Sensor device and semiconductor device
A flexible semiconductor device including a light-emitting element and a sensor element is provided. The semiconductor device includes a sensor device, a processor, and a communication device. The sensor device includes a first pixel and a second pixel formed over a flexible substrate. The first pixel includes a light-emitting element and a first transistor. The second pixel includes a sensor element having a photoelectric conversion function and a second transistor. Light emitted from the light-emitting element has a peak wavelength. A range of wavelength sensed by the sensor element includes the peak wavelength. A semiconductor layer of the first transistor and a semiconductor layer of the second transistor include the same element. A pixel electrode of the light-emitting element has a function of being electrically connected to the first transistor and a function of blocking diffusion light to the sensor element.
1. A semiconductor device comprising:
a sensor device;
a processor; and
a communication device,
wherein the sensor device comprises a first pixel and a second pixel formed over a substrate,
the first pixel comprising:
a light-emitting element; and
a first transistor,
the second pixel comprising:
a sensor element having a photoelectric conversion function; and
a second transistor,
wherein a first insulating layer is over the first transistor,
wherein a second insulating layer is over the first insulating layer,
wherein light emitted from the light-emitting element has a peak wavelength,
wherein a range of wavelength sensed by the sensor element comprises the peak wavelength,
wherein the first transistor and the second transistor comprise the same element in their semiconductor layers,
wherein a pixel electrode included in the light-emitting element is configured to be electrically connected to the first transistor and to block diffusion light to the sensor element,
wherein the pixel electrode included in the light-emitting element comprises a region in contact with a top surface of the first insulating layer, and
wherein an end portion of the pixel electrode included in the light-emitting element comprises a region in contact with a top surface of the second insulating layer.
2. The semiconductor device according to claim 1 , wherein the second insulating layer comprises a region between the first pixel and the second pixel.
3. The semiconductor device according to claim 1 ,
wherein light sensed by the sensor element is subjected to arithmetic operation in the processor, and
wherein the communication device transmits a result of the arithmetic operation.
4. The semiconductor device according to claim 1 , wherein the sensor device is configured to sense the amount of glucose in blood.
5. A sensor device comprising a first pixel and a second pixel formed over a substrate,
the first pixel comprising:
a light-emitting element; and
a first transistor,
the second pixel comprising:
a sensor element having a photoelectric conversion function; and
a second transistor,
wherein a first insulating layer is over the first transistor,
wherein a second insulating layer is over the first insulating layer,
wherein light emitted from the light-emitting element has a peak wavelength,
wherein a range of wavelength sensed by the sensor element comprises the peak wavelength,
wherein the first transistor and the second transistor comprise the same element in their semiconductor layers,
wherein a pixel electrode included in the light-emitting element is configured to be electrically connected to the first transistor and to block diffusion light to the sensor element,
wherein the pixel electrode included in the light-emitting element comprises a region in contact with a top surface of the first insulating layer, and
wherein an end portion of the pixel electrode included in the light-emitting element comprises a region in contact with a top surface of the second insulating layer.
6. The sensor device according to claim 5 , wherein the substrate is flexible.
7. The sensor device according to claim 5 , wherein the peak wavelength is greater than or equal to 700 nm and less than or equal to 9000 nm.
8. The sensor device according to claim 5 ,
wherein the light-emitting element comprises a first organic compound and a common layer, and
wherein the sensor element comprises a second organic compound and the common layer.
9. The sensor device according to claim 5 , wherein a region comprising no conductive layer is provided between the first pixel and the second pixel.
10. The sensor device according to claim 5 , wherein the first transistor and the second transistor each comprise a metal oxide in the semiconductor layer.
11. The sensor device according to claim 10 , wherein the first transistor or the second transistor comprises a back gate.
12. The sensor device according to claim 5 , wherein the second insulating layer comprises a region between the first pixel and the second pixel.
13. The sensor device according to claim 5 , wherein the sensor device is configured to sense the amount of glucose in blood.