IP Library Granted Patent US 11,721,399
Granted Patent B2
US 11,721,399 · App. 17/504,467 · Granted Aug 8, 2023

Memory system with dynamic calibration using a trim management mechanism

Inventors: Michael Sheperek (Longmont, CO); Larry J. Koudele (Erie, CO); Steve Kientz (Westminster, CO)
Assignee: Micron Technology, Inc.
G11C16/26G06F3/0604G06F3/0659G06F3/0679G11C11/5628G11C11/5642G11C11/5671G11C16/0483
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Quick Facts
Patent No.
US 11,721,399
App. No.
17/504,467
Granted
Aug 8, 2023
Kind
B2
Abstract

A system comprises a memory device comprising a plurality of memory cells; and a processing device coupled to the memory device, the processing device configured to manage optimization target data that at least initially includes read levels in addition to a target trip, wherein the optimization data is managed based on iteratively calibrating the read levels and removing the calibrated levels from the optimization target data.

Claims (71)

1. An apparatus, comprising:

a plurality of memory cells configured to store data; and

a processing device coupled to the plurality of memory cells, the processing device configured to manage optimization target data that at least initially includes read levels in addition to a target trim, wherein

the target trim corresponds to an adjustment level used to adjust voltage for reading a portion of the plurality of memory cells; and

the optimization target data is managed based on

iteratively calibrating the read levels based on associated results of reading the stored data; and

removing one or more calibrated read levels from the optimization target data when the one or more calibrated read levels satisfy a target condition.

2. The apparatus of claim 1 , wherein the processing device is configured to determine a further updated set of read results after the one or more calibrated read levels satisfy the calibration condition, wherein the further updated set of the read results are determined without the target trim.

3. The apparatus of claim 1 , wherein the read levels are tracked via the optimization target data that at least initially includes at least one read level in addition to the target trim.

4. The apparatus of claim 3 , wherein:

the optimization target data tracks the read levels according to page stacks; and

the processing device is configured to remove the page stack that comprises the target trim when trims within the page stack are calibrated.

5. The apparatus of claim 4 , wherein the processing device is configured to:

individually calibrate the trims within the page stack; and

calibrate the trims within the page stack as a single set after the trims have been individually calibrated.

6. The apparatus of claim 5 , wherein the processing device is configured to calibrate the trims within the page stack as a set by:

determining the read results based on reading a subset of memory cells according to the trims within the page stack;

calculating an error measure based on aggregating the set of read results;

determining an adjustment direction based on the error measure; and

adjusting the trims within the page stack according to the adjustment direction until the calibration condition is satisfied.

7. The apparatus of claim 1 , wherein the processing device is configured to calibrate the read level based on:

selecting the target trim as one of the read levels within the optimization target data;

determining the read results based on reading a subset of memory cells using the target trim, an upper read level greater than the target trim, and a lower read level less than the target trim;

calculating a set of error measures corresponding to the set of read results, wherein the set of error measures comprises error measures that correspond to the target trim, the upper read level, and the lower read level;

calculating a first difference measure and a second difference measure based on the set of error measures, wherein the first difference measure is a difference between the error measures of the upper read level and the target trim and the second difference measure is a difference between the error measures of the lower read level and the target trim;

determining an update direction corresponding to lower of the first difference measure and the second difference measure, wherein the update direction is for decreasing the target trim when the first difference measure is lower or for increasing the target trim when the second difference measure is lower; and

adjusting the target trim according to the update direction.

8. The apparatus of claim 6 , wherein the processing device is configured to:

store a previous direction at a previous iteration, wherein the previous direction is the update direction determined at the previous iteration preceding a current iteration;

determine the update direction for the current iteration; and

determine that the target trim satisfies the calibration condition when the update direction for the current iteration differs from the previous direction of the previous iteration.

9. The apparatus of claim 1 , wherein the processing device is configured to remove the one or more calibrated read levels based on generating a trim removal indicator for the target trim when the target trim satisfies the calibration condition.

10. The apparatus of claim 1 , wherein the processing device is configured to remove the one or more calibrated read levels based on generating a reduced trim data for replacing the optimization target data, wherein the reduced trim data comprises trims in the optimization target data without the one or more calibrated read levels.

11. The apparatus of claim 1 , wherein the processing device is configured to remove the one or more calibrated read levels when the target trim satisfies the calibration condition and independent of a calibration status of other read levels within the optimization target data.

12. A method for operating an apparatus that includes a plurality of memory cells configured to store data, the method comprising:

iteratively calibrating read levels used to read the stored data based on corresponding read results, wherein

the read levels are tracked via optimization target data that at least initially includes at least one read level in addition to a target trim, and

the target trim corresponds to an adjustment level used to adjust voltage for reading a portion of the plurality of memory cells; and

removing one or more calibrated read levels from the optimization target data when the calibrated read level satisfies a calibration condition.

13. The method of claim 12 , further comprising:

tracking the read levels using the optimization target data, wherein the read levels are organized according to page stacks that each correspond to a page type, wherein

removing the calibrated read level comprises removing the page stack when the read levels in the page stack are calibrated.

14. The method of claim 13 , wherein calibrating the read levels comprises:

individually calibrating the trims within the page stack; and

further calibrating the trims within the page stack as a single set after the trims have been individually calibrated.

15. The method of claim 14 , wherein calibrating the trims within the page stack as a single set comprises iteratively:

determining the read results based on reading a subset of memory cells according to the trims within the page stack;

calculating an error measure based on aggregating the set of read results;

determining an adjustment direction based on the error measure; and

adjusting the trims within the page stack as a single set according to the adjustment direction until the calibration condition is satisfied.

16. The method of claim 12 , wherein calibrating the read levels comprises:

selecting the target trim within the optimization target data;

determining a set of read results based on reading a subset of memory cells using the target trim, an upper read level greater than the target trim, and a lower read level less than the target trim;

calculating a set of error measures corresponding to the set of read results, wherein the set of error measures comprises error measures that correspond to the target trim, the upper read level, and the lower read level;

calculating a first difference measure and a second difference measure based on the set of error measures, wherein the first difference measure is a difference between the error measures of the upper read level and the target trim and the second difference measure is a difference between the error measures of the lower read level and the target trim;

determining an update direction corresponding to lower of the first difference measure and the second difference measure, wherein the update direction is for decreasing the target trim when the first difference measure is lower or for increasing the target trim when the second difference measure is lower; and

adjusting the target trim according to the update direction.

17. The method of claim 16 , further comprising:

storing a previous direction at a previous iteration, wherein the previous direction is the update direction determined at the previous iteration preceding a current iteration;

wherein:

determining the update direction comprises determining the update direction for the current iteration; and

removing the calibrated read level comprises removing the target trim when the update direction for the current iteration differs from the previous direction of the previous iteration.

18. The method of claim 12 , wherein:

removing the calibrated read level comprises generating a trim removal indicator for the target trim when the target trim satisfies the calibration condition; and

further comprising:

determining a subsequent set of read results while ignoring the calibrated read level corresponding to the trim removal indicator.

19. The method of claim 12 , wherein:

removing the calibrated read level comprises generating a reduced trim data for replacing the optimization target data, wherein the reduced trim data includes trims in the optimization target data without the calibrated read level; and

further comprising:

determining a set of subsequent results based on reading a subset of memory cells according to the reduced trim data instead of the optimization target data after calibration of the calibrated read level.

20. The method of claim 12 , wherein removing the calibrated read level comprises removing the calibrated read level independent of a calibration status of other read levels within the optimization target data.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 18, 2021
From: SHEPEREK, MICHAEL; KIENTZ, STEVE; KOUDELE, LARRY J.
To: MICRON TECHNOLOGY, INC.
Reel/Frame 057826/0015 →
Continuity (3)
Continuation 16775099 · Jan 28, 2020
Continuation 15981810 · May 16, 2018
Related Publication 20220036957A1 · Feb 3, 2022