Selective deposition of SiOC thin films
Methods for selectively depositing silicon oxycarbide (SiOC) thin films on a dielectric surface of a substrate relative to a metal surface without generating significant overhangs of SiOC on the metal surface are provided. The methods can include at least one plasma enhanced atomic layer deposition (PEALD) cycle including alternately and sequentially contacting the substrate with a silicon precursor, a first Ar and H 2 plasma, a second Ar plasma and an etchant.
1. A method of selectively forming a silicon oxycarbide (SiOC) thin film on a dielectric surface of a substrate relative to a second surface of the substrate by a plasma enhanced atomic layer deposition (PEALD) process, wherein the PEALD process comprises at least one deposition cycle comprising:
contacting the substrate with a first vapor phase silicon reactant;
contacting the substrate with a second reactant comprising reactive species from a first plasma generated in a gas that does not comprise nitrogen;
contacting the substrate with a second plasma generated in a noble gas; and
contacting the substrate with an etchant; and
repeating the contacting steps until a silicon oxycarbide film of a desired thickness has been formed on the dielectric surface.
2. The method of claim 1 , wherein the second surface is a metal surface.
3. The method of claim 1 , wherein the second surface comprises TiN, W, Co, Cu, or Ru.
4. The method of claim 1 , wherein the dielectric surface comprises SiO 2 or SiN.
5. The method of claim 1 , wherein the noble gas is Ar gas.
6. The method of claim 1 , wherein the etchant comprises dilute HF.
7. The method of claim 1 , wherein the etchant comprises a plasma generated in a halide gas.
8. The method of claim 1 , wherein the etchant comprises a vapor phase halogen.
9. The method of claim 1 , wherein the reactive species are from a plasma generated in a gas that does not comprise nitrogen or oxygen.
10. The method of claim 9 , wherein the gas flows continuously throughout the deposition cycle.
11. The method of claim 1 , wherein the second reactant comprises reactive hydrogen species.
12. The method of claim 11 , wherein the reactive hydrogen species are from hydrogen and argon plasma.
13. The method of claim 1 , wherein the first plasma is generated in a gas comprising H 2 and Ar.
14. The method of claim 13 , wherein the first plasma is generated by applying RF power of 5 Watts (W) to about 5000 W to the gas.
15. The method of claim 1 , wherein the first vapor phase silicon reactant comprises 3-methoxypropyltrimethoxysilane (MPTMS) or bis(triethoxysilyl)ethane (BTESE).
16. The method of claim 1 , wherein the first vapor phase silicon reactant does not comprise nitrogen.
17. The method of claim 1 , wherein the deposition cycle is carried out at a process temperature of about 100° C. to about 300° C.
18. The method of claim 1 , wherein contacting the substrate with the first vapor phase silicon reactant and contacting the substrate with the second reactant are repeated two or more times in sequence prior to contacting the substrate with the plasma generated in a noble gas and the etchant.
19. A method of selectively forming a silicon oxycarbide (SiOC) thin film on a dielectric surface of a substrate in a reaction space relative to a metal surface of the substrate comprising a plurality of deposition cycles, wherein at least one deposition cycle comprises:
contacting the metal and dielectric surfaces of the substrate with a silicon precursor comprising 3-methoxypropyltrimethoxysilane (MPTMS);
contacting the metal and dielectric surfaces of the substrate with a first plasma generated in a gas that does not comprise nitrogen;
contacting the metal and dielectric surfaces of the substrate with a second plasma generated in argon gas; and
contacting the metal and dielectric surfaces of the substrate with an etchant wherein the deposition cycle is repeated two or more times to form the SiOC thin film.
20. The method of claim 19 , wherein the first plasma is generated in a gas comprising H 2 and Ar.