Multilayer ceramic electronic component
A multilayer ceramic electronic component includes: a ceramic body including a dielectric layer having a main component represented by (Ba 1-x Ca x )(Ti 1-y (Zr, Sn, Hf) y )O 3 (where, 0≤x≤1, 0≤y≤0.5), and having a plurality of grains and grain boundaries disposed between the plurality of grains, and including first and second internal electrodes alternately stacked with the dielectric layer interposed therebetween; a first external electrode; and a second external electrode, wherein the dielectric layer includes a triple point in contact with three grain boundaries and a secondary phase of Si disposed inside the triple point, wherein a dispersion of an Si content at an interface between the dielectric layer and the internal electrode may be 1% by weight or less.
1. A multilayer ceramic electronic component, comprising:
a ceramic body including a dielectric layer having a main component represented by (Ba 1-x Ca x )(Ti 1-y (Zr, Sn, Hf) y )O 3 (where, 0≤x≤1, 0≤y≤0.5), and having a plurality of grains and grain boundaries disposed between the plurality of grains, and including first and second internal electrodes alternately stacked with the dielectric layer interposed therebetween;
a first external electrode connected to the first internal electrode; and
a second external electrode connected to the second internal electrode,
wherein the dielectric layer comprises a triple point disposed in contact with three grain boundaries and a secondary phase of Si disposed inside the triple point,
wherein a dispersion of an Si content at an interface between the dielectric layer and the internal electrode is 1% by weight or less.
2. The multilayer ceramic electronic component of claim 1 , wherein a ratio (b/a) of an average Si content (b) of the triple point to an average Si content (a) inside a grain of the plurality of grains is within a range of exceeding 3 and/or less than 6.
3. The multilayer ceramic electronic component of claim 1 , wherein the dielectric layer comprises a first subcomponent including one or more of Y, Dy, Ho, Er, Gd, Ce, Nd, Sm, Tb, Eu, Tm, La, Lu, and Yb,
wherein a region in the dielectric layer, having a maximum content of the first subcomponent, is disposed in at least one of the grain boundaries.
4. The multilayer ceramic electronic component of claim 3 , wherein a region in the dielectric layer, having a maximum content of the first subcomponent, is disposed in the triple point.
5. The multilayer ceramic electronic component of claim 1 , wherein at least one of the plurality of grains has an average particle diameter of 300 nm or less.
6. The multilayer ceramic electronic component of claim 1 , wherein the dielectric layer has an average thickness of 0.5 μm or less.
7. The multilayer ceramic electronic component of claim 1 , wherein a secondary phase of Si at an interface between the dielectric layer and the internal electrode has an average content of 0.1 mol % or less.
8. The multilayer ceramic electronic component of claim 1 , further comprising a non-detection region of a secondary phase of Si disposed at an interface between the dielectric layer and the internal electrode.
9. The multilayer ceramic electronic component of claim 1 , wherein the dielectric layer comprises a second subcomponent including Mg,
wherein a secondary phase of Mg at an interface between the dielectric layer and the internal electrode has an average content of 0.1 mol % or less.
10. The multilayer ceramic electronic component of claim 1 , wherein the dielectric layer and/or the internal electrode comprises Sn,
wherein a region in which a region in the dielectric layer and/or the internal electrode, having a maximum content of Sn, is disposed at an interface between the dielectric layer and the internal electrode.
11. The multilayer ceramic electronic component of claim 1 , wherein the first internal electrode and/or the second internal electrode has an average thickness of 0.5 μm or less.
12. A multilayer ceramic electronic component, comprising:
a ceramic body including:
a dielectric layer including a main component, and a plurality of grains with grain boundaries disposed between the plurality of grains; and
first and second internal electrodes alternately stacked with the dielectric layer interposed therebetween,
wherein the dielectric layer comprises a triple point disposed in contact with three grain boundaries and a secondary phase of Si disposed inside the triple point,
wherein a dispersion of an Si content at an interface between the dielectric layer and the internal electrode is 1% by weight or less.
13. The multilayer ceramic electronic component of claim 12 , wherein a ratio (b/a) of an average Si content (b) of the triple point to an average Si content (a) inside a grain of the plurality of grains is within a range of exceeding 3 and/or less than 6.
14. The multilayer ceramic electronic component of claim 12 , wherein the dielectric layer comprises a first subcomponent including one or more of Y, Dy, Ho, Er, Gd, Ce, Nd, Sm, Tb, Eu, Tm, La, Lu, and Yb,
wherein a region in the dielectric layer, having a maximum content of the first subcomponent, is disposed in at least one of the grain boundaries.
15. The multilayer ceramic electronic component of claim 14 , wherein a region in the dielectric layer, having a maximum content of the first subcomponent, is disposed in the triple point.
16. The multilayer ceramic electronic component of claim 12 , wherein at least one of the plurality of grains has an average particle diameter of 300 nm or less.
17. The multilayer ceramic electronic component of claim 12 , wherein the dielectric layer has an average thickness of 0.5 μm or less.
18. The multilayer ceramic electronic component of claim 12 , wherein a secondary phase of Si at an interface between the dielectric layer and the internal electrode has an average content of 0.1 mol % or less.
19. The multilayer ceramic electronic component of claim 12 , further comprising a non-detection region of a secondary phase of Si disposed at an interface between the dielectric layer and the internal electrode.
20. The multilayer ceramic electronic component of claim 12 , wherein the dielectric layer comprises a second subcomponent including Mg,
wherein a secondary phase of Mg at an interface between the dielectric layer and the internal electrode has an average content of 0.1 mol % or less.
21. A multilayer ceramic electronic component, comprising:
a ceramic body including:
a dielectric layer including a main component, and a plurality of grains with grain boundaries disposed between the plurality of grains; and
first and second internal electrodes alternately stacked with the dielectric layer interposed therebetween,
wherein the dielectric layer comprises a triple point disposed in contact with three grain boundaries and a secondary phase of Si disposed inside the triple point,
wherein a secondary phase of Si at an interface between the dielectric layer and the internal electrode has an average content of 0.1 mol % or less, and
wherein a ratio (b/a) of an average Si content (b) of the triple point to an average Si content (a) inside a grain of the plurality of grains is within a range of exceeding 3 and/or less than 6.
22. The multilayer ceramic electronic component of claim 21 , wherein the dielectric layer comprises a first subcomponent including one or more of Y, Dy, Ho, Er, Gd, Ce, Nd, Sm, Tb, Eu, Tm, La, Lu, and Yb,
wherein a region in the dielectric layer, having a maximum content of the first subcomponent, is disposed in at least one of the grain boundaries.
23. The multilayer ceramic electronic component of claim 22 , wherein a region in the dielectric layer, having a maximum content of the first subcomponent, is disposed in the triple point.
24. The multilayer ceramic electronic component of claim 21 , wherein at least one of the plurality of grains has an average particle diameter of 300 nm or less.
25. The multilayer ceramic electronic component of claim 21 , wherein the dielectric layer has an average thickness of 0.5 μm or less.
26. The multilayer ceramic electronic component of claim 21 , further comprising a non-detection region of a secondary phase of Si disposed at an interface between the dielectric layer and the internal electrode.
27. The multilayer ceramic electronic component of claim 21 , wherein the dielectric layer comprises a second subcomponent including Mg,
wherein a secondary phase of Mg at an interface between the dielectric layer and the internal electrode has an average content of 0.1 mol % or less.
28. The multilayer ceramic electronic component of claim 21 , wherein the dielectric layer and/or the internal electrode comprises Sn,
wherein a region in which a region in the dielectric layer and/or the internal electrode, having a maximum content of Sn, is disposed at an interface between the dielectric layer and the internal electrode.
29. The multilayer ceramic electronic component of claim 21 , wherein the first internal electrode and/or the second internal electrode has an average thickness of 0.5 μm or less.