Band-pass filter for stacked sensor
In some embodiments, the present disclosure relates to an integrated chip structure. The integrated chip structure includes an image sensor disposed within a first substrate. A first band-pass filter and a second band-pass filter are disposed on the first substrate. A dielectric structure is disposed on the first substrate. The dielectric structure is laterally between the first band-pass filter and the second band-pass filter and laterally abuts the first band-pass filter and the second band-pass filter.
1. An integrated chip structure, comprising:
an image sensor disposed within a first substrate;
a first band-pass filter disposed on the first substrate;
a second band-pass filter disposed on the first substrate;
a dielectric structure disposed on the first substrate, wherein the dielectric structure is laterally between the first band-pass filter and the second band-pass filter and laterally abuts the first band-pass filter and the second band-pass filter; and
wherein the first band-pass filter comprises a plurality of different layers having sidewalls laterally contacting one another along vertically extending interfaces.
2. The integrated chip structure of claim 1 , wherein the first band-pass filter and the second band-pass filter have heights that are substantially equal to a height of the dielectric structure.
3. The integrated chip structure of claim 1 , wherein the plurality of different layers comprise a first layer and a second layer, the first layer having a first sidewall contacting the dielectric structure and an opposing second sidewall contacting a third sidewall of the second layer along a vertically extending interface continuously extending from a bottom of the second layer to a top of the second layer.
4. The integrated chip structure of claim 1 , wherein bottommost surfaces of the plurality of different layers are substantially co-planar with a bottommost surface of the dielectric structure.
5. The integrated chip structure of claim 1 , wherein a bottommost surface of the dielectric structure contacts the first substrate.
6. The integrated chip structure of claim 1 , wherein the dielectric structure comprises silicon dioxide.
7. An integrated chip structure, comprising:
an image sensor comprising a first substrate having a plurality of pixels;
a band-pass filter comprising a plurality of band-pass filter layers provided on the first substrate, the plurality of band-pass filter layers being configured to transmit, to the image sensor, light that is emitted by an object;
a dielectric structure provided on the first substrate and on a same plane as the plurality of band-pass filter layers; and
wherein the plurality of band-pass filter layers respectively extend to a bottom of the band-pass filter, the bottom of the band-pass filter facing the first substrate.
8. The integrated chip structure of claim 7 , wherein the dielectric structure comprises an insulating material.
9. The integrated chip structure of claim 7 , wherein bottommost surfaces of the plurality of band-pass filter layers are substantially co-planar with a bottommost surface of the dielectric structure facing the first substrate.
10. The integrated chip structure of claim 7 , wherein the plurality of band-pass filter layers respectively are a material that is different than a neighboring one of the plurality of band-pass filter layers.
11. The integrated chip structure of claim 7 , further comprising:
one or more color filters disposed over the first substrate and the plurality of band-pass filter layers; and
one or more micro-lenses disposed over the one or more color filters.
12. The integrated chip structure of claim 7 , wherein the plurality of band-pass filter layers comprise a first band-pass filter layer having a first sidewall contacting the dielectric structure and a second band-pass filter layer having a second sidewall contacting the first band-pass filter layer.
13. An integrated chip structure, comprising:
an image sensor disposed within a first substrate;
a band-pass filter disposed on the first substrate, wherein the band-pass filter comprises a plurality of different layers having sidewalls that are laterally offset from one another; and
a dielectric structure disposed on the first substrate and laterally adjacent to the band-pass filter.
14. The integrated chip structure of claim 13 , wherein a side surface of the dielectric structure contacts a side surface of the band-pass filter.
15. The integrated chip structure of claim 13 , wherein the plurality of different layers vertically overlap one another.
16. The integrated chip structure of claim 13 , wherein the plurality of different layers have bottommost surfaces that are substantially co-planar.
17. The integrated chip structure of claim 13 , wherein bottommost surfaces the plurality of different layers have substantially equal widths.
18. The integrated chip structure of claim 13 , wherein the band-pass filter and the dielectric structure both contact the first substrate.
19. The integrated chip structure of claim 13 , wherein the plurality of different layers respectively have a rectangular shape.
20. The integrated chip structure of claim 13 , wherein a thickness of the dielectric structure and the band-pass filter are the same.