Display device including an antireflection layer disposed between an organic light emitting diode and a thin film encapsulation layer
A display device includes an organic light emitting diode emitting light, an antireflection layer disposed on the organic light emitting diode and preventing reflection of external light incident from an outside, and a thin film encapsulation layer disposed on the antireflection layer.
1. A display device, comprising:
an organic light emitting diode emitting light;
an antireflection layer disposed on the organic light emitting diode and preventing reflection of external light incident from an outside; and
a thin film encapsulation layer disposed on the antireflection layer, the thin film encapsulation layer including:
a first inorganic encapsulation layer disposed directly on the antireflection layer and including silicon nitride;
a second inorganic encapsulation layer disposed on the first inorganic encapsulation layer;
an organic encapsulation layer directly disposed on the second inorganic encapsulation layer; and
a third inorganic encapsulation layer disposed on the organic encapsulation layer,
wherein a thickness of the first inorganic encapsulation layer in a direction perpendicular to a main plane extension direction of the substrate is about 50 angstroms to about 150 angstroms.
2. The display device of claim 1 , wherein the antireflection layer includes ytterbium (Yb).
3. The display device of claim 1 , wherein the antireflection layer includes bismuth (Bi).
4. The display device of claim 1 , wherein the second inorganic encapsulation layer includes silicon oxynitride.
5. The display device of claim 4 , wherein the third inorganic encapsulation layer includes silicon nitride.
6. The display device of claim 1 , further comprising a substrate on which the organic light emitting diode is disposed,
wherein a thickness of the second inorganic encapsulation layer is about 9,000 angstroms to about 11,000 angstroms, a thickness of the organic encapsulation layer is about 3 micrometers to about 5 micrometers, and a thickness of the third inorganic encapsulation layer is about 6,000 angstroms to about 8,000 angstroms.
7. The display device of claim 1 , wherein the first to third inorganic encapsulation layers are chemical vapor deposition treated layers.
8. The display device of claim 1 , further comprising:
a capping layer disposed between the organic light emitting diode and the antireflection layer.