Semiconductor device incorporating a substrate recess
A semiconductor device includes a substrate having an upper surface including a recess region, a semiconductor structure on the substrate, a portion of the semiconductor structure within the recess region, and a gate contact, a drain contact, and a source contact on the semiconductor structure. The recess region does not vertically overlap the drain contact or the source contact.
1. A semiconductor device comprising:
a substrate, wherein an upper surface of the substrate comprises a recess region;
a semiconductor structure on the substrate, a portion of the semiconductor structure within the recess region; and
a gate contact, a drain contact, and a source contact on the semiconductor structure,
wherein the recess region is in between the gate contact and the source contact and does not vertically overlap the drain contact,
wherein the semiconductor device comprises a high electron mobility transistor (HEMT) and the semiconductor structure comprises a channel layer and a barrier layer on the channel layer, and the channel layer extends continuously from underneath the source contact to underneath the drain contact,
wherein the portion of the semiconductor structure that is within the recess region is an undoped Group III-nitride layer, and
wherein the substrate comprises an n-type semiconductor substrate that includes a p-type impurity region adjacent the recess region.
2. The semiconductor device of claim 1 , wherein the p-type impurity region does not vertically overlap the drain contact.
3. The semiconductor device of claim 2 , wherein the p-type impurity region is on at least one sidewall and/or a bottom surface of the recess region.
4. The semiconductor device of claim 1 , wherein the recess region vertically overlaps a portion of the semiconductor structure that is in between the source contact and the gate contact.
5. The semiconductor device of claim 1 , wherein the upper surface of the substrate comprises silicon carbide.
6. The semiconductor device of claim 1 , wherein the recess region does not vertically overlap the gate contact or the source contact.
7. The semiconductor device of claim 1 , wherein the p-type impurity region only vertically overlaps a portion of the source contact.
8. The semiconductor device of claim 1 , wherein the p-type impurity region only vertically overlaps a portion of the gate contact.
9. A semiconductor device comprising:
a substrate, wherein an upper surface of the substrate comprises a recess region;
a semiconductor structure on the substrate, a portion of the semiconductor structure within the recess region; and
a gate contact, a drain contact, and a source contact on the semiconductor structure,
wherein the substrate and the portion of the semiconductor structure within the recess region form a heterojunction,
wherein the semiconductor device is configured so that a two-dimensional electron gas (“2DEG”) layer that extends continuously from underneath the source contact to underneath the drain contact is induced in the semiconductor structure during on-state operation,
wherein the recess region does not vertically overlap any of the source contact, the gate contact or the drain contact
wherein portions of the substrate that comprise sidewalls of the recess region and a bottom of the recess region are implanted with first conductivity type dopants.
10. The semiconductor device of claim 9 , wherein the portion of the semiconductor structure that is within the recess region is an undoped Group III-nitride layer.
11. The semiconductor device of claim 9 , wherein the substrate comprises an n-type semiconductor substrate.
12. The semiconductor device of claim 9 , wherein the portions of the substrate that comprise the sidewalls of the recess region and the bottom of the recess region that are implanted with the first conductivity type dopants only vertically overlaps a portion of the source contact.
13. The semiconductor device of claim 9 , wherein the portions of the substrate that comprise the sidewalls of the recess region and the bottom of the recess region that are implanted with the first conductivity type dopants only vertically overlaps a portion of the gate contact.