BEOL interconnect subtractive etch super via
Semiconductor devices including a super via connection between levels are provided. The semiconductor device can include a first interlevel dielectric layer, a back-end-of-line (BEOL) interconnect structure disposed in the first interlevel dielectric layer, a second interlevel dielectric layer disposed on a first portion of the first interlevel dielectric layer, a third interlevel dielectric layer disposed on the second interlevel dielectric layer, and a super via disposed on a second portion of the first interlevel dielectric layer, wherein a first end of the super via is connected to the BEOL interconnect structures and wherein a second end of the super via opposite the first end of the super via is a distance from the first interlevel dielectric layer larger than a height distance of the second interlevel dielectric layer.
1 . A semiconductor device including a super via connection between levels, comprising:
a first interlevel dielectric layer;
a back-end-of-line (BEOL) interconnect structure disposed in the first interlevel dielectric layer;
a second interlevel dielectric layer disposed on a first portion of the first interlevel dielectric layer;
a third interlevel dielectric layer disposed on the second interlevel dielectric layer; and
a super via disposed on a second portion of the first interlevel dielectric layer and in an interlayer dielectric via layer, wherein the super via is spaced apart from the second interlevel dielectric layer and the third interlevel dielectric layer and a first end of the super via is connected to the BEOL interconnect structures and wherein a second end of the super via opposite the first end of the super via is a distance from the first interlevel dielectric layer larger than a height distance of the second interlevel dielectric layer, and wherein the interlayer dielectric via layer is present at least along a sidewall of the second interlevel dielectric layer and the third interlevel dielectric layer.
2 . The device of claim 1 , further comprising a conductive line disposed on the third interlevel dielectric layer, the conductive line comprising a line first end and a line second end the line second end opposite the line first end, wherein the line first end of the conductive line is nearer the third interlevel dielectric layer than the line second end of the line.
3 . The device of claim 2 , further comprising a protective layer disposed along the second end of the super via and the second end of the conductive line.
4 . The device of claim 2 , wherein the second end of the super via is coplanar with the second end of the conductive line.
5 . The device of claim 1 , wherein the super via is pyramidal in shape having a first width at the first end and a second width at the second end, wherein the first width is greater than the second width.
6 . The device of claim 1 , wherein the interlayer dielectric via layer extends above, and onto, a topmost surface of the third interlevel dielectric layer.
7 . The device of claim 1 , wherein the interlayer dielectric via layer has a topmost surface that is coplanar with a topmost surface of the third interlevel dielectric layer.
8 . The device of claim 1 , wherein the interlayer dielectric via layer has a bottommost surface that is in direct physical contact with a topmost surface of the first interlevel dielectric layer.
9 . The device of claim 1 , wherein the second interlevel dielectric layer and the third interlevel dielectric layer are devoid of the super via passing through the any portion thereof.
10 . The device of claim 1 , wherein the interlayer dielectric via layer is a single layered dielectric material.