Systems and methods for semiconductor chip surface topography metrology
Embodiments of systems and methods for measuring a surface topography of a semiconductor structure are disclosed. In certain examples, a plurality of interference signals, each corresponding to a respective one of a plurality of positions on a surface of the semiconductor structure, are measured. Calibration signals, associated with a baseline region corresponding to a first category of a plurality of categories and a calibrated region corresponding to a second category of the plurality of categories, are measured. A surface height offset, associated with the baseline region and the calibrated region, is determined based on original surface heights and the calibration signals. The original surface heights are determined based on the plurality of interference signals corresponding to the baseline region and the calibrated region. The surface topography of the semiconductor structure is characterized based, at least in part, on the surface height offset and the original surface heights.
1. A method for measuring a surface topography of a semiconductor structure, comprising:
measuring, by an interferometer, a plurality of interference signals each corresponding to a respective one of a plurality of positions on a surface of the semiconductor structure;
measuring calibration signals associated with a baseline region corresponding to a first category of a plurality of categories and a calibrated region corresponding to a second category of the plurality of categories, the plurality of categories being obtained according to classification of a plurality of spectrum signals each corresponding to the respective one of the plurality of positions on the surface of the semiconductor structure or classification of the plurality of interference signals, and each of the plurality of categories corresponding to a region having a same material on the surface of the semiconductor structure;
determining, by at least one processor, a surface height offset, associated with the baseline region and the calibrated region, based on differences between original surface heights and calibrated surface heights that are based on the calibration signals, the original surface heights being determined based on the plurality of interference signals corresponding to the baseline region and the calibrated region, and the calibration signals comprising surface topography information of a higher level of precision than the interference signals; and
characterizing, by the at least one processor, the surface topography of the semiconductor structure based, at least in part, on the surface height offset and the original surface heights.
2. The method of claim 1 , wherein characterizing the surface topography comprises calculating a calibrated surface height at a position of the positions on the surface of the semiconductor structure based, at least in part, on an original surface height corresponding to an interference signal at the position and a surface height offset of one category of the categories in which the interference signal at the position is classified.
3. The method of claim 1 , wherein measuring the calibration signals comprises measuring the calibration signals based on a calibration pattern that covers the baseline region and the calibrated region.
4. The method of claim 3 , wherein measuring the calibration signals based on the calibration pattern comprises measuring, through a scanning probe microscopy (SPM) or an electron microscope, the calibration signals based on the calibration pattern, and averaging the of calibration signals according to the baseline region and the calibrated region, respectively.
5. The method of claim 1 , further comprising:
designating a surface baseline to the baseline region, the surface baseline being the surface height offset of the baseline region, wherein: determining the surface height offset further comprises determining surface height offsets of each category of the categories with respect to the surface baseline.
6. The method of claim 1 , wherein the baseline region comprises one of:
a substrate region;
a region larger than the calibrated region at the semiconductor structure;
a region corresponding to one of the categories having a largest number of the plurality of interference signals; and
a largest region having a same material corresponding to one of the categories.
7. The method of claim 1 , further comprising at least one of:
transforming, through the at least one processor, the plurality of interference signals into the plurality of spectrum signals; or
measuring, through a spectrometer, the plurality of spectrum signals.
8. The method of claim 1 , wherein each of the plurality of interference signals comprises an interference fringe of low coherent interferometry, and each of the plurality of spectrum signals comprises a reflectance spectrum.
9. The method of claim 1 , wherein at least part of the surface of the semiconductor structure comprises a transparent layer.
10. The method of claim 1 , further comprising:
classifying, using a model, the plurality of interference signals or the plurality of spectrum signals.
11. The method of claim 10 , wherein classifying the plurality of interference signals or the plurality of spectrum signals comprises:
clustering the plurality of interference signals into a first plurality of clusters, and adjusting the first plurality of clusters to become the plurality of categories based, at least in part, on a design of the semiconductor structure, such that each of the categories corresponds to a respective region having the same material; or
clustering the plurality of spectrum signals into a second plurality of clusters, and adjusting the second plurality of clusters to become the plurality of categories based, at least in part, on the design of the semiconductor structure, such that each of the categories corresponds to a respective region having the same material.
12. The method of claim 1 , wherein each of the calibration signals is associated with a topographic height determined through a scanning probe microscopy (SPM) or an electron microscope.
13. The method of claim 1 , further comprising:
generating an original height map based, at least in part, on the plurality of interference signals;
generating a spectrum map based, at least in part, on the plurality of spectrum signals;
transforming the spectrum map into a classification map based, at least in part, on the plurality of spectrum signals and the plurality of categories corresponding to the spectrum signals; and
generating a calibrated height map from the original height map based, at least in part, on the surface height offset and the classification map.
14. A system for measuring a surface topography of a semiconductor structure, comprising:
an interferometer configured to provide a plurality of interference signals each corresponding to a respective one of a plurality of positions on a surface of the semiconductor structure; and
at least one processor configured to:
receive a plurality of calibration signals associated with a baseline region corresponding to a first one of a plurality of categories and a calibrated region corresponding to a second one of the plurality of categories, the plurality of categories being obtained according to classification of a plurality of spectrum signals each corresponding to the respective one of the plurality of positions on the surface of the semiconductor structure or classification of the plurality of interference signals, and each of the plurality of categories corresponding to a region having a same material on the surface of the semiconductor structure;
determine a surface height offset, associated with the baseline region and the calibrated region, based on differences between original surface heights and calibrated surface heights that are based on the calibration signals, the original surface heights being determined based on the plurality of interference signals corresponding to the baseline region and the calibrated region, and the calibration signals comprising surface topography information of a higher level of precision than the interference signals; and
characterize the surface topography of the semiconductor structure based, at least in part, on the surface height offset and the original surface heights.
15. The system of claim 14 , wherein the at least one processor is configured to calculate a calibrated surface height at one position of the positions on the surface of the semiconductor structure based, at least in part, on an original surface height corresponding to an interference signal at the position and a surface height offset of one category of the categories in which the interference signal at the position is classified.
16. The system of claim 14 , comprising:
a scanning probe microscopy (SPM) or an electron microscope configured to provide the calibration signals based on a calibration pattern, wherein the at least one processor is configured to average the calibration signals according to the baseline region and the calibrated region, respectively.
17. The system of claim 14 , wherein the at least one processor is configured to:
designate a surface baseline to the baseline region, the surface baseline being the surface height offset of the baseline region; and
determine surface height offsets of each category of the categories with respect to the surface baseline.
18. The system of claim 14 , wherein the at least one processor is configured to:
generate an original height map based, at least in part, on the plurality of interference signals;
generate a spectrum map based, at least in part, on the plurality of spectrum signals;
transform the spectrum map into a classification map based, at least in part, on the plurality of spectrum signals and the plurality of categories corresponding to the plurality of spectrum signals; and
generate a calibrated height map from the original height map based, at least in part, on the surface height offset and the classification map.
19. A non-transitory computer-readable storage device having instructions stored thereon that, when executed by at least one computing device, cause the at least one computing device to perform operations comprising:
receiving a plurality of interference signals each corresponding to a respective one of a plurality of positions on a surface of a semiconductor structure, the plurality of interference signals being measured through an interferometer;
receiving calibration signals associated with a baseline region corresponding to a first one of a plurality of categories and a calibrated region corresponding to a second one of the plurality of categories, the plurality of categories being obtained according to classification of a plurality of spectrum signals each corresponding to the respective one of the plurality of positions on the surface of the semiconductor structure or classification of the plurality of interference signals, and each of the plurality of categories corresponding to a region having a same material on the surface of the semiconductor structure;
determining a surface height offset, associated with the baseline region and the calibrated region, based on differences between original surface heights and calibrated surface heights that are based on the calibration signals, the original surface heights being determined based on the plurality of interference signals corresponding to the baseline region and the calibrated region, and the calibration signals comprising surface topography information of a higher level of precision than the interference signals; and
characterizing a surface topography of the semiconductor structure based, at least in part, on the surface height offset and the original surface heights.
20. The non-transitory computer-readable storage device of claim 19 , wherein the instructions, when executed by the at least one computing device, further cause the at least one computing device to perform operations comprising:
generating an original height map based, at least in part, on the plurality of interference signals;
generating a spectrum map based, at least in part, on the plurality of spectrum signals;
transforming the spectrum map into a classification map based, at least in part, on the plurality of spectrum signals and the plurality of categories corresponding to the plurality of spectrum signals; and
generating a calibrated height map from the original height map based, at least in part, on the surface height offset and the classification map.