a top view.

16. The semiconductor package as claimed in claim 10 , wherein the first semiconductor device comprises a plurality of first alignment marks arranged diagonally on the first semiconductor device, and the second semiconductor device comprises a plurality of second alignment marks arranged diagonally on the second semiconductor device.

17. A semiconductor package, comprising:

a first semiconductor device comprising a first alignment pattern having a plurality of first scale patterns arranged in a first direction; and

a second semiconductor device mounted over the first semiconductor device and comprising a second alignment pattern having a plurality of second scale patterns arranged in a second direction parallel to the first direction, wherein a length of (n−1) scale pitches of the second scale patterns is equal to a length of (n) scale pitches of the first scale patterns.

18. The semiconductor package as claimed in claim 17 , wherein the plurality of first scale patterns are arranged in a zigzag manner deviated from the first direction, and the plurality of second scale patterns are arranged in a zigzag manner deviated from the second direction.

19. The semiconductor package as claimed in claim 17 , wherein a center of the plurality of first scale patterns is aligned with a center of the plurality of second scale patterns.

20. The semiconductor package as claimed in claim 17 , wherein the first semiconductor device comprises a plurality of first alignment marks arranged diagonally on the first semiconductor device, and the second semiconductor device comprises a plurality of second alignment marks arranged diagonally on the second semiconductor device.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 15, 2021
From: WU, BINGCHIEN; WU, WEI-JEN; LO, CHUN-YEN
To: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Reel/Frame 057495/0836 →
Continuity (1)
Related Publication 20230062411A1 · Mar 2, 2023
Cited By (1)
US 12,406,970