Contact and die attach metallization for silicon carbide based devices and related methods of sputtering eutectic alloys
A semiconductor device package includes a package substrate having a die attach region, a silicon carbide (SiC) substrate having a first surface including a semiconductor device layer thereon and a second surface that is opposite the first surface, and a die attach metal stack. The die attach metal stack includes a sputtered die attach material layer that attaches the second surface of the SiC substrate to the die attach region of the package substrate, where the sputtered die attach material layer comprises a void percent of about 15% or less. The sputtered die attach material layer may be formed using a sputter gas including at least one of krypton (Kr), xenon (Xe), or radon (Rn). The die attach metal stack may further include a metal interlayer that prevent contacts with a first barrier metal layer during a phase transition of the die attach material layer.
1. A method of fabricating a semiconductor device, the method comprising:
providing a package substrate comprising a die attach region;
providing a silicon carbide (SiC) substrate having a first surface including a semiconductor device layer thereon and a second surface that is opposite the first surface;
performing a sputtering process to deposit a die attach material layer on the second surface of the SiC substrate using a sputter gas comprising at least one of krypton (Kr), xenon (Xe), or radon (Rn); and
performing a die attach operation wherein a die attach metal stack including the die attach material layer attaches the second surface of the SiC substrate to the die attach region of the package substrate, wherein the die attach material layer comprises at least one of krypton (Kr), xenon (Xe), or radon (Rn) and has a void percent of about 15% or less.
2. The method of claim 1 ,
wherein the die attach operation comprises a phase transition of the die attach material layer to attach the second surface of the SiC substrate to a surface of the package substrate, wherein, responsive to the phase transition, the die attach material layer comprises the void percent of about 15% or less.
3. The method of claim 2 , wherein a contact area between the die attach material layer and the die attach region of the package substrate is greater than about one square millimeter.
4. The method of claim 2 , further comprising:
forming a first barrier metal layer on the second surface of the SiC substrate; and
forming a metal interlayer on the first barrier metal layer,
wherein performing the sputtering process deposits the die attach material layer on the metal interlayer, and wherein the metal interlayer reacts with the die attach material layer to prevent contact between the die attach material layer and the first barrier metal layer during the phase transition.
5. The method of claim 4 , wherein the die attach material layer comprises a eutectic or near eutectic alloy, and wherein the metal interlayer increases a melting point of the eutectic or near eutectic alloy by forming an alloy of the die attach material layer and the metal interlayer along an interface therebetween during the phase transition.
6. The method of claim 5 , wherein the metal interlayer comprises at least one of nickel (Ni), silver (Ag), palladium (Pd), or copper (Cu).
7. The method of claim 4 , wherein the die attach material layer comprises gold (Au), and wherein the package substrate comprises copper (Cu).
8. The method of claim 4 , further comprising:
forming a contact metal stack on the second surface of the SiC substrate prior to the sputtering process, wherein forming the contact metal stack comprises:
forming a metal adhesion layer on the second surface of the SiC substrate;
forming a second barrier metal layer on the metal adhesion layer; and
plating a contact metal layer on the second barrier metal layer.
9. The method of claim 4 , further comprising:
forming at least one contact on the semiconductor device layer opposite the SiC substrate; and
forming a via opening in the second surface that extends through the SiC substrate and toward the at least one contact,
wherein performing the sputtering process conformally deposits the die attach material layer on the metal interlayer along the second surface of the SiC substrate and within the via opening along sidewall surfaces thereof such that the via opening is unfilled.
10. The method of claim 2 , wherein a concentration of the at least one of Kr, Xe, or Rn in the sputter gas is greater than about 50 percent, or greater than about 75 percent.
11. The method of claim 10 , wherein the sputter gas comprises argon (Ar), wherein a concentration of the Ar in the sputter gas is less than about 50 percent, or less than about 25 percent.
12. The method of claim 10 , wherein:
prior to the phase transition, the die attach material layer comprises at least one of Kr, Xe, or Rn atoms therein based on the concentration of the at least one of Kr, Xe, or Rn in the sputter gas, respectively; and
responsive to the phase transition, the void percent of the die attach material layer is about 10% to about 5%, or about 5% or less.
13. A semiconductor device package, comprising:
a package substrate comprising a die attach region;
a silicon carbide (SiC) substrate having a first surface including a semiconductor device layer thereon and a second surface that is opposite the first surface; and
a die attach metal stack comprising a die attach material layer that attaches the second surface of the SiC substrate to the die attach region of the package substrate, wherein the die attach material layer comprises at least one of krypton (Kr), xenon (Xe), or radon (Rn) and has a void percent of about 15% or less.
14. The semiconductor device package of claim 13 , wherein the die attach metal stack further comprises:
a first barrier metal layer on the second surface of the SiC substrate; and
a metal interlayer between the first barrier metal layer and the die attach material layer, wherein the metal interlayer is configured to react with the die attach material layer to prevent contact between the first barrier metal layer and the die attach material layer during a phase transition thereof.
15. The semiconductor device package of claim 14 , wherein the die attach material layer comprises a eutectic or near eutectic alloy, and wherein the metal interlayer is configured to form an alloy of the die attach material layer and the metal interlayer along an interface therebetween that increases a melting point of the eutectic or near eutectic alloy.
16. The semiconductor device package of claim 15 , wherein the metal interlayer comprises at least one of nickel (Ni), silver (Ag), palladium (Pd), or copper (Cu).
17. The semiconductor device package of claim 14 , wherein the die attach material layer comprises gold (Au), and wherein the package substrate comprises copper (Cu).
18. The semiconductor device package of claim 13 , wherein the SiC substrate comprises a via opening in the second surface, and wherein at least a portion of the die attach material layer is on the second surface outside the via opening and has the void percent of about 15% or less.
19. A semiconductor device package, comprising:
a silicon carbide (SiC) substrate having a first surface including a semiconductor device layer thereon and a second surface that is opposite the first surface; and
a die attach metal stack comprising a die attach material layer on the second surface of the SiC substrate, wherein the die attach material layer is substantially free of Argon (Ar) and comprises at least one of krypton (Kr), xenon (Xe), or radon (Rn).
20. The semiconductor device package of claim 19 , wherein the die attach material layer is formed using a sputter gas comprising at least one of krypton (Kr), xenon (Xe), or radon (Rn).
21. The semiconductor device package of claim 20 , wherein the die attach material layer comprises more of the at least one of Kr, Xe, or Rn therein than Ar.
22. The semiconductor device package of claim 21 , wherein a concentration of the at least one of Kr, Xe, or Rn in the sputter gas is greater than about 50 percent, or greater than about 75 percent.
23. The semiconductor device package of claim 22 , wherein the sputter gas comprises Ar, and wherein a concentration of the Ar in the sputter gas is less than about 50 percent, or less than about 25 percent.
24. The semiconductor device package of claim 22 , wherein:
the die attach material layer comprises at least one of Kr, Xe, or Rn atoms therein in a concentration that is disproportionate to the concentration of the at least one of Kr, Xe, or Rn in the sputter gas, respectively; and
a void percent of the die attach material layer is about 10% to about 5%, or about 5% or less.
25. The semiconductor device package of claim 19 , further comprising:
a package substrate,
wherein the second surface of the SiC substrate is attached to a surface of the package substrate by performing a die attach operation comprising a phase transition of the die attach material layer, and wherein, responsive to the phase transition, the die attach material layer comprises a void percent of about 15% or less.
26. The semiconductor device package of claim 25 , further comprising:
a first barrier metal layer on the second surface of the SiC substrate; and
a metal interlayer on the first barrier metal layer,
wherein the die attach material layer is formed on the metal interlayer, and wherein the metal interlayer is configured to react with the die attach material layer to prevent contact between the die attach material layer and the first barrier metal layer during the phase transition.
27. The semiconductor device package of claim 26 , wherein the die attach material layer comprises a eutectic or near eutectic alloy, and wherein the metal interlayer is configured to form an alloy of the die attach material layer and the metal interlayer along an interface therebetween during the phase transition that increases a melting point of the eutectic or near eutectic alloy.
28. The semiconductor device package of claim 27 , wherein the metal interlayer comprises at least one of nickel (Ni), silver (Ag), palladium (Pd), or copper (Cu).
29. The semiconductor device package of claim 26 , wherein the die attach material layer comprises gold (Au), and wherein the package substrate comprises copper (Cu).
30. The semiconductor device package of claim 26 , further comprising:
at least one contact on the semiconductor device layer opposite the SiC substrate; and
a via opening in the second surface that extends through the SiC substrate and toward the at least one contact,
wherein the die attach material layer is conformally deposited on the metal interlayer along the second surface of the SiC substrate and within the via opening along sidewall surfaces thereof such that the via opening is unfilled.
31. A semiconductor device package, comprising:
a package substrate comprising a die attach region;
a silicon carbide (SiC) substrate having a first surface including a semiconductor device layer thereon, and a second surface that is opposite the first surface and comprises a via opening therein; and
a die attach material layer between the second surface and the die attach region, wherein the die attach material layer comprises at least one noble gas element, and wherein at least a portion of the die attach material layer is outside the via opening and comprises a void percent of about 15% or less.
32. The semiconductor device package of claim 31 , wherein the die attach material layer is formed using a sputter gas, and the die attach material layer comprises an element having an atomic mass that is within about ±15% to about ±60% of an atomic mass of an element of the sputter gas.
33. The semiconductor device package of claim 31 , wherein the at least one noble gas element is heavier than argon (Ar).