Transistor substrate and manufacturing method
According to one embodiment, a transistor substrate includes a substrate, a light source and a sensor element. The light source is mounted on the substrate. The sensor element is mounted on the substrate. The sensor element includes a pixel electrode, a switching element, a common electrode and an organic photo detector layer. The switching element is electrically connected to the pixel electrode. The common electrode is opposed to the pixel electrode. The organic photo detector layer is provided between the pixel electrode and the common electrode. The light source is provided in a same layer as the organic photo detector layer.
1. A transistor substrate comprising:
a substrate;
a light source mounted on the substrate; and
a sensor element mounted on the substrate,
the sensor element including a pixel electrode, a switching element electrically connected to the pixel electrode, a common electrode opposed to the pixel electrode, and an organic photo detector layer provided between the pixel electrode and the common electrode,
the light source including a micro LED which a lower surface of the micro LED is in contact with a connection conductive member, and a upper surface of the micro LED is in contact with the common electrode,
the micro LED surrounded by a black material provided in a same layer as the micro LED, and
the connection conductive member connected to a power line via a lower electrode in the same layer as the pixel electrode.
2. The transistor substrate of claim 1 , wherein
the switching element is electrically connected to a scanning line extending in a first direction and a signal line extending in a second direction intersecting the first direction, and
the light source and the sensor element are arranged in pixel regions partitioned by the scanning line and the signal line.
3. The transistor substrate of claim 2 ,
wherein the power line is electrically connected to the common electrode and provided in each of the pixel regions.
4. The transistor substrate of claim 1 ,
wherein
the power line has a first line width in a region overlapped on the lower electrode in planar view and a second line width thinner than the first line width in a region which is not overlapped on the lower electrode in planar view.
5. The transistor substrate of claim 1 , wherein
when the pixel electrode functions as a cathode and the common electrode functions as an anode in the sensor element, the organic photo detector layer has a stacked structure in which an electron-transport layer, an active layer, and a hole-transport layer are stacked in order.
6. The transistor substrate of claim 1 , wherein
when the pixel electrode functions as an anode and the common electrode functions as a cathode in the sensor element, the organic photo detector layer has a stacked structure in which a hole-transport layer, an active layer, and an electron-transport layer are stacked in order.