ARTICLES COATED WITH CRACK-RESISTANT FLUORO-ANNEALED FILMS AND METHODS OF MAKING
Articles and methods relating to coatings having superior plasma etch-resistance and which can prolong the life of RIE components are provided. An article has a vacuum compatible substrate and a protective film overlying at least a portion of the substrate. The film comprises a fluorinated metal oxide containing yttrium wherein the yttrium oxide is deposited using an AC power source. The film has a fluorine atomic % of at least 10 at a depth of 30% of the total thickness of the film and the film has no subsurface cracks below the surface of the film visible when using a laser confocal microscope to view the full depth of the film at a magnification of 1000×.
1 . An article comprising:
a substrate; and
a protective film overlying at least a portion of the substrate,
wherein the film comprises a fluorinated metal oxide containing yttrium,
wherein the film has a fluorine atomic % of at least 10 at a depth of 30% of the total thickness of the film, and
wherein the film has no subsurface cracks below the surface of the film visible when using a laser confocal microscope to view the full depth of the film at a magnification of 1000×.
2 . The article of claim 1 , wherein after fluoro-annealing, the film has no surface cracks on the surface of the film visible when viewing the surface of the film with a laser confocal microscope at a magnification of 400×.
3 . The article of claim 1 , wherein the substrate is alumina.
4 . The article of claim 1 , wherein the substrate is silicon.
5 . The article of claim 1 , wherein the film has a fluorine atomic % of at least 20 at a depth of 30% of the total thickness of the film.
6 . The article of claim 1 , wherein the film has a fluorine atomic % of at least 30 at a depth of 30% of the total thickness of the film.
7 . The article of claim 1 , wherein the film has a fluorine atomic % of at least 10 at a depth of 50% of the total thickness of the film.
8 . The article of claim 1 , wherein the film has a fluorine atomic % of at least 20 at a depth of 50% of the total thickness of the film.
9 . The article of claim 1 , wherein the film has a fluorine atomic % of at least 30 at a depth of 50% of the total thickness of the film.
10 . A method comprising:
depositing a metal oxide containing yttrium onto a substrate using a physical vapor deposition technique using an alternating current (AC) power supply, the metal oxide forming a film overlying the substrate; and
fluoro-annealing the film,
wherein after fluoro-annealing, the film has a fluorine atomic % of at least 10 at a depth of 30% of the total thickness of the film.
11 . The method of claim 10 , wherein after fluoro-annealing, the film has no surface cracks on the surface the film visible when viewing the surface of the film with a laser confocal microscope at a magnification of 400×.
12 . The method of claim 10 , wherein after fluoro-annealing, the film has no subsurface cracks below the surface of the film visible when using a laser confocal microscope to view the full depth of the film at a magnification of 1000×.
13 . The method of claim 10 , wherein after fluoro-annealing, the film has a fluorine atomic % of at least 20 at a depth of 30% of the total thickness of the film.
14 . The method of claim 10 , wherein after fluoro-annealing, the film has a fluorine atomic % of at least 30 at a depth of 30% of the total thickness of the film.
15 . The method of claim 10 , wherein after fluoro-annealing, the film has a fluorine atomic % of at least 20 at a depth of 50% of the total thickness of the film.
16 . The method of claim 10 , wherein after fluoro-annealing, the film has a fluorine atomic % of at least 30 at a depth of 50% of the total thickness of the film.
17 . The method of claim 10 , wherein the fluoro-annealing is performed at a temperature of about 300° C. to about 650° C. in fluorine containing atmosphere.
18 . The method of claim 10 , wherein the substrate is alumina.
19 . The method of claim 10 , wherein the substrate is silicon.
20 . An article made according to the process of claim 10 .