Multi-level programming of phase change memory device
A phase change memory includes a phase change structure. There is a heater coupled to a first surface of the phase change structure. A first electrode is coupled to a second surface of the phase change structure. A second electrode coupled to a second surface of the heater. A third electrode is connected to a first lateral end of the phase change structure and a fourth electrode connected to a second lateral end of the phase change structure.
1. A phase change memory cell, comprising:
a phase change structure;
a heater coupled to a first surface of the phase change structure;
a first electrode coupled to a second surface of the phase change structure;
a second electrode coupled to a second surface of the heater;
a third electrode connected to a first lateral end of the phase change structure; and
a fourth electrode connected to a second lateral end of the phase change structure,
wherein the phase change structure comprises a stack of alternating layers of a resistive liner (RL) layer and a phase change memory (PCM) layer and a thickness of at least one PCM layer in the stack of alternating layers of the RL layer and the PCM layer is different from thicknesses of other PCM layers in the stack of alternating layers.
2. The phase change memory cell of claim 1 , wherein a thickness of at least one RL layer in the stack of alternating layers of the RL layer and the PCM layer is different from thicknesses of other RL layers in the stack of alternating layers.
3. The phase change memory cell of claim 1 , wherein the phase change structure comprises a uniform phase change material.
4. The phase change memory cell of claim 1 , wherein the phase change structure has a trapezoidal-prism shape.
5. The phase change memory cell of claim 1 , wherein the phase change structure has a first portion that is trapezoidal-prism shaped and a second abutting portion that is rounded or squared off.
6. The phase change memory cell of claim 1 , wherein the first and second electrodes are configured to program the phase change structure.
7. The phase change memory cell of claim 1 , wherein the third and fourth electrodes are configured to read a state of the phase change structure.
8. The phase change memory cell of claim 1 , further comprising:
a substrate below the first electrode;
a first dielectric layer on top of the substrate and on a left and a right side of the first electrode; and
a second dielectric layer on top of the phase change structure and on a left and a right side of the heater.
9. The phase change memory cell of claim 8 , wherein the phase change structure tapers wider towards the substrate.
10. The phase change memory cell of claim 1 , further comprising:
a substrate below the second electrode;
a first dielectric layer on top of the substrate and on a left and a right side of the second electrode; and
a silicon nitride (SiN) layer on top of the first dielectric layer and the second electrode and on a left and a right side of the heater.
11. The phase change memory cell of claim 10 , wherein the phase change structure tapers narrower towards the substrate.
12. The phase change memory cell of claim 1 , wherein the heater has a ring shape.
13. The phase change memory cell of claim 1 , wherein the heater comprises multiple layers.
14. A method of fabricating a phase change memory cell, comprising:
providing a bottom electrode;
creating a phase change structure above and coupled to the bottom electrode at a bottom surface of the phase change structure;
forming a left electrode and a right electrode on a left vertical side surface and a right vertical side surface of the phase change structure, respectively;
forming a heater on top of and coupled to a top surface of the phase change structure; and
providing a top electrode on top of and coupled to a top surface of the heater,
wherein the phase change structure comprises a stack of alternating layers of a resistive liner (RL) layer and a phase change memory (PCM) layer and a thickness of at least one PCM layer in the stack of alternating layers of the RL layer and the PCM layer is different from thicknesses of other PCM layers in the stack of alternating layers.
15. The method of claim 14 , wherein the bottom electrode is on top of a substrate and the phase change structure has a trapezoidal-prism shape that tapers wider towards the substrate.
16. The method of claim 14 , further comprising:
providing a first dielectric layer on top of a substrate and on a left and a right side of a first electrode; and
creating a second dielectric layer on top of the phase change structure and a left and a right side of the heater.
17. A phase change memory cell, comprising:
a phase change structure;
a heater coupled to a first surface of the phase change structure;
a first electrode coupled to a second surface of the phase change structure;
a second electrode coupled to a second surface of the heater;
a third electrode connected to a first lateral end of the phase change structure; and
a fourth electrode connected to a second lateral end of the phase change structure,
wherein the phase change structure comprises a stack of alternating layers of a resistive liner (RL) layer and a phase change memory (PCM) layer and a thickness of at least one RL layer in the stack of alternating layers of the RL layer and the PCM layer is different from thicknesses of other RL layers in the stack of alternating layers.
18. The phase change memory cell of claim 17 , wherein a thickness of at least one PCM layer in the stack of alternating layers of the RL layer and the PCM layer is different from thicknesses of other PCM layers in the stack of alternating layers.
19. The phase change memory cell of claim 17 , wherein the phase change structure comprises a uniform phase change material.
20. The phase change memory cell of claim 17 , wherein the phase change structure has a trapezoidal-prism shape.