Photoresist compositions and pattern formation methods
A polymer, comprising a first repeating unit derived from a first monomer comprising a single ester acetal group, and a second repeating unit derived from a second monomer comprising a plurality of ester acetal groups.
1. A polymer, comprising:
a first repeating unit derived from a first monomer comprising a single ester acetal group;
a second repeating unit derived from a second monomer comprising a plurality of ester acetal groups; and
a repeating unit comprising a lactone group, wherein the repeating unit comprising the lactone group is structurally different from the first repeating unit and the second repeating unit,
wherein the second monomer is of Formula (5):
wherein, in Formula (5),
R e and R f are each independently hydrogen, fluorine, cyano, or substituted or unsubstituted C 1-10 alkyl;
R 13 , R 14 , R 15 , and R 16 are each independently hydrogen, substituted or unsubstituted C 1-20 alkyl, substituted or unsubstituted C 3-20 cycloalkyl, substituted or unsubstituted C 3-20 heterocycloalkyl, substituted or unsubstituted C 6-20 aryl, substituted or unsubstituted C 7-30 arylalkyl, substituted or unsubstituted C 7-30 alkylaryl, substituted or unsubstituted C 3-20 heteroaryl, substituted or unsubstituted C 4-30 heteroarylalkyl, or substituted or unsubstituted C 4-30 alkylheteroaryl;
at least one of R 13 , R 14 , R 15 , or R 16 is not hydrogen;
R 13 and R 14 optionally together form a ring via a single bond or a divalent linking group;
R 15 and R 16 optionally together form a ring via a single bond or a divalent linking group; and
Z is a divalent linking group.
2. The polymer of claim 1 , wherein the first monomer and the second monomer each comprises carbon-carbon unsaturated vinylic group.
3. The polymer of claim 1 , wherein the first monomer is of Formula (1):
wherein,
R a is hydrogen, fluorine, cyano, substituted or unsubstituted C 1-10 alkyl;
R 1 and R 2 are each independently hydrogen, substituted or unsubstituted C 1-20 alkyl, substituted or unsubstituted C 3-20 cycloalkyl, substituted or unsubstituted C 3-20 heterocycloalkyl, substituted or unsubstituted C 6-20 aryl, substituted or unsubstituted C 7-30 arylalkyl, substituted or unsubstituted C 7-30 alkylaryl, substituted or unsubstituted C 3-20 heteroaryl, substituted or unsubstituted C 4-30 heteroarylalkyl, or substituted or unsubstituted C 4-30 alkylheteroaryl, wherein each of R 1 and R 2 optionally further comprises a divalent linking group as part of their structure;
R 1 and R 2 together optionally form a ring via a single bond or a divalent linking group, wherein the ring is substituted or unsubstituted;
R 3 is substituted or unsubstituted C 1-20 alkyl, substituted or unsubstituted C 3-20 cycloalkyl, or substituted or unsubstituted C 3-20 heterocycloalkyl, wherein R 3 optionally further comprises a divalent linking group as part of its structure; and
one of R 1 or R 2 optionally forms a ring together with R 3 via a single bond or a divalent linking group, wherein the ring is substituted or unsubstituted.
4. The polymer of claim 1 , further comprising a third repeating unit comprising an acid labile group, wherein the third repeating unit comprises a tertiary alkyl ester group.
5. The polymer of claim 1 , wherein the polymer further comprises a fourth repeating unit comprising a polar group, wherein the polar group is pendant to the backbone of the polymer.
6. A photoresist composition, comprising:
the polymer of claim 1 ;
a photoacid generator; and
a solvent.
7. The photoresist composition of claim 6 , further comprising a photo-decomposable quencher or a basic quencher.
8. A method for forming a pattern, the method comprising:
applying a layer of the photoresist composition of claim 6 on a substrate to provide a photoresist composition layer;
pattern-wise exposing the photoresist composition layer to activating radiation to provide an exposed photoresist composition layer; and
developing the exposed photoresist composition layer to provide a photoresist pattern.
9. The method of claim 8 , wherein the photoresist composition layer is exposed to 193 nm radiation or EUV radiation.
10. The photoresist composition of claim 6 , wherein the first monomer and the second monomer each comprises carbon-carbon unsaturated vinylic group.
11. The photoresist composition of claim 6 , wherein the first monomer is of Formula (1):
wherein,
R a is hydrogen, fluorine, cyano, substituted or unsubstituted C 1-10 alkyl;
R 1 and R 2 are each independently hydrogen, substituted or unsubstituted C 1-20 alkyl, substituted or unsubstituted C 3-20 cycloalkyl, substituted or unsubstituted C 3-20 heterocycloalkyl, substituted or unsubstituted C 6-20 aryl, substituted or unsubstituted C 7-30 arylalkyl, substituted or unsubstituted C 7-30 alkylaryl, substituted or unsubstituted C 3-20 heteroaryl, substituted or unsubstituted C 4-30 heteroarylalkyl, or substituted or unsubstituted C 4-30 alkylheteroaryl, wherein each of R 1 and R 2 optionally further comprises a divalent linking group as part of their structure;
R 1 and R 2 together optionally form a ring via a single bond or a divalent linking group, wherein the ring is substituted or unsubstituted;
R 3 is substituted or unsubstituted C 1-20 alkyl, substituted or unsubstituted C 3-20 cycloalkyl, or substituted or unsubstituted C 3-20 heterocycloalkyl, wherein R 3 optionally further comprises a divalent linking group as part of its structure; and
one of R 1 or R 2 optionally forms a ring together with R 3 via a single bond or a divalent linking group, wherein the ring is substituted or unsubstituted.
12. The photoresist composition of claim 6 , further comprising a third repeating unit comprising an acid-labile group, wherein the third repeating unit comprises a tertiary alkyl ester group.
13. The photoresist composition of claim 6 , wherein the polymer further comprises a fourth repeating unit comprising a polar group, wherein the polar group is pendant to the backbone of the polymer.
14. The method of claim 8 , wherein the first monomer and the second monomer each comprises carbon-carbon unsaturated vinylic group.
15. The method of claim 8 , wherein the first monomer is of Formula (1):
wherein,
R a is hydrogen, fluorine, cyano, substituted or unsubstituted C 1-10 alkyl;
R 1 and R 2 are each independently hydrogen, substituted or unsubstituted C 1-20 alkyl, substituted or unsubstituted C 3-20 cycloalkyl, substituted or unsubstituted C 3-20 heterocycloalkyl, substituted or unsubstituted C 6-20 aryl, substituted or unsubstituted C 7-30 arylalkyl, substituted or unsubstituted C 7-30 alkylaryl, substituted or unsubstituted C 3-20 heteroaryl, substituted or unsubstituted C 4-30 heteroarylalkyl, or substituted or unsubstituted C 4-30 alkylheteroaryl, wherein each of R 1 and R 2 optionally further comprises a divalent linking group as part of their structure;
R 1 and R 2 together optionally form a ring via a single bond or a divalent linking group, wherein the ring is substituted or unsubstituted;
R 3 is substituted or unsubstituted C 1-20 alkyl, substituted or unsubstituted C 3-20 cycloalkyl, or substituted or unsubstituted C 3-20 heterocycloalkyl, wherein R 3 optionally further comprises a divalent linking group as part of its structure; and
one of R 1 or R 2 optionally forms a ring together with R 3 via a single bond or a divalent linking group, wherein the ring is substituted or unsubstituted.
16. The method of claim 8 , further comprising a third repeating unit comprising an acid-labile group, wherein the third repeating unit comprises a tertiary alkyl ester group.
17. The method of claim 8 , wherein the polymer further comprises a fourth repeating unit comprising a polar group, wherein the polar group is pendant to the backbone of the polymer.