Semiconductor device having galvanic isolation and method therefor
A semiconductor device package having galvanic isolation is provided. The semiconductor device includes a package leadframe having a first die pad and a second die pad separated from the first die pad. A first semiconductor die is attached to the first die pad of the package leadframe. A second semiconductor die is attached to the second die pad of the package leadframe. A communication device is attached over the second semiconductor die. The communication device is configured to communicate wirelessly with the second semiconductor die.
1. A semiconductor device comprising:
a package leadframe having a first die pad and a second die pad, the second die pad separated and electrically isolated from the first die pad;
a first semiconductor die attached to the first die pad of the package leadframe;
a second semiconductor die attached to the second die pad of the package leadframe; and
a communication device attached over the second semiconductor die, the communication device configured to communicate wirelessly with the second semiconductor die.
2. The semiconductor device of claim 1 , further comprising an isolation barrier disposed between the second semiconductor die and the communication device.
3. The semiconductor device of claim 1 , wherein the communication device is interconnected to the first semiconductor die by way of a bond wire.
4. The semiconductor device of claim 1 , wherein the second die pad is separated from the first die pad by a predetermined distance, the predetermined distance configured for high voltage isolation.
5. The semiconductor device of claim 1 , wherein:
the second semiconductor die includes a first inductive coil; and
the communication device includes a second inductive coil substantially aligned with the first inductive coil, a wireless communication link between the second semiconductor die and the communication device formed by way of the first and second inductive coils.
6. The semiconductor device of claim 1 , wherein:
the first semiconductor die is interconnected to a first lead of the package leadframe by way of a first bond wire; and
the second semiconductor die is interconnected to a second lead of the package leadframe by way of a second bond wire, the second lead separated from the first lead by a predetermined distance configured for high voltage isolation.
7. The semiconductor device of claim 1 , wherein:
the first semiconductor die is configured for operation in a first voltage domain; and
the second semiconductor die is configured for operation in a second voltage domain, the second voltage domain having voltage values different from the first voltage domain.
8. The semiconductor device of claim 1 , wherein the communication device is characterized as a semiconductor die configured to communicate wirelessly with the second semiconductor die.
9. The semiconductor device of claim 1 , further comprising a second communication device attached over the first semiconductor die, the second communication device configured to communicate wirelessly with the first semiconductor die.
10. A method of manufacturing a semiconductor device, the method comprising:
providing a package leadframe having a first die pad and a second die pad, the second die pad separated and electrically isolated from the first die pad;
attaching a first semiconductor die to the first die pad of the package leadframe;
attaching a second semiconductor die to the second die pad of the package leadframe;
attaching an isolation barrier on the second semiconductor die;
attaching a communication device on the isolation barrier; and
forming a wireless communication link between the communication device and the second semiconductor die.
11. The method of claim 10 , further comprising interconnecting the communication device with the first semiconductor die by way of a bond wire.
12. The method of claim 10 , wherein:
the second semiconductor die includes a first inductive coil; and
the communication device includes a second inductive coil substantially aligned with the first inductive coil, the wireless communication link between the communication device and the second semiconductor die formed by way of the first and second inductive coils.
13. The method of claim 10 , wherein:
the first semiconductor die is configured for operation in a first voltage domain; and
the second semiconductor die is configured for operation in a second voltage domain, the second voltage domain having voltage values different from the first voltage domain.
14. The method of claim 10 , wherein:
the second semiconductor die includes or is coupled to a first capacitor plate; and
the communication device includes or is coupled to a second capacitor plate substantially aligned with the first capacitor plate, the wireless communication link between the communication device and the second semiconductor die formed by way of a capacitor including the first and second capacitor plates.
15. The method of claim 10 , further comprising:
interconnecting the first semiconductor die with a first lead of the package leadframe by way of a first bond wire; and
interconnecting the second semiconductor die with a second lead of the package leadframe by way of a second bond wire, the second lead separated from the first lead by a predetermined distance, the predetermined distance configured for high voltage isolation.
16. A semiconductor device comprising:
a package leadframe having a first die pad and a second die pad, the second die pad separated and electrically isolated from the first die pad;
a first semiconductor die attached to the first die pad of the package leadframe;
a second semiconductor die attached to the second die pad of the package leadframe;
an isolation barrier having a first major side attached to the second semiconductor die; and
a communication device attached to a second major side of the isolation barrier in a stacked configuration with the second die, the communication device interconnected to the first semiconductor die by way of a first bond wire and configured to communicate wirelessly with the second semiconductor die.
17. The semiconductor device of claim 16 , wherein:
the first semiconductor die is configured for operation in a first voltage domain; and
the second semiconductor die is configured for operation in a second voltage domain, the second voltage domain having voltage values different from the first voltage domain.
18. The semiconductor device of claim 16 , wherein the second die pad is separated from the first die pad by a predetermined distance, the predetermined distance configured for high voltage isolation.
19. The semiconductor device of claim 16 , wherein:
the second semiconductor die includes a first inductive coil; and
the communication device includes or is coupled to a second inductive coil substantially aligned with the first inductive coil, a wireless communication link between the second semiconductor die and the communication device formed by way of the first and second inductive coils.
20. The semiconductor device of claim 16 , wherein:
the first semiconductor die is interconnected to a first lead of the package leadframe by way of a second bond wire; and
the second semiconductor die is interconnected to a second lead of the package leadframe by way of a third bond wire, the second lead separated from the first lead by a predetermined distance, the predetermined distance configured for high voltage isolation.