Conformal power delivery structures near high-speed signal traces
Technologies for conformal power delivery structures near high-speed signal traces are disclosed. In one embodiment, a dielectric layer may be used to keep a power delivery structure spaced apart from high-speed signal traces, preventing deterioration of signals on the high-speed signal traces due to capacitive coupling to the power delivery structure.
1 . An integrated circuit component comprising:
a die;
a conformal power delivery structure adjacent the die; one or more dielectric layers; and
one or more signal traces, wherein individual signal traces of the one or more signal traces are spaced apart from the conformal power delivery structure by a dielectric layer of the one or more dielectric layers,
wherein the conformal power delivery structure comprises:
a first electrically conductive layer comprising metal, the first electrically conductive layer defining one or more recesses, wherein a lower surface of the first electrically conductive layer defines a plane;
a second electrically conductive layer comprising metal, the second electrically conductive layer at least partially within the one or more recesses of the first electrically conductive layer and having a lower surface that generally conforms with an upper surface of the first electrically conductive layer, wherein one or more parts of the second electrically conductive layer disposed within the one or more recesses of the first electrically conductive layer extend to the plane defined by the lower surface of the first electrically conductive layer; and
a dielectric material between the surfaces of the first electrically conductive layer and the second electrically conductive layer that conform with one another.
2 . The integrated circuit component of claim 1 , further comprising one or more buffer layers, wherein individual buffer layers of the one or more buffer layers are between the second electrically conductive layer and individual dielectric layers of the one or more dielectric layers.
3 . The integrated circuit component of claim 2 , wherein the second electrically conductive layer comprises a plurality of grains separated by grain boundaries, wherein individual grains of the plurality of grains have a diameter between 10 and 100 micrometers, wherein the one or more parts of the second electrically conductive layer disposed within the one or more recesses of the first electrically conductive layer comprise the plurality of grains.
4 . The integrated circuit component of claim 1 , wherein individual signal traces of the one or more signal traces are spaced at least 10 micrometers apart from the conformal power delivery structure by a dielectric layer of the one or more dielectric layers.
5 . The integrated circuit component of claim 1 , wherein the one or more signal traces are one or more high-speed signal traces.
6 . The integrated circuit component of claim 1 , wherein the one or more dielectric layers comprise polyimide.
7 . The integrated circuit component of claim 1 , wherein the one or more dielectric layers comprise one or more photoimageable dielectric layers.
8 . The integrated circuit component of claim 1 , wherein the integrated circuit component is a processor.
9 . The integrated circuit component of claim 1 , wherein the one or more signal traces extend through the conformal power delivery structure.
10 . The integrated circuit component of claim 1 , wherein the dielectric material has a thickness that is less than a thickness of the one or more parts of the second electrically conductive layer disposed within the one or more recesses of the first electrically conductive layer.
11 . The integrated circuit component of claim 1 , wherein the one or more signal traces comprise differential signal pairs.
12 . The integrated circuit component of claim 1 , wherein the one or more dielectric layers comprise an organic material interspersed with silica particles.
13 . The integrated circuit component of claim 1 , wherein the conformal power delivery structure is formed using a cold spray deposition process.
14 . The integrated circuit component of claim 1 , wherein the first electrically conductive layer and the second electrically conductive layer each comprise copper.
15 . The integrated circuit component of claim 1 , wherein the one or more signal traces have a width between 50 micrometers and 150 micrometers.
16 . The integrated circuit component of claim 1 , wherein the one or more signal traces have a height between 5 micrometers and 40 micrometers.
17 . The integrated circuit component of claim 1 , wherein the one or more dielectric layers separate the one or more signal traces from the conformal power delivery structure by a distance between 10 micrometers and 200 micrometers.
18 . An integrated circuit component comprising:
a die;
a conformal power delivery structure adjacent the die;
one or more dielectric layers; and
one or more signal traces, wherein individual signal traces of the one or more signal traces are spaced apart from the conformal power delivery structure by a dielectric layer of the one or more dielectric layers,
wherein the conformal power delivery structure comprises:
a first electrically conductive layer comprising metal, the first electrically conductive layer defining one or more recesses;
a second electrically conductive layer comprising metal, the second electrically conductive layer at least partially within the one or more recesses of the first electrically conductive layer and having a lower surface that generally conforms with an upper surface of the first electrically conductive layer; and
a dielectric material between the surfaces of the first electrically conductive layer and the second electrically conductive layer that conform with one another,
further comprising one or more buffer layers, wherein individual buffer layers of the one or more buffer layers are between the second electrically conductive layer and individual dielectric layers of the one or more dielectric layers,
wherein individual buffer layers of the one or more buffer layers comprise titanium, tantalum, gold, or copper.
19 . An integrated circuit component comprising:
a conformal power delivery structure defined in a plane; and
one or more high-speed signal traces in the plane defined by the conformal power delivery structure, wherein the one or more high-speed signal traces extend through the conformal power delivery structure.
20 . The integrated circuit component of claim 19 , wherein the one or more high-speed signal traces are less than 50 micrometers away from the conformal power delivery structure.
21 . The integrated circuit component of claim 19 , wherein the conformal power delivery structure comprises a first power plane and a second power plane separated by a dielectric material.
22 . The integrated circuit component of claim 19 , wherein the one or more high-speed signal traces are spaced apart from the conformal power delivery structure by a dielectric layer.
23 . The integrated circuit component of claim 19 , wherein the conformal power delivery structure comprises a buffer stack including a dielectric layer and a buffer layer.
24 . The integrated circuit component of claim 19 , wherein the conformal power delivery structure is formed using a high throughput additive manufacturing process.