Image sensing device with reduced power consumption by constraining the photocurrent
An image sensing device may include: a substrate including a back side and a front side; imaging pixels configured to receive incident light from the back side and each structured to produce photocharge in response to the received incident light at each imaging pixel; a plurality of taps located at a depth from the front side of the substrate and configured to generate a current within the substrate and capture photocharge generated by the imaging pixels and migrated by the current, wherein the plurality of taps is distributed in the imaging pixels such that two or more of the plurality of taps are located within each imaging pixel; and a capping region formed in each imaging pixel to surround the two or more taps included in each imaging pixel, wherein a lower portion of the capping region is spaced apart from the back side by a predetermined distance.
1. An image sensing device comprising:
a substrate including a back side structured to receive incident light and a front side facing away from the back side;
imaging pixels configured to receive the incident light from the back side and each structured to produce photocharge in response to the received incident light at each imaging pixel;
a plurality of taps located at a first depth from the front side of the substrate and configured to generate a current within the substrate and capture photocharge which is generated by the imaging pixels and migrated by the current, wherein the plurality of taps are distributed in the imaging pixels such that two or more of the plurality of taps are located within each imaging pixel; and
a capping region formed in each imaging pixel and structured to surround the two or more taps included in each imaging pixel, wherein a lower portion of the capping region is spaced apart from the back side by a distance,
wherein the capping region includes, at a center of the capping region, a first portion structured to be formed to a second depth from the front side, and at a center of each of the plurality of taps, a second portion structured to be formed to a third depth from the front side that is smaller than the second depth.
2. The image sensing device of claim 1 , wherein each imaging pixel of the image sensing device including the two or more taps comprises:
a first control node and a second control node spaced apart from each other and configured to generate the current within the substrate; and
a first detection node disposed adjacent to the first control node and a second detection node disposed adjacent to the second control node, each of the first detection node and the second detection node configured to capture the photocharge generated by each imaging pixel in response the incident light at the imaging pixel.
3. The image sensing device of claim 2 , wherein the capping region, the first control node and the second control node are doped with a first conductive-type impurity.
4. The image sensing device of claim 2 , wherein the capping region has a lower doping concentration than the first control node and the second control node.
5. The image sensing device of claim 2 , further comprising:
a first node isolation region disposed between the first control node and the first detection node to electrically isolate the first control node and the first detection node from each other; and
a second node isolation region disposed between the second control node and the second detection node to electrically isolate the second control node and the second detection node from each other.
6. The image sensing device of claim 5 , further comprising a microlens disposed under the back side and arranged to overlap the taps.
7. The image sensing device of claim 2 , further comprising:
a first auxiliary control node disposed under the first control node, and having a lower doping concentration than the first control node; and
a second auxiliary control node disposed under the second control node, and having a lower doping concentration than the second control node.
8. The image sensing device of claim 7 , wherein lower portions of the first and second auxiliary control nodes are each formed to a fourth depth from the front side that is greater than the first depth from the front side.
9. The image sensing device of claim 1 , further comprising:
a pixel transistor region comprising pixel transistors configured to generate a pixel signal based on the captured photocharges; and
an epitaxial region disposed between the pixel transistor region and the capping region.
10. The image sensing device of claim 9 , wherein the epitaxial region is disposed between the capping region of a first pixel and the capping region of a second pixel adjacent to the first pixel.
11. The image sensing device of claim 9 , wherein the epitaxial region is doped with a first conductive-type impurity.
12. The image sensing device of claim 11 , wherein the epitaxial region has a lower doping concentration than the capping region.
13. The image sensing device of claim 9 , wherein the epitaxial region is doped with a second conductive-type impurity.
14. An image sensing device comprising:
a substrate; and
a first pixel and a second pixel adjacent to each other, disposed at the substrate and structured to convert incident light into electrical signals, respectively,
wherein each of the first and second pixels comprises:
a plurality of taps each configured to generate a current within the substrate, and capture photocharges that are generated by the incident light and migrated by the current; and
a capping region structured to surround the taps,
wherein the capping region of the first pixel and the capping region of the second pixel are physically isolated from each other, and
wherein the capping region includes, at a center of the capping region, a first portion structured to be formed to a first depth from a front side of the substrate, and at a center of each of the plurality of taps, a second portion structured to be formed to a second depth from the front side that is smaller than the first depth.
15. The image sensing device of claim 14 , further comprising an epitaxial region disposed between the capping region of the first pixel and the capping region of the second pixel.
16. The image sensing device of claim 15 , wherein the capping region and the epitaxial region are doped with a first conductive-type impurity, and
the epitaxial region has a lower doping concentration than the capping region.
17. The image sensing device of claim 15 , wherein the capping region is doped with a first conductive-type impurity, and the epitaxial region is doped with a second conductive-type impurity different from the first conductive-type impurity.