Block list management for wordline start voltage
Systems, apparatuses, and methods provide for technology that stores a sampled dynamic start voltage value based on a fast to program plane. A current multi-plane program operation is received corresponding to a current cell block and wordline pair associated with a current enabled plane of a plurality of enabled planes. A block list is scanned based on the current cell block and wordline pair. The block list includes a plurality of entries including a reference start voltage corresponding to a reference cell block and wordline pair associated with a reference enabled plane. Additionally, the reference start voltage is reused as a dynamic start voltage in response to finding a match between the current cell block and wordline pair as compared to the reference cell block and wordline pair. Such a match is performed only for a least enabled plane of the plurality of enabled planes.
1. A semiconductor apparatus comprising:
one or more substrates; and
logic coupled to the one or more substrates, wherein the logic is implemented at least partly in one or more of configurable or fixed-functionality hardware, the logic to:
receive a current multi-plane program operation corresponding to a current cell block and wordline pair, wherein the current cell block and wordline pair is associated with a current enabled plane of a plurality of enabled planes,
scan a block list based on the current cell block and wordline pair, wherein the block list includes a plurality of entries, wherein the plurality of entries individually include a reference start voltage corresponding to a reference cell block and wordline pair, and wherein the reference cell block and wordline pair is associated with a reference enabled plane of the plurality of enabled planes, and
reuse the reference start voltage as a dynamic start voltage in response to finding a match between the current cell block and wordline pair and the reference cell block and wordline pair during the scan of the block list, wherein the match is performed only for a least enabled plane of the plurality of enabled planes.
2. The semiconductor apparatus of claim 1 , wherein the scan operation is performed across the plurality of enabled planes and across the plurality of entries to the block list.
3. The semiconductor apparatus of claim 1 , wherein the least enabled plane comprises a plane from the plurality of enabled planes that has a lowest numerical value.
4. The semiconductor apparatus of claim 1 , wherein the logic is further to:
store a new reference start voltage to the block list in response to finding no match between the current cell block and wordline pair and the reference cell block and wordline pair during the scan of the block list and in response to a determination that there is an unfilled entry in the block list.
5. The semiconductor apparatus of claim 4 , wherein the new reference start voltage is selected in response to a determination of which of a plurality of start voltages associated with a plurality of cell block and wordline pairs is fastest to program.
6. The semiconductor apparatus of claim 1 , wherein the logic is further to:
remove the reference start voltage from the block list in response to a determination that a last page of any of a plurality of decks associated with the reference cell block have been programmed or in response to a determination that any of the plurality of decks associated with the reference cell block have been erased.
7. The semiconductor apparatus of claim 1 , wherein the logic is further to:
maintain a handshake with a host system to receive instructions to remove the reference start voltage from the block list in response to a determination that two or more of the plurality of entries correspond to a single one of a plurality of cell block and plane pairs.
8. A computing system comprising:
a memory array including a plurality of cell blocks; and
a memory controller coupled to the memory array, the memory to:
receive a current multi-plane program operation corresponding to a current cell block and wordline pair, wherein the current cell block and wordline pair is associated with a current enabled plane of a plurality of enabled planes,
scan a block list based on the current cell block and wordline pair, wherein the block list includes a plurality of entries, wherein the plurality of entries individually include a reference start voltage corresponding to a reference cell block and wordline pair, and wherein the reference cell block and wordline pair is associated with a reference enabled plane of the plurality of enabled planes, and
reuse the reference start voltage as a dynamic start voltage in response to finding a match between the current cell block and wordline pair and the reference cell block and wordline pair during the scan of the block list, wherein the match is performed only for a least enabled plane of the plurality of enabled planes.
9. The computing system of claim 8 , wherein the scan operation is performed across the plurality of enabled planes and across the plurality of entries to the block list.
10. The computing system of claim 8 , wherein the least enabled plane comprises a plane from the plurality of enabled planes that has a lowest numerical value.
11. The computing system of claim 8 , wherein the memory is further to:
store a new reference start voltage to the block list in response to finding no match between the current cell block and wordline pair and the reference cell block and wordline pair during the scan of the block list and in response to a determination that there is an unfilled entry in the block list.
12. The computing system of claim 11 , wherein the new reference start voltage is selected in response to a determination of which of a plurality of start voltages associated with a plurality of cell block and wordline pairs is fastest to program.
13. The computing system of claim 8 , wherein the memory is further to:
remove the reference start voltage from the block list in response to a determination that a last page of any of a plurality of decks associated with the reference cell block have been programmed or in response to a determination that any of the plurality of decks associated with the reference cell block have been erased.
14. The computing system of claim 8 , wherein the memory is further to:
maintain a handshake with a host system to receive instructions to remove the reference start voltage from the block list in response to a determination that two or more of the plurality of entries correspond to a single one of a plurality of cell block and plane pairs.
15. At least one computer readable medium, comprising a set of instructions, which when executed by a computing device, cause the computing device to:
receive a current multi-plane program operation corresponding to a current cell block and wordline pair, wherein the current cell block and wordline pair is associated with a current enabled plane of a plurality of enabled planes;
scan a block list based on the current cell block and wordline pair, wherein the block list includes a plurality of entries, wherein the plurality of entries individually include a reference start voltage corresponding to a reference cell block and wordline pair, and wherein the reference cell block and wordline pair is associated with a reference enabled plane of the plurality of enabled planes; and
reuse the reference start voltage as a dynamic start voltage in response to finding a match between the current cell block and wordline pair and the reference cell block and wordline pair during the scan of the block list, wherein the match is performed only for a least enabled plane of the plurality of enabled planes.
16. The at least one computer readable medium of claim 15 , wherein the scan operation is performed across the plurality of enabled planes and across the plurality of entries to the block list.
17. The at least one computer readable medium of claim 15 , wherein the least enabled plane comprises a plane from the plurality of enabled planes that has a lowest numerical value.
18. The at least one computer readable medium of claim 15 , wherein the set of instructions, which when executed by the computing device, cause the computing device further to:
store a new reference start voltage to the block list in response to finding no match between the current cell block and wordline pair and the reference cell block and wordline pair during the scan of the block list and in response to a determination that there is an unfilled entry in the block list, wherein the new reference start voltage is selected in response to a determination of which of a plurality of start voltages associated with a plurality of cell block and wordline pairs is fastest to program.
19. The at least one computer readable medium of claim 15 , wherein the set of instructions, which when executed by the computing device, cause the computing device further to:
remove the reference start voltage from the block list in response to a determination that a last page of any of a plurality of decks associated with the reference cell block have been programmed or in response to a determination that any of the plurality of decks associated with the reference cell block have been erased.
20. The at least one computer readable medium of claim 15 , wherein the set of instructions, which when executed by the computing device, cause the computing device further to:
maintain a handshake with a host system to receive instructions to remove the reference start voltage from the block list in response to a determination that two or more of the plurality of entries correspond to a single one of a plurality of cell block and plane pairs.