Granted Patent B2

US 12,212,306 · App. 17/542,295 · Granted Jan 28, 2025

Inventors: Chris O'Brien (San Diego, CA); Andrew Kay (Provo, UT); Albert Cardona (Santa Barbara, CA); Ventsislav Yantchev (Sofia, BG); Patrick Turner (San Bruno, CA); Robert B. Hammond (Santa Barbara, CA); Dylan Kelly (San Diego, CA)

Assignee: Murata Manufacturing Co., Ltd.

H03H9/568H03H3/02H03H3/04H03H9/02015H03H9/02157H03H9/02228H03H9/174H03H9/205H03H9/54H03H9/564H03H9/566

Abstract

Claims (21)

1. A method of fabricating a filter device, comprising:

attaching a back surface of a piezoelectric plate having a first thickness to a substrate;

selectively etching, by inductively coupled plasma (ICP) reactive ion etching (RIE) through a chrome mask, a front surface of the piezoelectric plate to thin a portion of the piezoelectric plate from the first thickness to a second thickness less than the first thickness;

forming cavities in the substrate such that portions of the piezoelectric plate form a plurality of diaphragms spanning respective cavities; and

forming a conductor pattern on the front surface of the piezoelectric plate, the conductor pattern comprising

a first interdigital transducer (IDT) with interleaved fingers on a first diaphragm having the first thickness, and

a second IDT with interleaved fingers on a second diaphragm having the second thickness.

2. The method of claim 1 , wherein the first IDT is a part of a shunt resonator and the second IDT is a part of a series resonator in a ladder filter circuit.

3. The method of claim 2 , wherein the conductor pattern further comprises:

IDTs of one or more additional shunt resonators and one or more additional series resonators, wherein

interleaved fingers of the IDTs of all of the shunt resonators are on respective diaphragms having the first thickness, and

interleaved fingers of the IDTs of all of the series resonators are on respective diaphragms having the second thickness.

4. The method of claim 1 , wherein the ICP RIE uses Argon and Sulfur Hexaflouride as an etchant.

5. The method of claim 4 , wherein flow rates for the Argon and Sulfur Hexaflouride are in a 4:1 ratio.

6. The method of claim 1 , wherein the conductor pattern further comprises:

one or more additional IDTs with interleaved fingers on respective diaphragms having one of the first thickness and the second thickness.

7. The method of claim 1 , wherein the piezoelectric plate and all of the IDTs are configured such that a respective radio frequency signal applied to the first IDT and the second IDT excites a respective shear acoustic mode within the respective diaphragm.

8. The method of claim 1 , wherein the piezoelectric plate is one of lithium niobate and lithium tantalate.

9. The method of claim 1 , wherein:

the second thickness is greater than or equal to 200 nm, and

the first thickness less than or equal to 1000 nm.

Assignments (2)

Continuity (13)

References Cited (290)