IP Library Granted Patent US 12,628,465
Granted Patent B2
US 12,628,465 · App. 17/484,633 · Granted May 12, 2026

Method for manufacturing inorganic light emitter

Inventors: Masanobu Ikeda (Tokyo, JP); Yasuhiro Kanaya (Tokyo, JP)
Assignee: Magnolia White Corporation
H10H20/01H10H20/83H10H20/84H10H29/142H10H20/032H10H20/034
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Quick Facts
Patent No.
US 12,628,465
App. No.
17/484,633
Granted
May 12, 2026
Kind
B2
Abstract

A method for manufacturing an inorganic light emitter, include arranging an inorganic light emitting element on one surface of a substrate; separating the inorganic light emitting element from the substrate while forming an oxide layer on a first surface of the inorganic light emitting element by emitting laser light to the first surface under an atmosphere having an oxygen concentration higher than an oxygen concentration of air, the first surface contacting the one surface of the substrate; and stacking the inorganic light emitting element separated at the separating on an array substrate to manufacture the inorganic light emitter.

Claims (28)

1 . A method for manufacturing an inorganic light emitter, the method comprising:

arranging an inorganic light emitting element comprising an n-type clad layer on one surface of a substrate;

separating the inorganic light emitting element from the substrate while forming an oxide layer on a first surface of the inorganic light emitting element by emitting laser light to the first surface under an atmosphere having an oxygen concentration higher than an oxygen concentration of air, the first surface contacting the one surface of the substrate;

stacking the inorganic light emitting element separated at the separating on an array substrate to manufacture the inorganic light emitter;

forming a conductive coupling layer; and

forming a cathode electrode that is coupled to the n-type clad layer that is under the oxide layer, the cathode electrode extends through a plurality of through-holes penetrating the oxide layer, wherein

the conductive coupling layer is a different material than the cathode electrode,

the cathode electrode directly contacts the n-type clad layer and the conductive coupling layer,

the oxide layer, the conductive coupling layer, and the cathode electrode are layered in this order on the first surface of the inorganic light emitting element, and

the conductive coupling layer is a different material than the oxide layer.

2 . The method for manufacturing the inorganic light emitter according to claim 1 , wherein the oxygen concentration is set to be in a range of 22% to 30% at the separating.

3 . The method for manufacturing the inorganic light emitter according to claim 1 , wherein

the arranging includes forming the inorganic light emitting element above a formation substrate, and

the separating includes separating the inorganic light emitting element from the formation substrate by emitting the laser light to the inorganic light emitting element above the formation substrate.

4 . The method for manufacturing the inorganic light emitter according to claim 3 , wherein the separating includes transferring the inorganic light emitting element onto the array substrate from the formation substrate such that a second surface of the inorganic light emitting element on an opposite side to the first surface makes contact with a surface of the array substrate, by emitting the laser light to the inorganic light emitting element in a state where the one surface of the formation substrate is made to face the surface of the array substrate.

5 . The method for manufacturing the inorganic light emitter according to claim 3 , wherein the separating includes

first separating of transferring the inorganic light emitting element onto a transfer substrate from the formation substrate such that a second surface of the inorganic light emitting element on an opposite side to the first surface makes contact with a surface of the transfer substrate, by emitting the laser light to the inorganic light emitting element in a state where the one surface of the formation substrate is made to face the surface of the transfer substrate; and

second separating of separating the inorganic light emitting element transferred onto the surface of the transfer substrate from the surface of the transfer substrate and transferring the inorganic light emitting element onto the array substrate.

6 . The method for manufacturing the inorganic light emitter according to claim 5 , wherein the second separating includes transferring the inorganic light emitting element onto the array substrate from the transfer substrate such that the first surface of the inorganic light emitting element makes contact with a surface of the array substrate, while forming a second oxide layer on the second surface of the inorganic light emitting element, by emitting the laser light to the inorganic light emitting element in a state where the surface of the transfer substrate is made to face the surface of the array substrate.

7 . The method for manufacturing the inorganic light emitter according to claim 5 , wherein the second separating includes transferring the inorganic light emitting element onto the array substrate from the transfer substrate by pressurizing the first surface of the inorganic light emitting element above the transfer substrate while making the first surface contact with a surface of the array substrate.

8 . The method for manufacturing the inorganic light emitter according to claim 3 , wherein the inorganic light emitting element is configured by stacking, above the formation substrate, the n-type clad layer, a light emitting layer, and a p-type clad layer in this order from a side of a surface of the formation substrate.

9 . The method for manufacturing the inorganic light emitter according to claim 1 , wherein the conductive coupling layer includes at least one of titanium and tin between the oxide layer of the light emitting element and an electrode provided above the array substrate.

10 . The method for manufacturing the inorganic light emitter according to claim 1 , wherein the conductive coupling layer is provided between the oxide layer and a lower surface of the cathode electrode.

11 . The method for manufacturing the inorganic light emitter according to claim 1 , wherein the cathode electrode is coupled to the n-type clad layer through the plurality of through-holes.

12 . The method for manufacturing the inorganic light emitter according to claim 1 , wherein the conductive coupling layer is provided under a lower surface of the cathode electrode without overlapping the through-holes of the oxide layer.

13 . The method for manufacturing the inorganic light emitter according to claim 1 , wherein

the conductive coupling layer includes a first member that is a tin layer and a second members that are made of titanium, and

the second members are dotted in the first member.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 2, 2025
From: JAPAN DISPLAY INC.
To: MAGNOLIA WHITE CORPORATION
Reel/Frame 071793/0491 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 24, 2021
From: IKEDA, MASANOBU; KANAYA, YASUHIRO
To: JAPAN DISPLAY INC.
Reel/Frame 057602/0078 →
Priority Claims (1)
JP 2019-068912 · Mar 29, 2019 · national
Continuity (2)
Continuation PCTJP2020013919 · Mar 27, 2020
Related Publication 20220013684A1 · Jan 13, 2022
References Cited (23)
US 6576536B1 · Babcock · 2003 [cited by examiner]
US 6740604B2 · Kelly et al. · 2004 [cited by applicant]
US 6974758B2 · Kelly et al. · 2005 [cited by applicant]
US 7713840B2 · Kelly et al. · 2010 [cited by applicant]
US 9666677B1 · Raring · 2017 [cited by examiner]
US 20040241934A1 · Inoue · 2004 [cited by applicant]
US 20050087743A1 · Ogihara et al. · 2005 [cited by applicant]
US 20100032701A1 · Fudeta · 2010 [cited by examiner]
US 20110220942A1 · Choi · 2011 [cited by examiner]
US 20130234192A1 · Kim · 2013 [cited by examiner]
US 20150041836A1 · Saito et al. · 2015 [cited by applicant]
US 20170236811A1 · Pokhriyal et al. · 2017 [cited by applicant]
US 20170373046A1 · Gardner · 2017 [cited by examiner]
US 20180114878A1 · Danesh · 2018 [cited by examiner]
US 20180138372A1 · Kim · 2018 [cited by examiner]
US 20190096864A1 · Huitema et al. · 2019 [cited by applicant]
US 20190131503A1 · Yahata · 2019 [cited by examiner]
CN 1536616A · 2004 [cited by applicant]
CN 107808913A · 2018 [cited by examiner]
JP 4285776 · 2009 [cited by applicant]
English language translation of CN-107808913-A (Year: 2017). [cited by examiner]
Chinese Office Action dated Apr. 27, 2024 in corresponding Chinese patent application No. 202080024767.1 (12 pages). [cited by applicant]
International Search Report issued in Application No. PCT/JP2020/013919, mailed Jun. 23, 2020. [cited by applicant]