High radiation detection performance from photoactive semiconductor single crystals
Methods and devices for detecting incident radiation are provided. The methods and devices use high quality single-crystals of photoactive semiconductor compounds in combination with metal anodes and metal cathodes that provide for enhanced photodetector performance.
1. A device for the detection of incident radiation comprising:
a photoactive single-crystalline semiconductor selected from: Hg 3 Q 2 X 2 , where Q represents a chalcogen atom or a combination of chalcogen atoms and X represents a halogen atom or a combination of halogen atoms; Tl 6 BI 4 , wherein B is sulfur or selenium; and A 2 P 2 X 6 , where A represents Pb or Sn and X represents S or Se;
at least one metal anode in electrical communication with the photoactive single-crystalline semiconductor, wherein the metal anode is selected from the group consisting of a gallium anode, a chromium anode, a titanium anode, an indium anode, an indium-calcium alloy anode, a lead anode, an aluminum anode, a magnesium anode, a hafnium anode, a bismuth anode and an anode comprising an alloy of two or more of gallium, chromium, titanium, indium, lead, aluminum, magnesium, hafnium anode, and bismuth;
at least one metal cathode in electrical communication with the photoactive single-crystalline semiconductor, wherein the metal cathode is selected from a gold cathode, a platinum cathode, a nickel cathode, an osmium cathode, a palladium cathode, a selenium cathode, and a cathode comprising an alloy of two or more of gold, platinum, nickel, osmium, palladium, and selenium;
a detector configured to measure a signal generated by electron-hole pairs that are formed when the photoactive single-crystalline semiconductor is exposed to incident gamma radiation and/or nuclear radiation.
2. The device of claim 1 , wherein the metal anode is the gallium anode.
3. The device of claim 2 , wherein the metal cathode is the gold cathode.
4. The device of claim 2 , wherein the metal cathode is the platinum cathode.
5. The device of claim 1 , wherein the metal anode is the bismuth anode.
6. The device of claim 1 , wherein the metal anode is the indium anode.
7. The device of claim 6 , wherein the metal cathode is the gold cathode.
8. The device of claim 6 , wherein the metal cathode is the platinum cathode.
9. The device of claim 1 , wherein the metal anode is the aluminum anode.
10. The device of claim 9 , wherein the metal cathode is the gold cathode.
11. The device of claim 9 , wherein the metal cathode is the platinum cathode.
12. The device of claim 1 , wherein the metal anode is the lead anode.
13. The device of claim 12 , wherein the metal cathode is the gold cathode.
14. The device of claim 12 , wherein the metal cathode is the platinum cathode.
15. The device of claim 1 , wherein the metal anode is the magnesium anode.
16. The device of claim 15 , wherein the metal cathode is a gold cathode.
17. The device of claim 15 , wherein the metal cathode is the platinum cathode.
18. The device of claim 1 , wherein the device is encapsulated in wax or a polymer coating.
19. A method for detecting incident radiation using
a device for comprising:
a photoactive single-crystalline semiconductor selected from Hg 3 Q 2 X 2 , where Q represents a chalcogen atom or a combination of chalcogen atoms and X represents a halogen atom or a combination of halogen atoms; Tl 6 BI 4 , wherein B is sulfur or selenium; and A 2 P 2 X 6 , where A represents Pb or Sn and X represents S or Se;
at least one metal anode in electrical communication with the single-crystalline semiconductor, wherein the metal anode is selected from the group consisting of a gallium anode, a chromium anode, a titanium anode, an indium anode, an indium-calcium alloy anode, a lead anode, an aluminum anode, a magnesium anode, a hafnium anode, a bismuth anode and an anode comprising an alloy of two or more of gallium, chromium, titanium, indium, lead, aluminum, magnesium, hafnium anode, and bismuth;
at least one metal cathode in electrical communication with the photoactive single-crystalline semiconductor, wherein the metal cathode is selected from a gold cathode, a platinum cathode, a nickel cathode, an osmium cathode, a palladium cathode, a selenium cathode, and an anode comprising two or more of gold, platinum, nickel, osmium, palladium, and selenium;
a detector configured to measure a signal generated by electron-hole pairs that are formed when the material is exposed to incident gamma radiation and/or nuclear radiation, the method comprising:
exposing the photoactive, single-crystalline semiconductor to incident gamma radiation and/or nuclear radiation, wherein the material absorbs the incident gamma radiation and/or nuclear radiation and electron-hole pairs are generated in the material; and
measuring at least one of the energy or intensity of the absorbed incident gamma radiation by detecting the generated electrons, holes, or both.
20. A device for the detection of incident radiation comprising:
single-crystalline CsPbX 3 , where X represents Br or Cl;
a bismuth metal anode in electrical communication with the CsPbX 3 ;
at least one metal cathode in electrical communication with the CsPbX 3 , wherein the at least one metal cathode is selected from a gold cathode, a platinum cathode, a nickel cathode, an osmium cathode, a palladium cathode, a selenium cathode, and a cathode comprising two or more of gold, platinum, nickel, osmium, palladium, and selenium; wherein the anode and cathode are configured to apply an electric field across the material; and
a detector configured to measure a signal generated by electron-hole pairs that are formed when the material is exposed to incident gamma radiation and/or nuclear radiation.
21. The device of claim 20 , wherein the metal cathode is the gold cathode.
22. The device of claim 20 , wherein X is Br.
23. The device of claim 22 , wherein the metal cathode is the gold cathode.